Interfacial exciton-polaron quenching (EPQ) in organic light-emitting diodes (OLED) refers to the remote and direct energy transfer from the excitons in the emission layer (EML) to the charges accumulated at the interface of the adjacent charge transport layers (CTLs). Here, interfacial EPQ is investigated by using a bilayer hole-only device (HOD), where an ultra-thin dopant layer is selectively introduced near the interface. At the heterointerface, positive-charge accumulation is induced due to the energy difference between distinct organic layers, while excitons are optically pumped in the dopants exclusively. The interfacial EPQ is characterized by measuring a shift in the photoluminescent intensity of the dopants. Such interfacial EPQ indeed depends on the interfacial energy offset and the distance between charges and excitons, and universally occurs regardless of the emission mechanism of OLEDs. We propose the device architecture to potentially reduce interfacial EPQ for achieving high-performance OLEDs.
We present a comprehensive model to analyze, quantitatively, and predict the process of degradation of OLEDs considering polaron, exciton, exciton–polaron interactions, exciton–exciton interactions and a newly proposed impurity effect. The loss of efficiency during degradation is presented as a function of quencher density. The density and generation mechanisms of quenchers are extracted using a voltage rise model. The comprehensive model is applied to stable blue phosphorescent OLEDs, and the results show that the model describes the voltage rise and external quantum efficiency loss very well, and that the quenchers in emitting layer are mainly generated by polaron-induced degradation of dopants. Quencher formation was confirmed from a mass spectrometry. The polaron density per dopant molecule is reduced by controlling the emitter doping ratio, resulting in the highest reported LT50 of 431 hours at an initial brightness of 500 cd/m2 with CIEy<0.25 and high EQE>18%.
High efficiency near-infrared (NIR) absorbing solar cells based on lead phthalocyanine (PbPc) are reported using copper
iodide (CuI) as a templating layer to control the crystal structure of PbPc. Devices with CuI inserted between the ITO
and PbPc layers exhibit a two times enhancement of the JSC compared to the case in the absence of the CuI layer. This is
due to the increase of crystallinity in the molecules grown on the CuI templating layer, which is investigated via an x-ray
diffraction study. Moreover, fill factor is also enhanced to 0.63 from 0.57 due to low series resistance although the
additional CuI layer is inserted between the ITO and the PbPc layer. As a result, the corrected power conversion
efficiency of 2.5% was obtained, which is the highest one reported up to now among the PbPc based solar cells.
ZnPc and CuPc molecules stacked similar way in the film, but showed different growth modes in thermal evaporation.
The distribution of CuPc crystals did not change by the film thickness, whereas the distribution of ZnPc became random
as the increase of the film thickness. The disc type nanograins of CuPc were quite regularly distributed at the initial
growth regime and the regular distribution of nanograins was kept during the film growth. On the other hand, ZnPc
consisted in ellipsoid shaped nanograins and the distribution of nanograins was not regular in the initial growth regime.
The irregular distribution of nanograins changed to the regular mode at the later growth regime by showing structure
factor in GISAXS measurement. The different initial nanograin distribution in ZnPc and CuPc was related to the
different nanostructure in the mixed layer with C60 to form the bulk heterojunction.
We demonstrated that an organic p–n junction was successfully adapted to inverted organic light emitting diodes
(IOLEDs) as an electron injection layer (EIL). The organic p–n junction composed of a ReO3 doped copper
phthalocyanine (CuPc)/Rb2CO3 doped 4,7-diphenyl-1,10-phenanthroline (Bphen) layer showed very efficient
charge generation under a reverse bias reaching to 100 mA/cm2 at 0.3 V and efficient electron injection from
indium tin oxide (ITO) when adopted in IOLEDs. Moreover, the organic p–n junction resulted in the same
current density–voltage–luminance characteristics independent of the work function of the cathode, which is a
valuable advantage for flexible displays.
We reported a couple of methods to improve electron injection from the ITO electrode, thereby to fabricate efficient
inverted bottom emission organic light emitting diodes (IBOLEDs). The first method is to use an n-doped electron
transporting layer (ETL) as the electron injection layer. Electron only device characteristics and UPS measurements
confirmed that B3PYMPM homo-junction has the lowest injection barrier at the interface among three different ETLs,
resulting in the highest maximum EQE of 19.8% at low voltage in IBOLEDs. The energy barrier between n-ETL and
ETL is one of the most important factors for high performance inverted OLEDs. The second method is to use an organic
p-n junction as an electron injection layer, where the p-n junction generated electrons and holes under reverse bias,
which corresponds to the forward bias in the OLEDs. The organic p-n junction composed of a p-CuPc/n-Bphen layer
shows almost the same electron injection characteristics for the cathodes with different work functions whereas the
injection characteristics of the n-Bphen EIL significantly depend on the work function of the cathode. These facts
indicate that the organic p-n junction can be efficiently applied as an electron injection layer for high performance
flexible organic electronics, regardless of the electrodes.
Real time grazing incidence small angle x-ray scattering (GI-SAXS) and x-ray reflectivity measurements were conducted
in order to investigate the thermal evolution of the nano-grain structure and surface of 5nm thick Copper(II)
Phthalocyanine (CuPc) films. The evolution was strongly influenced by the surface energy of silicon substrate. On the
low surface energy (hydrophobic) Si substrate, CuPc nano-grains are randomly distributed and the crystal size did not
increase in size upon thermal annealing. Thermal annealing induced a more random distribution of nano-grains with an
increase in roughness, and large islands formed by the coalescence of small grains. On the high surface energy
(hydrophilic) Si substrate, CuPc film consisted of disk shaped nano-grains of two different sizes. The larger grains
showed lateral crystal growth and planarization by thermal annealing, while the smaller grains did not increase in size.
Large clusters were observed at high temperature, which were derived by large grains. The different thermal evolution
models of CuPc films based on GI-SAXS analysis are consistent with the different temperature behavior of the hole
mobilities of organic field-effect transistor (OFET) devices fabricated on both surfaces.
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