Mr. Jia-Xin Ding Profile

Jia-Xin Ding

at Luoyang Optoelectro Technology Development Ctr

SPIE Involvement:

Author

Publications (2)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 12 March 2021 Paper

Molecular beam epitaxial InSb infrared photodiode with low dark current

Xubo Zhu, Yanqiu Lyu, Zhenyu Peng, Xiancun Cao, Lixue Zhang, Guansheng Yao, Jiaxin Ding

Proceedings Volume 11763, 117630F (2021) https://doi.org/10.1117/12.2585696

Read Abstract +

The InSb epitaxial layer of p⁺-n-n⁺ structure was grown by Molecular Beam Epitaxy (MBE) on a heavily doped InSb substrate. Photodiodes of InSb were fabricated by standard semiconductor manufacturing process. Measurement and analysis of its electrical properties was carried out. Compared with traditional bulk crystal InSb of p⁺-n structure, we find that, when the external bias voltage is 0.1V, dark current density values of p⁺-n-n⁺ InSb device and InSb bulk material device is 1.1×10^-6 A·cm^-2 and 9.5×10^-5 A·cm^-2 at 77K, respectively. zero-bias-resistance area products is 8.9×10⁴Ω·cm² and 6.2×10³ Ω·cm² at 77K, respectively. Doping concentrations values in the absorption layers are equal to 5.0×10¹⁴ cm^-3 and 1.3×10¹⁶ cm^-3 , respectively. The InSb epitaxial layer of p⁺-n-n⁺ structure which has better crystal quality achieves better performance than bulk crystal InSb when the passivation process is reliable. It provides an important foundation for the fabrication of epitaxial InSb infrared detector.

Proceedings Article | 21 August 2013 Paper

Research on the electrical characteristics of the Pt/CdS Schottky diode

Jia-xin Ding, Xiang-feng Zhang, Guansheng Yao

Proceedings Volume 8908, 890818 (2013) https://doi.org/10.1117/12.2033170

KEYWORDS: Cadmium sulfide, Diodes, Ultraviolet radiation, Ultraviolet detectors, Platinum, Missiles, Infrared detectors, Electrodes, Detector development, Sputter deposition

Read Abstract +

With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years