Dr. John David Cressler Profile

Dr. John David Cressler

at Georgia Institute of Technology

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Author

Publications (6)

Proceedings Article | 15 October 2012 Paper

A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12)

K. C. Praveen, N. Pushpa, Ambuj Tripathi, D. Revannasiddaiah, P. S. Naik, John Cressler, A. P. Gnana Prakash

Proceedings Volume 8549, 85490J (2012) https://doi.org/10.1117/12.925195

KEYWORDS: Ions, Oxygen, Oxides, Silicon, Transistors, Heterojunctions, Sensors, Gamma radiation, Semiconductors, Physics

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Proceedings Article | 8 June 2007 Paper

1/f noise in SiGe HBTs fabricated on CMOS-compatible thin-film SOI

Marco Bellini, Peng Cheng, Aravind Appaswamy, John Cressler, Jin Cai

Proceedings Volume 6600, 66000H (2007) https://doi.org/10.1117/12.724678

KEYWORDS: Thin films, Doping, Temperature metrology, Resistance, Oxides, Thin film devices, Silicon, Interference (communication), Germanium, Interfaces

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Proceedings Article | 8 June 2007 Paper

On the mechanisms of low-frequency noise in vertical silicon pnp BJTs

Peng Cheng, Enhai Zhao, John Cressler, Jayasimha Prasad

Proceedings Volume 6600, 66000C (2007) https://doi.org/10.1117/12.724648

KEYWORDS: Measurement devices, Temperature metrology, Silicon, Transparency, Oxides, Resistance, Transistors, Virtual colonoscopy, Analog electronics, Remote sensing

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Proceedings Article | 23 May 2005 Open Access

Noise in SiGe HBTs: opportunities and challenges

John Cressler

Proceedings Volume 5844, (2005) https://doi.org/10.1117/12.608773

KEYWORDS: Silicon, Transistors, Germanium, Doping, Oscillators, CMOS technology, Manufacturing, Interference (communication), Data modeling, Capacitance

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Proceedings Article | 23 May 2005 Paper

Investigating the differences in low-frequency noise behavior of npn and pnp SiGe HBTs fabricated in a complementary SiGe HBT BiCMOS on SOI technology

Enhai Zhao, Ramkumar Krithivasan, Akil Sutton, Zhenrong Jin, John Cressler, Badih El-Kareh, Scott Balster, Hiroshi Yasuda

Proceedings Volume 5844, (2005) https://doi.org/10.1117/12.609342

KEYWORDS: Transistors, Oxides, Analog electronics, Temperature metrology, Resistance, Physics, Tolerancing, Signal detection, Ionizing radiation, Amplifiers

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Showing 5 of 6 publications

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