Prof. Joan M. Redwing Profile

Prof. Joan M. Redwing

Professor MATSE/EE & ASC at Materials Research Institute

SPIE Involvement:

Author

Proceedings Article | 13 March 2024 Presentation

Metalorganic chemical vapor deposition of wafer-scale transition metal dichalcogenide monolayer and heterostructures

Joan Redwing

Proceedings Volume PC12888, PC128880B (2024) https://doi.org/10.1117/12.3003476

KEYWORDS: Metalorganic chemical vapor deposition, Heterojunctions, Transition metals, Sapphire, Monolayers, Mirror surfaces, Passivation, Spectroscopic ellipsometry, Semiconductors, Modulation

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Proceedings Article | 17 March 2023 Presentation

Epitaxial growth of transition metal dichalcogenides for large area device applications

Joan Redwing

Proceedings Volume PC12423, (2023) https://doi.org/10.1117/12.2650891

KEYWORDS: Transition metals, Sapphire, Semiconductors, Metalorganic chemical vapor deposition, Crystals, Photonics, Nanoelectronics, Epitaxy, Annealing

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Proceedings Article | 16 September 2014 Paper

Metalorganic chemical vapor deposition of Bi2Se3 thin films for topological insulator applications

Joseph Brom, Joan Redwing

Proceedings Volume 9174, 91740H (2014) https://doi.org/10.1117/12.2065151

KEYWORDS: Metalorganic chemical vapor deposition, Selenium, Sapphire, Thin films, Crystals, Bismuth, Resistance, Thin film deposition, X-rays, Scanning electron microscopy

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Proceedings Article | 19 September 2013 Paper

Vapor-liquid-solid growth of <110> silicon nanowire arrays

Sarah Eichfeld, Mel Hainey, Haoting Shen, Chito Kendrick, Emily Fucinato, Joanne Yim, Marcie Black, Joan Redwing

Proceedings Volume 8820, 88200I (2013) https://doi.org/10.1117/12.2026825

KEYWORDS: Silicon, Transmission electron microscopy, Gold, Scanning electron microscopy, Solar energy, Crystals, Interfaces, Liquids, Materials science, Nanowires

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Proceedings Article | 28 August 2010 Paper

Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells

Chito Kendrick, Sarah Eichfeld, Yue Ke, Xiaojun Weng, Xin Wang, Theresa Mayer, Joan Redwing

Proceedings Volume 7768, 77680I (2010) https://doi.org/10.1117/12.861571

KEYWORDS: Silicon, Solar cells, Low pressure chemical vapor deposition, Crystals, Diodes, Transmission electron microscopy, Gold, Chemical vapor deposition, Semiconducting wafers, Nanowires

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Proceedings Article | 24 February 2010 Paper

Lithography-free synthesis of freestanding gold nanoparticle arrays encapsulated within dielectric nanowires

Wenchong Hu, Bangzhi Liu, Nicholas Dellas, Sarah Eichfeld, Suzanne Mohney, Joan Redwing, Theresa Mayer

Proceedings Volume 7610, 76100V (2010) https://doi.org/10.1117/12.846766

KEYWORDS: Gold, Silicon, Nanoparticles, Silica, Particles, Thermal oxidation, Transmission electron microscopy, Solids, Nanowires, Oxidation

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Proceedings Article | 12 November 2005 Paper

High density group IV semiconductor nanowire arrays fabricated in nanoporous alumina templates

Joan Redwing, Sarah Dilts, Kok-Keong Lew, Alexana Cranmer, Suzanne Mohney

Proceedings Volume 6003, 60030S (2005) https://doi.org/10.1117/12.632745

KEYWORDS: Germanium, Silicon, Gold, Silver, Nanolithography, Thin film deposition, Doping, Metals, Group IV semiconductors, Nanowires

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Proceedings Article | 14 June 2004 Paper

Synthesis and properties of Si and SiGe/Si nanowires

Joan Redwing, Kok-Keong Lew, Timothy Bogart, Ling Pan, Elizabeth Dickey, A. Carim, Yanfeng Wang, Marco Cabassi, Theresa Mayer

Proceedings Volume 5361, (2004) https://doi.org/10.1117/12.533572

KEYWORDS: Silicon, Germanium, Gold, Nanolithography, Group IV semiconductors, Doping, Transmission electron microscopy, Scanning electron microscopy, Boron, Nanowires

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Proceedings Article | 7 April 1998 Paper

InGaN/GaN double heterostructure laser with cleaved facets

Dean Stocker, E. Schubert, W. Grieshaber, Karim Boutros, J. Flynn, Robert Vaudo, V. Phanse, Joan Redwing

Proceedings Volume 3284, (1998) https://doi.org/10.1117/12.304461

KEYWORDS: Sapphire, Heterojunctions, Gallium nitride, Semiconductor lasers, Metals, Reflection, Vapor phase epitaxy, Indium gallium nitride, Nitrogen lasers, Laser resonators

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Proceedings Article | 7 April 1998 Paper

Yellow photoluminescence in MOCVD-grown n-type GaN

E. Schubert, W. Grieshaber, Karim Boutros, Joan Redwing

Proceedings Volume 3279, (1998) https://doi.org/10.1117/12.304430

KEYWORDS: Luminescence, Gallium nitride, Ultraviolet radiation, Doping, Modulation, Semiconductors, N-type semiconductors, Neodymium, Electrons, Chlorine

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Proceedings Article | 7 April 1998 Paper

InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates

Gary Smith, Karim Boutros, J. Szewczuk, J. Flynn, V. Phanse, Robert Vaudo, Joan Redwing

Proceedings Volume 3279, (1998) https://doi.org/10.1117/12.304424

KEYWORDS: Gallium nitride, Indium gallium nitride, Light emitting diodes, Sapphire, Heterojunctions, Etching, Reactive ion etching, Vapor phase epitaxy, Crystals, Information operations

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Showing 5 of 11 publications

Conference Committee Involvement (1)

2D Photonic Materials and Devices VIII

27 January 2025 | San Francisco, California, United States

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