Dr. Joris Van Campenhout Profile

Dr. Joris Van Campenhout

Program Manager Optical I/O at Univ Gent

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Author

Publications (28)

Proceedings Article | 18 June 2024 Presentation + Paper

Compact 1.31-μm-emission In0.45Ga0.55As/ In0.25Ga0.75As photonic crystal nanoridge laser monolithically grown on 300 mm silicon substrate

Z. Ouyang, D. Colucci, E. M. Fahmy, A. Yimam, J. Van Campenhout, B. Kunert, D. Van Thourhout

Proceedings Volume 13012, 130120D (2024) https://doi.org/10.1117/12.3016154

KEYWORDS: Photonic crystals, Laser crystals, Silicon photonics, Quantum wells, Design

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SPIE Journal Paper | 18 March 2024 Open Access

Thermal modeling of hybrid three-dimensional integrated, ring-based silicon photonic–electronic transceivers (Erratum)

David Coenen, Minkyu Kim, Herman Oprins, Yoojin Ban, Dimitrios Velenis, Joris Van Campenhout, Ingrid De Wolf

JOM, Vol. 4, Issue 01, 019801, (March 2024) https://doi.org/10.1117/12.10.1117/1.JOM.4.1.019801

KEYWORDS: Transceivers, Thermal modeling, Silicon photonics, Silicon, 3D modeling, Modulators, Optical microsystems, Microsystems, Engineering

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Proceedings Article | 9 March 2024 Presentation

Extended silicon photonics platform addressing bioimaging applications in the 1 µm wavelength range

Mathias Berciano, Gunay Yurtsever, Filippo Ferraro, Dieter Bode, Aliaksandra Ivinskaya, Kirill Zinoviev, Jeroen De Coster, Rafal Magdziak, Peter de Heyn, Maumita Chakrabarti, Joris Van Campenhout, Pol Van Dorpe

Proceedings Volume PC12890, PC128900B (2024) https://doi.org/10.1117/12.3003273

KEYWORDS: Silicon photonics, Optical coherence tomography, Waveguides, Miniaturization, Polarization, Photodetectors, Wave propagation, Stereoscopy, Plasma enhanced chemical vapor deposition, Optical imaging

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SPIE Journal Paper | 6 December 2023 Open Access

Thermal modeling of hybrid three-dimensional integrated, ring-based silicon photonic–electronic transceivers

David Coenen, Minkyu Kim, Herman Oprins, Yoojin Ban, Dimitrios Velenis, Joris Van Campenhout, Ingrid De Wolf

JOM, Vol. 4, Issue 01, 011004, (December 2023) https://doi.org/10.1117/12.10.1117/1.JOM.4.1.011004

KEYWORDS: Modulators, Crosstalk, Simulations, Photonic integrated circuits, Thermal modeling, 3D modeling, Thermal effects, Resistance, Design, Transceivers

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Proceedings Article | 30 November 2023 Paper

Wafer-scale graphene electro-absorption modulators fabricated in a 300 mm CMOS platform

Didit Yudistira, Chenghan Wu, Steven Brems, Daire Cott, Alexey Milenin, Kevin Vandersmissen, Arantxa Maestre, Alba Centeno, Amaia Zurutuza, Joris Van Campenhout, Cedric Huyghebaert, Inge Asselberghs, Dries Van Thourhout, Marianna Pantouvaki

Proceedings Volume 12794, 1279408 (2023) https://doi.org/10.1117/12.3008414

KEYWORDS: Graphene, Semiconducting wafers, Resistance, Etching, Silicon, Metals, Chemical mechanical planarization, Waveguides, Oxides, Capacitance

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Proceedings Article | 15 March 2023 Presentation + Paper

Imec silicon photonics platforms: performance overview and roadmap

F. Ferraro, P. De Heyn, M. Kim, N. Rajasekaran, M. Berciano, G. Muliuk, D. Bode, G. Lepage, S. Janssen, R. Magdziak, J. De Coster, H. Kobbi, S. Lardenois, N. Golshani, L. Shiramin, C. Marchese, S. Rajmohan, S. Nadarajan, N. Singh, S. Radhakrishnan, A. Tsiara, P. Xu, A. Karagoz, D. Yudistira, M. Martire, A. Shahar, M. Chakrabarti, D. Velenis, W. Guo, A. Miller, Kristof Croes, S. Balakrishnan, P. Verheyen, Y. Ban, J. Van Campenhout, P. Absil

Proceedings Volume 12429, 1242909 (2023) https://doi.org/10.1117/12.2650579

KEYWORDS: Silicon nitride, Silicon, Low pressure chemical vapor deposition, Waveguides, Silicon photonics, Semiconducting wafers, Tunable filters, Plasma enhanced chemical vapor deposition, Integrated optics, Germanium

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Proceedings Article | 11 March 2021 Presentation + Paper

Towards THz beam steering with integrated phased photomixer arrays

Peter Offermans, Lei Zhang, Sachin Kasture, Roelof Jansen, Peter de Heyn, Jeonghwan Song, Sofie Janssen, Sadhishkumar Balakrishnan, Philippe Soussan, Joris Van Campenhout, Xavier Rottenberg

Proceedings Volume 11685, 116851F (2021) https://doi.org/10.1117/12.2583195

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Proceedings Article | 5 March 2021 Presentation

III-V-on-Si/SiN lasers realized using micro-transfer-printing

Jing Zhang, Camiel Op de Beeck, Bahawal Haq, Bart Kuyken, Dries Van Thourhout, Joris Van Campenhout, Guy Lepage, Peter Verheyen, Agnieszka Gocalinska, Stijn Cuyvers, Emanuele Pelucchi, Brian Corbett, Artur Hermans, Antonio Jose Trindade, Chris Bower, Roel Baets, Gunther Roelkens, Geert Morthier

Proceedings Volume 11705, 117050J (2021) https://doi.org/10.1117/12.2577157

KEYWORDS: Photonic integrated circuits, Silicon, Tunable lasers, Semiconductor lasers, Semiconducting wafers, Wafer-level optics, Silicon photonics, Optical sensors, Optical interconnects, Laser applications

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Proceedings Article | 2 April 2020 Presentation + Paper

High-speed electronics for silicon photonics transceivers

Johan Bauwelinck, Peter Ossieur, Gunther Roelkens, Michael Vanhoecke, Joris Lambrecht, Hannes Ramon, Laurens Breyne, Cedric Bruynsteen, Laurens Bogaert, Joris Van Kerrebrouck, Michiel Verplaetse, Guy Torfs, Bart Moeneclaey, Joris Van Campenhout, Xin Yin

Proceedings Volume 11364, 113640I (2020) https://doi.org/10.1117/12.2558467

KEYWORDS: Silicon photonics, Transceivers, Modulators, Transmitters, High speed electronics, Optical amplifiers, Receivers, Integrated optics, Radio optics

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Proceedings Article | 9 March 2020 Presentation

GaAs nano-ridge lasers on silicon (Conference Presentation)

Dries Van Thourhout, Yuting Shi, Marina Baryshnikova, Yannick De Koninck, Marianna Pantouvaki, Joris Van Campenhout, Bernardette Kunert

Proceedings Volume 11284, 112840D (2020) https://doi.org/10.1117/12.2548320

KEYWORDS: Silicon, Semiconductor lasers, Gallium arsenide, Silicon photonics, Epitaxy, Metals, Waveguides

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Proceedings Article | 26 February 2020 Presentation + Paper

16×16 silicon photonic AWGR for dense wavelength division multiplexing (DWDM) O-band interconnects

K. Fotiadis, S. Pitris, M. Moralis-Pegios, C. Mitsolidou, P. De Heyn, J. Van Campenhout, T. Alexoudi, N. Pleros

Proceedings Volume 11285, 112850F (2020) https://doi.org/10.1117/12.2543749

KEYWORDS: Waveguides, Dense wavelength division multiplexing, Wavelength division multiplexing, Silicon photonics, Data centers, Optical interconnects, Coarse wavelength division multiplexing, Optical communications

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Proceedings Article | 5 March 2019 Presentation

High conversion efficiency terahertz generation using antenna-coupled silicon integrated Ge photodiodes (Conference Presentation)

Peter Offermans, Lei Zhang, Peter de Heyn, Gonzalo Vaca Castano, Sofie Janssen, Sadhishkumar Balakrishnan, Xavier Rottenberg, Joris Van Campenhout

Proceedings Volume 10916, 109161C (2019) https://doi.org/10.1117/12.2513672

KEYWORDS: Terahertz radiation, Silicon, Photodiodes, Germanium, Sensors, Beam steering, Phase contrast, Imaging systems, Complex systems, Continuous wave operation

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Proceedings Article | 4 March 2019 Paper

Through-substrate coupling elements for silicon-photonics-based short-reach optical interconnects

Nivesh Mangal, Jeroen Missinne, Joris Van Campenhout, Geert Van Steenberge, Bradley Snyder

Proceedings Volume 10924, 109240D (2019) https://doi.org/10.1117/12.2510594

KEYWORDS: Multimode fiber coupling lens design, Diffraction gratings, Reflectors, Optical printed circuit boards, Data centers, Photonics, Microlens, Waveguides, Polymer multimode waveguides, Tolerancing, Silicon photonics, Interfaces, Optical interconnects

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Proceedings Article | 4 March 2019 Presentation + Paper

Alignment-tolerant interfacing of a photonic integrated circuit using back side etched silicon microlenses

J. Missinne, N. Teigell Benéitez, N. Mangal, J. Zhang, A. Vasiliev, J. Van Campenhout, B. Snyder, G. Roelkens, G. Van Steenberge

Proceedings Volume 10923, 1092304 (2019) https://doi.org/10.1117/12.2506159

KEYWORDS: Microlens, Tolerancing, Silicon, Photonic integrated circuits, Gaussian beams, Collimation, Optical fibers, Optical alignment, Reactive ion etching, Sensors

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Proceedings Article | 30 January 2018 Paper

High-bandwidth density optically interconnected terabit/s boards

Marco Romagnoli, Gabriele De Angelis, Luigi Tallone, Vito Sorianello, Stefano Tirelli, Bradley Snyder, Peter De Heyn, Yoojin Ban, Lieve Bogaerts, Peter Verheyen, Andy Miller, Joris Van Campenhout, Marianna Pantouvaki, Philippe Absil, Johan Bauwelinck, Xin Yin, Dries Van Thourhout, Joan Juvert Sandez, Roberto Osellame, Rebeca Martínez Vázquez, Diogo Lopes, Giovanni Battista Preve, Aina Serrano Rodrigo, Paola Galli, Guido Chiaretti, Francesco Testa, Alberto Bianchi, Ana Belen Gonzalez

Proceedings Volume 10560, 105600E (2018) https://doi.org/10.1117/12.2295897

KEYWORDS: Waveguides, Photonic integrated circuits, Semiconducting wafers, Silica, Interfaces, Modulators, Silicon, Switches, Light sources, Connectors

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Proceedings Article | 28 April 2017 Presentation

New materials for modulators and switches in silicon photonics (Conference Presentation)

Dries Van Thourhout, Marianna Pantouvaki, Herbert D'Heer, Koen Alexander, Bart Kuyken, Inge Asselberghs, Steven Brems, Cedric Huyghebaert, Leili Abdollahi Shiramin, Chiara Alessandri, John George, Jeroen Beeckman, Min-Hsiang Hsu, Clement Merckling, Joris Van Campenhout

Proceedings Volume 10108, 1010803 (2017) https://doi.org/10.1117/12.2253679

KEYWORDS: Current controlled current source, Modulators, Silicon photonics, Switches, Silicon, Integration, Photonic integrated circuits, Graphene, Ferroelectric materials

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Proceedings Article | 20 April 2017 Presentation

Monolithic/heterogeneous integration of III-V lasers on Si (Conference Presentation)

Zhechao Wang, Bin Tian, Marianna Pantouvaki, Clement Merkling, Joris Van Campenhout, Geert Morthier, Gunther Roelkens, Dries Van Thourhout

Proceedings Volume 10123, 101230G (2017) https://doi.org/10.1117/12.2249903

KEYWORDS: Optical interconnects, Interfaces, Hybrid silicon lasers, Laser processing, Heterojunctions, Silicon, Semiconductor lasers, Laser bonding, Waveguides, Adhesives

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Proceedings Article | 27 July 2016 Presentation

Laser annealed in-situ P-doped Ge for on-chip laser source applications (Conference Presentation)

Ashwyn Srinivasan, Marianna Pantouvaki, Yosuke Shimura, Clement Porret, Rik Van Deun, Roger Loo, Dries Van Thourhout, Joris Van Campenhout

Proceedings Volume 9891, 98911U (2016) https://doi.org/10.1117/12.2227620

KEYWORDS: Germanium, Laser sources, Doping, Epitaxy, Laser applications, Silicon photonics

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Realization of a monolithically integrated on-chip laser source remains the holy-grail of Silicon Photonics. Germanium (Ge) is a promising semiconductor for lasing applications when highly doped with Phosphorous (P) and or alloyed with Sn [1, 2]. P doping makes Ge a pseudo-direct band gap material and the emitted wavelengths are compatible with fiber-optic communication applications. However, in-situ P doping with Ge2H6 precursor allows a maximum active P concentration of 6×1019 cm-3 [3]. Even with such active P levels, n++ Ge is still an indirect band gap material and could result in very high threshold current densities. In this work, we demonstrate P-doped Ge layers with active n-type doping beyond 1020 cm-3, grown using Ge2H6 and PH3 and subsequently laser annealed, targeting power-efficient on-chip laser sources. The use of Ge2H6 precursors during the growth of P-doped Ge increases the active P concentration level to a record fully activated concentration of 1.3×1020 cm-3 when laser annealed with a fluence of 1.2 J/cm2. The material stack consisted of 200 nm thick P-doped Ge grown on an annealed 1 µm Ge buffer on Si. Ge:P epitaxy was performed with PH3 and Ge2H6 at 320oC. Low temperature growth enable Ge:P epitaxy far from thermodynamic equilibrium, resulting in an enhanced incorporation of P atoms [3]. At such high active P concentration, the n++ Ge layer is expected to be a pseudo-direct band gap material. The photoluminescence (PL) intensities for layers with highest active P concentration show an enhancement of 18× when compared to undoped Ge grown on Si as shown in Fig. 1 and Fig. 2. The layers were optically pumped with a 640 nm laser and an incident intensity of 410 mW/cm2. The PL was measured with a NIR spectrometer with a Hamamatsu R5509-72 NIR photomultiplier tube detector whose detectivity drops at 1620 nm. Due to high active P concentration, we expect band gap narrowing phenomena to push the PL peak to wavelengths beyond the detection limit (1620nm) of the setup. Therefore, the 18× enhancement is a lower limit estimation. In this contribution, an extensive study of laser annealing conditions and their impact on material properties will be discussed. A major concern in using highly doped Ge as an active medium is the increase in free-carrier absorption (FCA). However, results reported in [4] suggest that FCA is significantly dominated by holes due to larger absorption cross-section of holes compared to electrons. The FCA results in [4] and JDOS modeling were used to calculate the gain spectrum for the highest doped Ge samples, including the typical 0.25% biaxial tensile strain of epitaxial Ge on Si. A carrier lifetime of 3 ns is required as shown in Fig. 3 for a target threshold current density of sub-20 kA/cm2 which represents at least tenfold reduction when compared to active P-doping level of 6×1019 cm-3. As a result, laser annealed highly doped Ge layers grown with Ge2H6 precursors are a promising approach for realizing a power efficient on-chip Ge laser source.

Proceedings Article | 27 February 2015 Paper

Imec iSiPP25G silicon photonics: a robust CMOS-based photonics technology platform

Philippe Absil, Peter De Heyn, Hongtao Chen, Peter Verheyen, Guy Lepage, Marianna Pantouvaki, Jeroen De Coster, Amit Khanna, Youssef Drissi, Dries Van Thourhout, Joris Van Campenhout

Proceedings Volume 9367, 93670V (2015) https://doi.org/10.1117/12.2076262

KEYWORDS: Silicon, Silicon photonics, Semiconducting wafers, Waveguides, Germanium, Modulators, Photonics, Wave propagation, Standards development, CMOS technology

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Proceedings Article | 4 April 2014 Paper

193nm immersion lithography for high-performance silicon photonic circuits

Shankar Selvaraja, Gustaf Winroth, Sabrina Locorotondo, Gayle Murdoch, Alexey Milenin, Christie Delvaux, Patrick Ong, Shibnath Pathak, Weiqiang Xie, Gunther Sterckx, Guy Lepage, Dries Van Thourhout, Wim Bogaerts, Joris Van Campenhout, Philippe Absil

Proceedings Volume 9052, 90520F (2014) https://doi.org/10.1117/12.2049004

KEYWORDS: Waveguides, Silicon photonics, Wave propagation, Silicon, Photonics, Optical lithography, Semiconducting wafers, Etching, Immersion lithography, CMOS technology

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Large-scale photonics integration has been proposed for many years to support the ever increasing requirements for long and short distance communications as well as package-to-package interconnects. Amongst the various technology options, silicon photonics has imposed itself as a promising candidate, relying on CMOS fabrication processes. While silicon photonics can share the technology platform developed for advanced CMOS devices it has specific dimension control requirements. Though the device dimensions are in the order of the wavelength of light used, the tolerance allowed can be less than 1% for certain devices. Achieving this is a challenging task which requires advanced patterning techniques along with process control. Another challenge is identifying an overlapping process window for diverse pattern densities and orientations on a single layer. In this paper, we present key technology challenges faced when using optical lithography for silicon photonics and advantages of using the 193nm immersion lithography system. We report successful demonstration of a modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology. By careful process design, within-wafer CD variation (1sigma) of <1% is achieved for both isolated (waveguides) and dense (grating) patterns in silicon. In addition to dimensional control, low sidewall roughness is a crucial to achieve low scattering loss in the waveguides. With this platform, optical propagation loss as low as ~0.7 dB/cm is achieved for high-confinement single mode waveguides (450x220nm). This is an improvement of >20 % from the best propagation loss reported for this cross-section fabricated using e-beam lithography. By using a single-mode low-confinement waveguide geometry the loss is further reduced to ~0.12 dB/cm. Secondly, we present improvement in within-device phase error in wavelength selective devices, a critical parameter which is a direct measure of line-width uniformity improvement due to the 193nm immersion system. In addition to these superior device performances, the platform opens scenarios for designing new device concepts using sub-wavelength features. By taking advantage of this, we demonstrate a cost-effective robust single-etch sub-wavelength structure based fiber-chip coupler with a coupling efficiency of 40 % and high-quality (1.1×105) factor wavelength filters. These demonstrations on the 193nm immersion lithography show superior performance both in terms of dimensional uniformity and device functionality compared to 248nm- or standard 193nmbased patterning in high-volume manufacture platform. Furthermore, using the wafer and patterning technology similar to advanced CMOS technology brings silicon photonics closer toward an integrated optical interconnect.

Proceedings Article | 19 February 2014 Paper

Advances in silicon photonics WDM devices

Philippe Absil, Peter De Heyn, Pieter Dumon, Dries Van Thourhout, Peter Verheyen, Shankar Selvaraja, Guy Lepage, Marianna Pantouvaki, Michal Rakowski, Joris Van Campenhout

Proceedings Volume 9010, 90100J (2014) https://doi.org/10.1117/12.2047350

KEYWORDS: Wavelength division multiplexing, Microrings, Modulators, Silicon photonics, Transmitters, Silicon, Resonators, Polarization, Waveguides, Diodes

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Proceedings Article | 31 January 2014 Paper

Mid-IR heterogeneous silicon photonics

Gunther Roelkens, Utsav Dave, Alban Gassenq, Nannicha Hattasan, Chen Hu, Bart Kuyken, Francois Leo, Aditya Malik, Muhammad Muneeb, Eva Ryckeboer, Sarah Uvin, Zeger Hens, Roel Baets, Yosuke Shimura, Federica Gencarelli, Benjamin Vincent, Roger Loo, Joris Van Campenhout, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Xia Chen, Milos Nedeljkovic, Goran Mashanovich, Li Shen, Noel Healy, Anna Peacock, Xiaoping Liu, Richard Osgood, William Green

Proceedings Volume 8993, 899316 (2014) https://doi.org/10.1117/12.2041226

KEYWORDS: Silicon, Waveguides, Mid-IR, Silicon photonics, Absorption, Sensors, Spectrometers, Germanium, Semiconductor lasers, Photonic integrated circuits

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Proceedings Article | 10 May 2012 Paper

Co-integration of Ge detectors and Si modulators in an advanced Si photonics platform

Peter Verheyen, Guy Lepage, Joris Van Campenhout, Marianna Pantouvaki, Philippe Absil, Peter De Heyn, Wim Bogaerts, Pieter Dumon, Shankar Selvaraja

Proceedings Volume 8431, 843114 (2012) https://doi.org/10.1117/12.921747

KEYWORDS: Germanium, Silicon, Modulators, Sensors, Waveguides, Oxides, Silicon photonics, Photonics, Etching, Chemical mechanical planarization

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Proceedings Article | 18 November 2008 Paper

Compact optical modulator based on carrier induced gain of an InP/InGaAsP micro-disk cavity integrated on SOI

Liu Liu, Joris Van Campenhout, Günther Roelkens, Richard Soref, Dries Van Thourhout, Pedro Rojo-Romeo, Philippe Regreny, Christian Seassal, Jean-Marc Fédéli, Roel Baets

Proceedings Volume 7135, 71351I (2008) https://doi.org/10.1117/12.803085

KEYWORDS: Modulation, Waveguides, Silicon, Modulators, Optical modulators, Electrooptic modulators, Thermal optics, Absorption, Picosecond phenomena, Electro optics

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Proceedings Article | 28 February 2008 Paper

III-V silicon heterogeneous integration for integrated transmitters and receivers

D. Van Thourhout, J. Van Campenhout, G. Roelkens, J. Brouckaert, R. Baets

Proceedings Volume 6896, 68960X (2008) https://doi.org/10.1117/12.760376

KEYWORDS: Silicon, Waveguides, Nanophotonics, Semiconductor lasers, Transmitters, Receivers, Semiconducting wafers, Electronic circuits, Etching, Optoelectronic devices

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Proceedings Article | 26 February 2008 Paper

Electrically injected InP microdisk lasers integrated with nanophotonic SOI circuits

J. Van Campenhout, P. Rojo-Romeo, P. Regreny, C. Seassal, D. Van Thourhout, L. Di Cioccio, C. Lagahe, J.-M. Fedeli, R. Baets

Proceedings Volume 6898, 68980L (2008) https://doi.org/10.1117/12.767958

KEYWORDS: Waveguides, Nanophotonics, Pulsed laser operation, Performance modeling, Silicon, Absorption, Continuous wave operation, Laser bonding, Laser damage threshold, Doping

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Proceedings Article | 15 September 2004 Paper

Low-loss photonic wires and compact ring resonators in silicon-on-insulator

Pieter Dumon, Wim Bogaerts, Joris Van Campenhout, Vincent Wiaux, Johan Wouters, Stephan Beckx, Roel Baets

Proceedings Volume 5450, (2004) https://doi.org/10.1117/12.548266

KEYWORDS: Resonators, Waveguides, Silicon, Wave propagation, Polarization, Photonic crystals, Silica, Dispersion, Lithography, Photonic integrated circuits

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Proceedings Article | 20 October 2003 Paper

Large-scale production techniques for photonic nanostructures

Wim Bogaerts, Vincent Wiaux, Pieter Dumon, Dirk Taillaert, Johan Wouters, Stephan Beckx, Joris Van Campenhout, Bert Luyssaert, Dries Van Thourhout, Roel Baets

Proceedings Volume 5225, (2003) https://doi.org/10.1117/12.503665

KEYWORDS: Photonic crystals, Waveguides, Silicon, Etching, Oxides, Lithography, Nanophotonics, Deep ultraviolet, Semiconducting wafers, Photomasks

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Showing 5 of 28 publications

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