Prof. Jean-Paul Salvestrini Profile

Prof. Jean-Paul Salvestrini

at Georgia Tech Lorraine

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Author

Publications (7)

SPIE Journal Paper | 11 January 2024 Open Access

Analysis and simulation of the in-situ time-resolved reflectivity recorded during the growth of GaN on GaAs (110) substrate

Safa Othmani, Imen Daldoul, Noureddine Chaaben, Jean Paul Salvestrini

OE, Vol. 63, Issue 01, 014104, (January 2024) https://doi.org/10.1117/12.10.1117/1.OE.63.1.014104

KEYWORDS: Gallium nitride, Reflectivity, Gallium arsenide, Gallium, Surface roughness, Diffusion, Temperature metrology, Optical engineering, Refractive index, Atomic force microscopy

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Proceedings Article | 21 March 2023 Presentation

Novel approaches of epitaxial growth and layer transfer techniques using 2D h-BN for flexible GaN-based LEDs and Micro-LEDs

Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, Adama Mballo, Rajat Gujrat, Ashutosh Srivastava, Jean-Paul Salvestrini, Paul Voss, Gilles Patriarche

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2654225

KEYWORDS: Light emitting diodes, Heterojunctions, Silicon, Semiconductors, Quartz, Metalorganic chemical vapor deposition, Gallium nitride, Epitaxy, Chemical vapor deposition, Boron

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Proceedings Article | 16 March 2023 Presentation + Paper

Toward both p- and n-doping of hexagonal boron nitride using sub-bandgap illumination

A. Perepeliuc, R. Gujrati, A. Srivastava, P. Vuong, V. Ottapilakkal, P. Voss, S. Sundaram, J. Salvestrini, A. Ougazzaden

Proceedings Volume 12422, 124220H (2023) https://doi.org/10.1117/12.2662309

KEYWORDS: Light sources and illumination, Boron nitride, Electrical conductivity, Semiconductors, Photocurrent, Ultraviolet radiation, Laser irradiation

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SPIE Journal Paper | 22 October 2022 Open Access

Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

Mohamed Bouzidi, Wafa Malek, Noureddine Chaaben, Abdullah Alshammari, Ziaul Raza Khan, Mohamed Gandouzi, Monsour Mohamed, Ahmed Rebey, Abdullah Alatawi, Abdullah Alhassan, Abdullah Alharbi, Jean Paul Salvestrini, Mohammad Khaled Shakfa

OE, Vol. 61, Issue 10, 105106, (October 2022) https://doi.org/10.1117/12.10.1117/1.OE.61.10.105106

KEYWORDS: Annealing, Heterojunctions, Aluminum, Carrier dynamics, Gallium nitride, Gallium, Scanning electron microscopy, Scattering, Temperature metrology, Phonons

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Proceedings Article | 5 March 2021 Presentation

Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN

Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Adama Mballo, Gilles Patriarche, Ashutosh Srivastava, Ali Ahaitouf, Simon Gautier, Tarik Moudakir, Paul Voss, Jean Paul Salvestrini

Proceedings Volume 11686, 116861G (2021) https://doi.org/10.1117/12.2584985

KEYWORDS: Epitaxy, Optoelectronic devices, Solar cells, Sensors, Photodetectors, Light emitting diodes, Heterojunctions, Field effect transistors

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Showing 5 of 7 publications

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