Optical frequency combs based on broadband-gain bulk lasers, due to the low intrinsic linewidth and sub-GHz repetition rates, have gained tremendous interest for applications such as high-resolution spectroscopy, dual-comb spectroscopy or LIDAR. However, susceptibility to mechanical and acoustic perturbations, the complexity of optical pumping and the larger physical size of these lasers has motivated research toward chip-based integrated extended cavity diode lasers with low-loss Si3N4 waveguide feedback circuits for low repetition rates. In diode lasers, mode-locking via saturable absorbers is generally used for generating frequency combs, however, the short upper-state carrier lifetime results in repetition rates of at least a few GHz. Here, we demonstrate absorber-free, passive mode-locking as well as hybrid mode-locking at sub-GHz repetition rates using a long Si3N4 feedback circuit with three highly frequency-selective microring resonators for extending the cavity roundtrip length to more than 0.6 m. This enables frequency-domain mode-locking in the form of a continuous wave, with a line spacing of around 500 MHz. Hybrid mode-locking, in addition to passive mode-locking, is demonstrated by adding a weak AC drive current with a frequency close to 500 MHz. This stabilizes the repetition rate and reduces the Gaussian component of the laser’s RF linewidth attaining a negligible Lorentzian component. Our numerical simulations predict that further lowering of the repetition rate and line spacings might be achievable with further cavity length extension.
We demonstrate the first on-chip laser frequency comb based on hybrid integration with low-loss Si3N4 waveguide circuits. The laser comprises an InP diode amplifier of which a small fraction is reverse biased for passive locking, while a Si3N4 feedback waveguide extends the optical cavity to a roundtrip length of 15 cm. The generated comb densely covers a 25 nm broad spectrum, at a 3 dB level, with more than 1600 comb-lines at 2 GHz spacing. With such properties, hybrid integrated diode lasers show great promise for widespread use in applications such as integrated microwave photonics or metrology.
Hybrid integration of semiconductor optical amplifiers with frequency-selective feedback circuits, implemented using low-loss Si3N4 waveguides, enables robust chip-sized lasers with outstanding properties. Deploying ring resonators as a tunable feedback filter provides single-mode operation over a wide wavelength range. Moreover, these rings resonantly enhance the cavity length, which results in ultra-narrow intrinsic linewidth, as low as 40 Hz.
Here, we present an overview on state-of-the-art developments regarding these lasers. We compare linewidth and tuning results for different feedback circuit configurations. Finally, we report on the first demonstration of a hybrid-integrated semiconductor laser that operates in the visible wavelength range.
We present for the first time second harmonic generation in amorphous stoichiometric Si3N4 waveguides grown via low pressure chemical vapor deposition. An effective second-order susceptibility (χ (2)) is established via the coherent photogalvanic effect. A waveguide was designed to phase match a horizontally (parallel to the waveguide width) polarized hybrid EH00 mode at 1064 nm with the higher-order hybrid transverse EH02 mode at 532 nm. A mode-locked laser delivering 6.2-ps pulses at 1064 nm with a repetition rate of 20 MHz was used as pump. When pumped with a constant average power, it was found that the photoinduced χ (2) is established over a time of the order of 1000 s in as-manufactured waveguides, during which the second harmonic signal grows from below noise to a saturation value. The life-time of the photoinduced χ (2) is at least a week. In steady state, we obtain a maximum conversion efficiency close to 0.4% for an average pump power of 13 mW inside the waveguide. The effective second-order susceptibility is found to be 8.6 pm/V.
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