Light-current, relative intensity noise and spectral characteristics of a group of gain-guided InGaAsP/InP MQW buried heterostructure laser diodes have been investigated under accelerated aging conditions. The operating current, Iop, at constant output optical power increases logarithmically with time in stable devices, which indicates that the life expectancy of the lasers exceeds 2x105 hours or greater than 20 years. The emitted light wavelength at constant output power shifts by 2-2.5Å during 3000 hours of overstressing, mainly due to the increase in Iop. High-frequency RF signal-induced transient chirp for relative stable LDs at constant output power shows very little change with time.
A detail study of both the optical and electrical low- frequency noise spectra and their correlation factor of graded-index separate-confinement-heterostructure, multiple quantum well strained-layer Fabri-Perot and distributed- feedback InGaAsP/InP laser diodes has been carried out under the wide current and temperature ranges. A particular attention was concentrated to the investigation of optical and electrical fluctuations due to the mode hopping effect, which was observed at specific forward currents and temperatures. Both electrical and optical noises at mode hopping areas have the Lorentzian type spectrum, and are very strongly correlated and very sensitive to temperature and facet reflectivity.
New methods of implementing quantum well intermixing (QWI) in InP-based materials using defect-enhanced diffusion are presented and compared to the widely reported technique employing dielectric (usuall SiO2) capping with subsequent rapid thermal anneal (RTA) treatments. The new methods discussed use InP layers grown either at low temperature by gas-source molecular beam epitaxy (GSMBE) or using He-plasma-assisted GSMBE where growth surface is subjected to a continuous low energy He-plasma generated in an electron cyclotron resonance (ECR) source. The two new QWI processes, and the SiO2 capping method, are applied to a 1.55(mu) m InGaAsP multiple quantum well laser structure. For application of the QWI process the laser structure growths are interrupted in a manner and location appropriate to carrying out the QWI process and subsequent grating etch for the fabrication of a distributed feedback (DFB) laser. After implementing the QWI and grating etch, growth on the top cladding and contact layers completes the device structure. Finally, the fabrication of a DFB laser with an integrated electro-absorption (EA) modulator is described and the resultant characteristics given.
In the past twenty years there has been considerably effort spent in attempting to explain the temperature dependence of the threshold current (Ith) of InGaAsP-InP based semiconductor lasers. These efforts and the mechanisms which have been presumed responsible for this temperature dependence are reviewed. An alternate means of analyzing the threshold current temperature dependence of these lasers, based on a parameter Tmax (rather than the conventional To) is proposed, and a relationship between the parameter Tmax and adjustable device structural and material parameters is presented. Numerous experimental results are analyzed to evaluate the effects of: internal absorption loss; Auger recombination; carrier leakage; and, optical gain on the temperature dependence of InGaAsP-based lasers. It is concluded that the dominant effect on the threshold current temperature sensitivity stems from the temperature dependence of the optical and differential modal gain.
We have measured the time-resolved photoconductive response of a strained InGaAs/InGaAsP/InP multiple quantum well laser structure as a function of temperature and bias. It is found that the hole escape is dominated by tunneling at reverse biases of greater than -0.5 V at all temperatures. Under forward bias, recombination is dominant at temperatures below approximately 90 K while thermal escape processes prevail at higher temperatures. From Arrhenius plots of the hole escape time, the activation energy from the ground level has been determined as a function of bias and is in good agreement with a valence band offset of 75% of the total band offset. The intercepts of the plots yielded a scattering parameter of 6 ps. The carrier dynamics within the well were simulated using a simple model of thermionic emission and gave good qualitative agreement. The calculations indicate that the structures have the potential for extremely fast detection.
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