Viacheslav Artyushenko, Cezar Wojciechowski, Jim Ingram, Vitaly Kononenko, Vladimir Lobachev, Tatjana Sakharova, Jacek Ludczak, Andrzej Grzebieniak, Zdzislaw Wojciechowski
Review of the latest development in production and advanced applications of specialty fibre optics includes specialty silica fibers and IR-fibers drawn from chalcogenide glasses and extruded from crystal solutions of Silver Halides. Transmission range of these 3 types of fibers spans 0.2 to 18μm, while the power of radiation they may deliver varies from microwatts for sensing applications to several kilowatts - when silica fibers are assembled, for example, in high power cables for laser technology applications. Various probes and bundles assembled from specialty fibers are used for remote sensing of IR-emission, temperature, mechanical stress and for process-spectroscopy in very broad range - from 0.2 to 18μm.
Photoconductors based on multi-layer structure consists of homogeneous narrow-gap n-Hg1-xCdxTe absorbing layer (n-absorber) blocked by thin adjacent graded-gap Hg1-xCdxTe layers have been fabricated and examined. A possible giant increase in responsivity of Long-Wave Infrared (LWIR) photoconductor (spectral range from 8 to 14 μm) and Very Long-Wave Infrared (VLWIR) photoconductor (spectral range longer than 14 μm) at 78-100K operating temperature was predicted. Prediction is based on suggestion that interfaces in three-layer sensitive structure grown by MBE in single run and consists of n-absorber and adjacent graded-gap layers of native material and same type of conductivity will be free of both recombination centers and charge states. Theoretical analysis has shown that formation of diffusion barrier within graded-gap layers is occurred during illumination of photoconductor. That diffusion barrier prevents excess holes excited in homogenous absorber layer from moving to surfaces. Therefore excess holes will recombine preferably in active region of photoconductor, thus giving high quantum efficiency and good responsivity. Measurements performed on fabricated photoconductors showed near ideal background limited performance (BLIP) with significantly increased value of peak responsivity. Wide shape of spectral responsivity curves is evidence that surface recombination at interfaces was eliminated.
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