Ms. Jing Xie Profile

Jing Xie

at Shanghai Institute of Technical Physics

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Publications (3)

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Proceedings Article | 12 December 2018 Paper

ESD design of radiation-hardened for UV AlGaN focal plane arrays readout circuit

Jing Xie, Ling Wang, Jiqiang Wang, Ding Ma, Yan Zhang, Xiangyang Li

Proceedings Volume 10846, 108461M (2018) https://doi.org/10.1117/12.2505029

KEYWORDS: Ultraviolet radiation, Silicon, Analog electronics, Signal processing, Radiation effects, Staring arrays, Sensors

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To meet the desire of radiation-hardened Electro-Static Discharge (ESD), a series of ESD protection devices and structures were proposed for ultraviolet (UV) AlGaN focal plane arrays (FPAs) readout circuit in this paper. The whole-chip ESD protection structures for I/O pads and power clamp (PC) pads fabricated in Global Foundries 0.35μm 2P4M mixed signal process are investigated. The structure-level and layout-level radiation hardened technologies are used to solve the problem of ESD current discharge efficiency and radiation hardened. Experimental results were obtained by transmission line pulse (TLP) testing system before and after the radiation hardening, it shows that the proposed ESD protection structures can reach the Human Body Model(HBM) ESD level to more than 4kV, while the total dose of ionizing radiation(TID) was 50krad (Si). Moreover, the whole chip ESD protection network are separated into logic ESD protection modules and analog ESD protection modules respectively to decrease crosstalk effect, and multi power clamp ESD protection devices are placed to improve the ESD current discharge efficiency.

Proceedings Article | 24 October 2017 Paper

Design and implementation of ultraviolet imager for corona discharge detection based on solar-blind AlGaN focal plane arrays

Jiqiang Wang, Xiaojuan Li, Ling Wang, Jing Xie, Yan Zhang, Xiangyang Li

Proceedings Volume 10462, 104624H (2017) https://doi.org/10.1117/12.2285547

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Corona discharges occur in high voltage electrical equipment in case of defects and damage, while ultraviolet(UV) light generated during discharge. High resolution imaging in the solar-blind UV bands has a lot of applications in corona discharge detection. A ultraviolet imager based on 320×256 solar-blind AlGaN focal plane arrays (FPA) was designed that work even in the sunlight, because the Cut-off wavelength of the AlGaN FPA is 280nm. The UV image signal processing system based on FPGA is composed of various function modules include the voltage bias, sequence drive, A/D data acquisition, non-uniformity correction, video transformation. Due to FPGA-based data acquisition and realtime image processing technology, the UV imager can operate at a rate up to 100 frame/s. The results show that the simulation high voltage ultraviolet image can be obtained by the UV imager. The image non-uniformity correction performed is one-points correction method to realize background subtraction. And the images show good uniformity and contrast. The UV image of the alcohol burner flame can be detected by the Ultraviolet Imager. Imaging quality was discussed which can be determined by signal-to-noise ratio (SNR), the integration time, the optics f/number and so on. The best imaging conditions were analyzed and the imaging system was designed and setup. The conclusion is proved that the ultraviolet imager based on solar-blind AlGaN FPA provides a new method for corona discharge detection of high voltage power transmission and distribution system.

Proceedings Article | 24 October 2017 Paper

Design of ultra-low-power readout circuit for UV GaN focal plane array

Xiaojuan Li, Jiqiang Wang, Jing Xie, Ling Wang, Yan Zhang, Xiangyang Li

Proceedings Volume 10462, 104624Z (2017) https://doi.org/10.1117/12.2285685

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A Readout Integrated Circuit (ROIC) for GaN ultraviolet (UV) focal plane array (FPA) working in “solar-blind” band is studied in this paper. It has a format of 320×256 and a pixel pitch of 30μm. This circuit can operate both in integrating-while-reading (IWR) and integrating-then-reading (ITR) mode with the frame rate higher than 100fps. It is common that trade-offs always exist between chip power consumption and performances in integrated circuits design. In order to get high injection efficiency with small area and low power, A novel low-power capacitive-feedback trans-impedance amplifier (CTIA) with snapshot mode is designed for the proposed circuit. The smallest operational current of CTIA is only 10nA for 5V power supply. The total power consumption of ROIC is reduced significantly to 45mW with the ultra-low-power pixel. By adopting the 0.35μm 2P4M mixed signal process, the high-performance CTIA architecture can make two gain selections which charge capacities are 3.4Me - and 0.16Me - per pixel with 2.5 V output range. According to the experimental results, this circuit works well under 5V power supply and achieves 8MHz pixel-data-transmission rate.

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