Recently published experimental results indicate that current resists seem to be very hard to meet the International
Roadmap for Semiconductors (ITRS) goals for Resolution, Line Width Roughness (LWR) and Sensitivity (RLS)
simultaneously. This RLS trade-off has also been demonstrated through modeling work. RLS goals may not be possible
for lithographers to achieve all three simultaneously by applying current standard chemically amplified resists and
processes. In this paper, we have synthesized the various PAG(photo-acid generator) bound polymers for different anion
size and other molecular weight (Mw). In order to reach the EUV resist targets, we investigate the effect of diffusion
length on energy latitude(EL), resolution and LWR under DUV light and EUV exposure. We will also use DUV light to
explore the impact of DUV contrast on the RLS relationships in EUV performances. We have measured Eth and LWR in
DUV patterning process and correlated them with those obtained in EUV process. By using DUV light source we have
setup EUV resist pre-screening and improving method.
To obtain high resolution and sensitivity and low line width roughness (LWR), the resist film homogeneity is thought to
be the key requirement of extreme ultraviolet lithography (EUVL) resist materials. We have synthesized of a new class
of chemically amplified molecular glass resists containing rigid triphenolic cores which are protected by flexible side
chains. We analyzed the electron density distribution of resist films (70 nm) by using X-ray reflectivity (XRR). The
effects of protection ratio, high and low activation protecting groups, chain lengths have been tested using selected
molecular resist. We discuss the effects of the chemical structures of new molecular resists on EUV lithographic
performances.
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