Optical and structural properties of InAs/InAsSb type-II superlattices (T2SL) and their feasibility for mid- and longwavelength
infrared (MWIR and LWIR) photodetector applications are investigated. The InAs/InAsSb T2SL structures
with a broad bandgap range covering 4 μm to 12 μm are grown by molecular beam epitaxy and characterized by highresolution
x-ray diffraction and photoluminescence (PL) spectroscopy. All of the samples have excellent structural
properties and strong PL signal intensities of the same order of magnitude, indicating that non-radiative recombination is
not dominant and the material system is promising for high performance MWIR and LWIR detectors and multiband
FPAs.
A pulsed voltage bias method is proposed to eliminate the measurement artifacts of external quantum efficiency
(EQE) of multi-junction solar cells. Under the DC voltage and light biases in the EQE measurements, the output current
and voltage drops on the subcells under the chopped monochromatic light are affected by the low shunt resistances of the
Ge subcells, which cause the EQE measurement artifacts for InGaP/InGaAs/Ge triple junction solar cells. A pulsed
voltage bias superimposed on the DC voltage and light biases is used to properly control the output current and subcell
voltages to eliminate the measurement artifacts. SPICE simulation confirms that the proposed method completely
removes the measurement artifacts.
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