Dr. Jean Massin Profile

Dr. Jean Massin

at STMicroelectronics

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Author

Publications (9)

Proceedings Article | 29 October 2014 Paper

Impact of reticle writing errors on the on-product overlay performance

Richard van Haren, Hakki Ergun Cekli, Xing Lan Liu, Jan Beltman, Anne Pastol, Jean Massin, Emilie Dupre La Tour, Maxime Gatefait, Frank Sundermann

Proceedings Volume 9235, 923522 (2014) https://doi.org/10.1117/12.2069315

KEYWORDS: Reticles, Semiconducting wafers, Scanners, Photomasks, Overlay metrology, Optical alignment, Metals, Image registration, Etching, Metrology

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The on-product overlay specification and Advanced Process Control (APC) are getting extremely challenging particularly after the introduction of multi-patterning applications like Litho-Etch-Litho-Etch (LELE). While the Reticle Writing Error (RWE) contribution could be marginalized for quite some time in the layer-to-layer overlay budget, it will become one of the dominating overlay contributors when the intra-layer overlay budget is considered. While most of the overlay contributors like wafer processing, scanner status, reticle transmission, dose, illumination conditions drop out of the intra-layer overlay budget, this is certainly not the case for reticle to reticle writing differences. In this work, we have studied the impact of the RWE on the on-product overlay performance. We show that the RWE can be characterized by an off-line mask registration tool and the modelled results can be sent as feed-forward corrections to the ASML TWINSCAN^TM. By doing so, the overlay control complexity (e.g. send-ahead wafers, APC settling time) can be reduced significantly. Off-line characterization enables that all reticles virtually become equal after correction (at least to the level of correction capability of the scanner). This means that all higher order RWE contributions (currently up to a third order polynomial) can be removed from the fingerprint. We show that out of 50 production reticles (FEOL, 28-nm technology), 30% can be improved on residual level when non-linear feed-forward corrections are considered as well. The additional benefit of feeding forward linear corrections to the scanner is even higher: it is anticipated that a large portion of the APC variation might find its origin in the RWE contribution. In order to send feed-forward corrections to the scanner, we obviously rely on the quality of the off-line RWE measurements. These measurements are usually provided by a registration tool at the mask shop. To secure the quality, an independent experimental verification test was developed to check if off-line RWE measurements can be used as feed-forward corrections to the scanner. The test has been executed on an ASML NXT: 1950i scanner and was designed such to isolate the reticle writing error contribution. The match between the off-line measurements and the experiment is striking.

Proceedings Article | 5 April 2012 Paper

Lithography process control using in-line metrology

Nicolas Spaziani, René-Louis Inglebert, Jean Massin

Proceedings Volume 8324, 83241L (2012) https://doi.org/10.1117/12.916372

KEYWORDS: Critical dimension metrology, Lithography, Photoresist materials, Metrology, Semiconducting wafers, Reticles, Photomasks, Control systems, Scatterometry, Quartz

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Proceedings Article | 5 April 2012 Paper

Integration and automation of DoseMapper in a logic fab APC system: application for 45/40/28nm node

Bertrand Le Gratiet, Christophe Salagnon, Jean de Caunes, Marc Mikolajczak, Vincent Morin, Nicolas Chojnowski, Frank Sundermann, Jean Massin, Alice Pelletier, Joel Metz, Yoann Blancquaert, Regis Bouyssou, Arthur Pelissier, Olivier Belmont, Anne Strapazzon, Anna Phillips, Thierry Devoivre, Emilie Bernard, Estelle Batail, Lionel Thevenon, Benedicte Bry, Fabrice Bernard-Granger, Ahmed Oumina, Marie-Pierre Baron, Didier Gueze

Proceedings Volume 8324, 83241Y (2012) https://doi.org/10.1117/12.911882

KEYWORDS: Etching, Photomasks, Logic, Databases, Control systems, Scanners, Metrology, Semiconducting wafers, Lithography, Process control

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Proceedings Article | 23 March 2011 Paper

Lithography process control using focus and dose optimisation technique

Nicolas Spaziani, René-Louis Inglebert, Jean Massin

Proceedings Volume 7973, 79732Z (2011) https://doi.org/10.1117/12.879074

KEYWORDS: Critical dimension metrology, Photoresist materials, Scatterometry, Semiconducting wafers, Scatter measurement, Control systems, Lithography, Deconvolution, Process control, Finite element methods

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Proceedings Article | 2 April 2010 Paper

Improved CD control for 45-40 nm CMOS logic patterning: anticipation for 32-28 nm

Bertrand Le Gratiet, Frank Sundermann, Jean Massin, Marianne Decaux, Nicolas Thivolle, Fabrice Baron, Alain Ostrovsky, Cedric Monget, Jean Damien Chapon, Yoann Blancquaert, Karen Dabertrand, Lionel Thevenon, Benedicte Bry, Nicolas Cluet, Bertrand Borot, Raphael Bingert, Thierry Devoivre, Pascal Gourard, Laurène Babaud, Ute Buttgereit, Robert Birkner, Mark Joyner, Erez Graitzer, Avi Cohen

Proceedings Volume 7638, 76380A (2010) https://doi.org/10.1117/12.845987

KEYWORDS: Photomasks, Critical dimension metrology, Metrology, Etching, Scanners, Semiconducting wafers, Airborne remote sensing, Logic, Optical lithography, Process control

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Proceedings Article | 24 March 2009 Paper

Intrafield process control for 45 nm CMOS logic patterning

Bertrand Le Gratiet, Jean Massin, Alain Ostrovski, Cedric Monget, Marianne Decaux, Nicolas Thivolle, Romuald Faure, Fabrice Baron, Jean-Damien Chapon, Karen Dabertrand, Frank Sundermann, Pascal Gouraud, Laurène Babaud, Lionel Thevenon, Nicolas Cluet, Boris VandeWalle

Proceedings Volume 7272, 72722P (2009) https://doi.org/10.1117/12.812571

KEYWORDS: Reticles, Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, Metrology, Optical lithography, Process control, Scatterometry, Logic

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Proceedings Article | 1 April 2008 Paper

Integration issues in step and repeat UV nanoimprint lithography

C. Charpin-Nicolle, M. Irmscher, M. Pritschow, B. Vratzov, H. van Vossen, J. Chiaroni, J. Massin, P. Gubbini

Proceedings Volume 6921, 69212I (2008) https://doi.org/10.1117/12.790732

KEYWORDS: Etching, Nanoimprint lithography, Plasma, Semiconducting wafers, Silicon, Chlorine, Scanning electron microscopy, Chromium, Ultraviolet radiation, Optical alignment

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Proceedings Article | 22 March 2008 Paper

Process control for 45 nm CMOS logic gate patterning

Bertrand Le Gratiet, Pascal Gouraud, Enrique Aparicio, Laurene Babaud, Karen Dabertrand, Mathieu Touchet, Stephanie Kremer, Catherine Chaton, Franck Foussadier, Frank Sundermann, Jean Massin, Jean-Damien Chapon, Maxime Gatefait, Blandine Minghetti, Jean de-Caunes, Daniel Boutin

Proceedings Volume 6922, 69220Z (2008) https://doi.org/10.1117/12.776889

KEYWORDS: Semiconducting wafers, Etching, Critical dimension metrology, Optical lithography, Scatterometry, Reticles, Scanners, Photomasks, Process control, Immersion lithography

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Proceedings Article | 7 March 2008 Paper

Improving lithography intra wafer CD for C045 implant layers using STI thickness feed forward?

Jean Massin, Bastien Orlando, Maxime Gatefait, Jean-Damien Chapon, Bertrand Le-Gratiet, Blandine Minghetti, Pierre-Jérôme Goirand

Proceedings Volume 6924, 69244M (2008) https://doi.org/10.1117/12.775708

KEYWORDS: Oxides, Critical dimension metrology, Metrology, Chemical mechanical planarization, Logic, Semiconducting wafers, Etching, Optical lithography, Lithography, Scanners

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Showing 5 of 9 publications

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