Semiconductors are amongst the most efficient active laser media as they yield extreme wall-plug efficiencies. Their broad gain bandwidth also promise short-pulse operation. Yet, intrinsic charge-carrier relaxation dynamics limit the feasible repetition rates beyond constraints of cavity design and heat removal. In lieu of studying an operation device we monitor the population dynamics, i.e., the initial buildup of gain after optical excitation as well as its recovery after a stimulated emission process using multiple pump-probe spectroscopy. The first optical pulse injects hot charge carriers that eventually build up spectral gain in the sample. The energies are chosen such to mimic typical electrical injection surplus energies. Subsequently, a second laser pulse tuned to the broad spectral region in which gain is observed is used to stimulate emission and thus eliminate the gain. Analysis of the absorption spectra after stimulated emission reveals gain recovery times in the picosecond regime.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.