Carrier evolution equation (continuity equation) of semi-conductor plays an essential role in simulation of laser interference and electrical damage induced by laser irradiation on charge coupled device (CCD). Solving the Poisson equation, which is coupled with the carrier evolution equation, is a necessary step to obtain the stable electronic field caused by doped atoms and the dynamic one caused by free carriers. In terms of carrier evolution simulation in high resolution-CCD, it is important to solve the Poisson equation promptly and efficiently. For this purpose, we adopt a boundary element method with convolution core combined with Gauss integral algorithm. In this method, we propose the pixel element model in which fast Fourier transform (FFT) is introduced so that the amount of calculation is greatly decreased compared with the finite difference method. In this approach, it is possible to simulate carrier evolution in high-resolution-CCD even on a common personal computer.
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