On product overlay (OPO), with its continually shrinking budget, remains a constraint in increasing device yield. The OPO performance consists of both scanner and process-related contributors. Both groups need to be addressed and optimized to minimize the overlay in order to keep up with Moore’s law. Examples of process-related overlay contributors are wafer distortion due to patterned stressed thin films and/or etch. Masks can never be made identical since they represent different layers of the device. It has been shown that shape measurements of the wafer can help to correct for most process-induced wafer distortions up to the 3rd order. However, another contributor to overlay challenges is related to photomask flatness. Wafer overlay errors due to non-flatness and thickness variations of a mask need to be minimized. Overlay metrology capability lags the need for improved overlay control, especially for multi-patterning applications. In this paper, we present a new metrology method that generates a very high-resolution shape map of an entire optical photomask optimized for DUV lithography. The technique is measuring the wave front phase change of the reflected light from both the front and backside of a quartz photomask. In this paper we introduce Wave Front Phase Imaging (WFPI), a new method for measuring flatness of an optical photomask that generates a shape map based on local slope. It collects 810 thousand (K) data points on an 86.4mm × 86.4mm area with a spatial resolution of 96μm.
In this study we have developed a compact and versatile phase camera functioning as a wavefront sensor for macroscopy or microscopy applications. This device records two intensity images at different focal points and, with the integration of an electrically tunable lens (ETL), operates in real time. Working with intensity images allows achieving high resolutions, near the actual CCD/CMOS sensor resolution. Here we show the application of the camera in two very different scenarios, a macroscopic application, where the camera was coupled with a simple lens relay to study the behavior of a deformable mirror (DM); and characterize defocus and astigmatism in optical lenses. On the second example, the camera was attached directly to a microscope using a simple c-mount to follow human blood moving in real time.
In this study we have designed, assembled, and characterized a wavefront sensor that works with defocused intensity images and the wavefront phase imaging (WFPI) algorithm. This approach allows for the potential utilization of the entire sensor surface, enabling high-resolution operation. This sensor, equipped with an electrically tuneable lens (ETL), performs focus movements of more than 60 Hz, enough for real time applications. We have developed numerical tools, as a practical software environment, with a graphical user interface (GUI), to make the camera a versatile instrument easily adaptable to different experimental setups without drastic changes in the optical configuration. These tools allow to analyse the wavefront in real time to extract the desired metrics and results.
Wafer overlay errors due to non-flatness and thickness variations of a mask need to be minimized to achieve a very accurate on-product-overlay (OPO). Due to the impact of overlay errors inherent in all reflective lithography systems, EUV reticles will need to adhere to flatness specifications below 10nm, which metric is not possible to achieve using current tooling infrastructure; current metric is showing Peak-to-Valley (PV) flatness of around 60nm. In this paper, we present a new method to generate a very high-resolution photomask shape measurement of an entire optical photomask used in DUV lithography, by measuring both from front side and backside, a technique based on detecting the wave front phase of the reflected light from a quartz photomask. We introduce Wave Front Phase Imaging (WFPI), a new method for measuring flatness that generates a shape map based on local slope. It collects 810 thousand (K) data points on an 86.4mm× 86.4mm area with a spatial resolution of 96μm.
Wave Front Phase Imaging (WFPI), a new wafer geometry technique, is presented, that acquires 16.3 million data points in 12 seconds on a full 300mm wafer, providing lateral resolution of 65μm while holding the wafer vertically. The flatness of the silicon wafers used to manufacture integrated circuits (IC) is controlled to tight tolerances to help ensure that the full wafer is sufficiently flat for lithographic processing. Advanced lithographic patterning processes require a detailed map of the free, non-gravitational wafer shape to avoid overlay errors caused by depth-of-focus issues. For a wafer shape system to perform in a high-volume manufacturing environment, repeatability is a critical measure that needs to be tested. We present WFPI as a new technique with high resolution and high data count acquired at very high-speed using a system where the wafer is free from the effects of gravity and with a very high repeatability as measured according to the Semi standards M49.
On product overlay (OPO) is one of the most critical parameters for continued scaling according to Moore’s law. Besides the lithography scanner, also non-lithography processes contribute to the OPO performance. For example, processes like etching and thin film deposition can introduce stress, or stress changes, in the thin films on top of the silicon wafers. In general, the scanner Higher Order Wafer Alignment model up to 3rd order (HOWA3) has proven to be adequate to correct for most process-induced wafer distortions. This model is typically used with 28 wafer alignment marks placed across the wafer to correct for more global stress-induced distortions. It is evident that if the stress variation manifests itself on shorter length scales, either more alignment marks are needed in combination with a more sophisticated wafer alignment model, or an alternative measurement of the wafer distortion is required. A viable alternative to characterize local wafer deformations is by measuring the free-form wafer-shape change due to processing. In case the wafer-shape change can be translated into a wafer distortion map, it can be complementary to what is already captured by the scanner wafer alignment model. In this paper, we would like to explore this functionality that is based on a new method to measure the free-form wafer shape. Wave Front Phase Imaging (WFPI) generates the wafer shape by registering the intensity of the light reflected off the patterned or blank silicon wafer surface at two different locations along the optical path. The wafer is held vertically to allow for the free-form wafer shape to be measured without being affected by gravity. We show data acquired on specialty made silicon wafers using a WFPI lab tool that acquired 16.3 million data points on a 300mm wafer with 65μm spatial resolution. The obtained free-form wafer-shape measurements are fed into existing prediction models and the resulting wafer distortion maps are compared with scanner measurements.
On product overlay (OPO) is one of the most critical parameters for the continued scaling according to Moore’s law. Without good overlay between the mask and the silicon wafer inside the lithography tool, yield will suffer. As the OPO budget shrinks, non-lithography process induced stress causing in-plane distortions (IPD) becomes a more dominant contributor to the shrinking overlay budget. To estimate the process induced in-plane wafer distortion after cucking the wafer onto the scanner board, a high-resolution measurement of the freeform wafer shape of the unclamped wafer, with the gravity effect removed, is needed. A high-resolution wafer shape map using a feed-forward prediction algorithm, as has been published by ASML, can account for both intra and inter die wafer distortions, minimizing the need for alignment marks on the die and wafer in addition to that it can be performed at any lithography layer. Up until now, the semiconductor industry has been using Coherent Gradient Sensing (CGS) interferometry or Fizeau interferometry to generate the wave front phase from the reflecting wafer surface to measure the free form wafer shape. However, these techniques have only been available for 300mm wafers. In this paper we introduce Wave Front Phase Imaging (WFPI), a new technique that can measure the free form wafer shape of a patterned silicon wafer using only the intensity of the reflected light. In the WFPI system, the wafer is held vertically to avoid the effects of gravity during measurements. The wave front phase is then measured by acquiring only the 2-dimensional intensity distribution of the reflected non-coherent light at two or more distances along the optical path using a standard, low noise, CMOS sensor. This method allows for very high data acquisition speed, equal to the camera’s shutter time, and a high number of data points with the same number of pixels as available in the digital imaging sensor. In the measurements presented in this paper, we acquired 7.3 million data points on a full 200mm patterned silicon wafer with a lateral resolution of 65μm. The same system presented can also acquire data on a 300mm silicon wafer in which case 16.3 million data points with the same 65μm spatial resolution were collected.
On-product overlay (OPO), with its continually shrinking overlay budget, remains a constraint in the continued effort at increasing device yield. Overlay metrology capability currently lags the need for improved overlay control, especially for multi-patterning applications. The free form shape of the silicon wafer is critical for process monitoring and is usually controlled through bow and warp measurements during the process flow. As the OPO budget shrinks, non-lithography process induced stress causing in plane distortions (IPD) becomes a more dominant contributor to the shrinking overlay budget. To estimate the wafer process induced IPD parameters after cucking the wafer inside the lithographic scanner, a high-resolution measurement of the freeform wafer shape of the unclamped wafer is needed. The free form wafer shape can then be used in a feed-forward prediction algorithm to predict both intra field and intra die distortions, as has been published by ASML, to minimize the need for alignment marks on the die and wafer and allows for overlay to be performed at any lithography layer. Up until now, the semiconductor industry has been using Coherent Gradient Sensing (CGS) interferometry or Fizeau interferometry to generate the wave front phase from the reflecting wafer surface. The wave front phase is then used to calculate the slope which again generates a shape map of the silicon wafer. However, these techniques have only been available for 300mm wafers. In this paper we introduce Wave Front Phase Imaging (WFPI), a new technique that can measure the free form wafer shape of a patterned silicon wafer using only the intensity of the reflected light. In the WFPI system, the wafer is held vertically to avoid the effects of gravity during measurements. The wave front phase is then measured by acquiring only the 2- dimensional intensity distribution of the reflected non-coherent light at two or more distances along the optical path using a standard, low noise, CMOS sensor. This method allows for very high data acquisition speed, equal to the camera’s shutter time, and a high number of data points with the same number of pixels as available in the digital imaging sensor. In the measurements presented in this paper, we acquired 7.3 million data points on a full 200mm patterned silicon wafer with a lateral resolution of 65μm. The same system presented can also acquire data on a 300mm silicon wafer in which case 16.3 million data points with the same 65μm spatial resolution were collected.
The shrinking depth of focus of high numerical aperture immersion microlithography optics requires a tight wafer flatness budget. Bare wafer surface topography variation is a significant part of the focus budget for microlithography. Thus, as the wafer surface quality becomes increasingly important, the metrology to control the surface quality is increasingly challenged1. Advanced lithographic patterning processes require a detailed map of the free, non-gravitational, wafer shape, to avoid overlay errors caused by depth-of-focus issues2. The semiconductor industry has been using interferometry-based techniques for measuring the free form wafer shape of blank silicon wafers for several years1. In this paper we introduce a new measurement technique, Wave Front Phase Imaging (WFPI), that can measure the free form wafer shape of a silicon wafer by acquiring only the intensity of the reflected light. In the WFPI system, the wafer is held vertically to avoid the effects of gravity during measurements. The wave front phase is then measured by acquiring the 2-dimensional intensity distribution of the reflected, non-coherent, light at two or more distances along the optical path. This method allows for very high data acquisition speed and a high number of data points equal to the number of pixels available in the CMOS imaging sensor used. In the measurements presented in this paper, we acquired 16.3 million data points on the full 300mm blank silicon wafer, generating a lateral resolution of about 65μm per pixel. Blank silicon wafer manufacturers need to acquire such metrics as bow, warp, and flatness among other parameters, to provide with the silicon wafer when sent to the device maker fabs. These metrics are easily derived by generating a free form wafer shape map of both the front and the back surfaces.
On product overlay (OPO) is one of the most critical parameters for the continued scaling according to Moore’s law. Without good overlay between the mask and the silicon wafer inside the lithography tool, yield will suffer1. As the OPO budget shrinks, non-lithography process induced stress causing in-plane distortions (IPD) becomes a more dominant contributor to the shrinking overlay budget2. To estimate the process induced in-plane wafer distortion after cucking the wafer onto the scanner board, a high-resolution measurement of the freeform wafer shape of the unclamped wafer with the gravity effect removed is needed. Measuring both intra and inter die wafer distortions, a feed-forward prediction algorithm, as has been published by ASML, minimizes the need for alignment marks on the die and wafer and can be performed at any lithography layer3. Up until now, the semiconductor industry has been using Coherent Gradient Sensing (CGS) interferometry or Fizeau interferometry to generate the wave front phase from the reflecting wafer surface to measure the free form wafer shape3,4,5. In this paper, we present a new method, Wave Front Phase Imaging (WFPI) for generating a very high-resolution wave front phase map of the light reflected off of the patterned silicon wafer surface. The wafer is held vertically to allow for the free wafer shape to be measured without having the wafer shape be impacted by gravity. We show data using a WFPI patterned wafer geometry tool that acquires 16.3 million data points on a 300mm patterned silicon wafer with 65μm spatial resolution using a total data acquisition time of 14 seconds.
Wave Front Phase Imaging (WFPI) is a new technique for measuring the free shape of a silicon wafer. To avoid the effects of gravity affecting the wafer shape, the silicon wafer is held vertically while measured using a custom made three-point wafer holder. The wave front phase is measuring using a non-coherent light source that is collimated and then reflected off the silicon wafer surface. The wave front phase is measured using a unique new method that only needs to record the intensity of the reflected light at two or more distances along the optical path. Since only intensity images are used to generate the phase, commercially available CMOS sensors with very high pixel count are used, which enables very high number of data points to be collected at the time required by the cameras shutter speed when using a dual camera setup with simultaneous image acquisition. In the current lab system, a single camera on a linear translation stage is used that acquires 16.3 million data points in 12 seconds, including the stage motion, on a full 300mm wafer providing lateral pixel resolution of 65μm. The flatness of the silicon wafers used to manufacture integrated circuits (IC) is controlled to tight tolerances to help ensure that the full wafer is sufficiently flat for lithographic processing. Advanced lithographic patterning processes require a detailed map of the free, non-gravitational wafer shape, to avoid overlay errors caused by depth-of-focus issues. We present WFPI as a new technique for measuring the free shape of a silicon wafer with high resolution and high data count acquired at very high-speed using a system where the wafer is held vertically without the effects of gravity.
Wave Front Phase Imaging (WFPI) is a new wafer shape measurement technique that acquires millions of data points in just seconds or less, on a full 300mm silicon wafer. This provides lateral resolution well below 100μm with the possibility of reaching the lens’ optical resolution limitation between 3-4μm. The system has high repeatability with root-mean-square (RMS) standard deviation (σRMS) in the single digit nm for the global wafer shape geometry and for nanotopography it reaches in the sub ångström (Å = 10-10 m) range. WFPI can collect data on the entire wafer to within a single pixel away from the wafer edge roll off1. The flatness of the silicon wafers used to manufacture integrated circuits (IC) is controlled to tight tolerances to help ensure that the full wafer is sufficiently flat for lithographic processing. Advanced lithographic patterning processes require a detailed map of the wafer shape to avoid overlay errors caused by depth-of-focus issues2. In this paper we go deep into the theoretical explanation as to how the wave front phase sensor works.
On product overlay (OPO) is one of the most critical parameters for the continued scaling according to Moore’s law. Without good overlay between the mask and the silicon wafer inside the lithography tool, yield will suffer. As the OPO budget shrinks, non-lithography process induced stress causing in plane distortions (IPD) becomes a more dominant contributor to the shrinking overlay budget. To estimate the process induced in-plane wafer distortion after cucking the wafer onto the scanner board, a high-resolution measurement of the freeform wafer shape of the unclamped wafer with the gravity effect removed is needed. Measuring both intra and inter die wafer distortions, a feed-forward prediction algorithm, as has been published by ASML, minimizes the need for alignment marks on the die and wafer and can be performed at any lithography layer. Up until now, the semiconductor industry has been using Coherent Gradient Sensing (CGS) interferometry or Fizeau interferometry to generate the wave front phase from the reflecting wafer surface to measure the free form wafer shape. In this paper, we present a new method to generate a very high-resolution wave front phase map of the reflected light from a patterned silicon wafer surface that can be used to generate the free form wafer shape. We show data using a WFPI patterned wafer geometry tool to acquire 3.4 million data points on a 200mm patterned silicon wafer with 96µm spatial resolution with a data acquisition time of 5 seconds.
Wave Front Phase Imaging (WFPI) is a new wafer shape measurement technique that acquires millions of data points in just seconds or less, on a full 300mm silicon wafer. This provides lateral resolution well below 100μm with the possibility of reaching the lens’ optical resolution limitation between 3-4μm. The system has high repeatability with root-mean-square (RMS) standard deviation (σRMS) in the single digit nm for the global wafer shape geometry and for nanotopography it reaches in the sub ångström (Å = 10-10 m) range. WFPI can collect data on the entire wafer to within a single pixel away from the wafer edge roll off1. The flatness of the silicon wafers used to manufacture integrated circuits (IC) is controlled to tight tolerances to help ensure that the full wafer is sufficiently flat for lithographic processing. Advanced lithographic patterning processes require a detailed map of the wafer shape to avoid overlay errors caused by depth-of-focus issues2. In this paper we go deep into the theoretical explanation as to how the wave front phase sensor works.
The flatness of the silicon wafers used to manufacture integrated circuits (IC) is controlled to tight tolerances to help ensure that the full wafer is sufficiently flat for lithographic processing1. Chemical-Mechanical Planarization (CMP) is one of many processes outside the lithographic sector that will influence wafer flatness across each image lithographic exposure section field and across the wafer2. Advanced lithographic patterning processes require a detailed map of the wafer shape to avoid overlay errors caused by depth-of-focus issues1. In recent years, a metrology tool named PWG5TM (Patterned Wafer Geometry, 5th generation), based on using double Fizeau interferometry to generate phase changes from the interferometric pattern applied to the reflective surface, has been used to generate a wafer geometry map to correct for process induced focus issues as well as overlay problems2. In this paper we present Wave Front Phase Imaging (WFPI); a new patterned wafer geometry technique that measures the wave front phase utilizing two intensity images of the light reflected off the patterned wafer. We show that the 300mm machine acquires 7.65 million data points in 5 seconds on the full 300mm patterned wafer with a lateral resolution of 96μm.
Wave Front Phase Imaging (WFPI), a new wafer geometry technique, is presented, that acquires 7.65 million data points in 5 seconds on a full 300mm wafer providing lateral resolution of 96µm. The system has high repeatability with root-mean-square (RMS) standard deviation (σRMS) in the single digit nm for the global wafer geometry and in the sub ångström (Å = 10-10 m) range for the full-wafer nanotopography for both 200mm and 300mm blank silicon wafer. WFPI can collect data on the entire wafer to within a single pixel, in our case 96µm, away from the wafer edge roll off. The flatness of the silicon wafers used to manufacture integrated circuits (IC) is controlled to tight tolerances to help ensure that the full wafer is sufficiently flat for lithographic processing. Advanced lithographic patterning processes require a detailed map of the wafer shape to avoid overlay errors caused by depth-of-focus issues. We present WFPI as a new technique with high resolution and high data count acquired at very high speed.
Wave Front Phase Imaging (WFPI) is used to measure the stria on an artificial, transparent plate made of Schott N-BK7® glass material by accurately measuring the Optical Path Difference (OPD) map. WFPI is a new technique capable of reconstructing an accurate high resolution wave front phase map by capturing two intensity images at different propagation distances. An incoherent light source generated by a light emitting diode (LED) is collimated and transmitted through the sample. The resultant light beam carries the wave front information regarding the refraction index changes inside the sample1. Using this information, WFPI solves the Transport Intensity Equation (TIE) to obtain the wave front phase map. Topography of reflective surfaces can also be studied with a different arrangement where the collimated light beam is reflected and carrying the wave front phase, which again is proportional to the surface topography. Three Schott N-BK7® glass block samples were measured, each marked in which location the wave front phase measurement will be performed2. Although WFPI output is an OPD map, knowing the value of refractive index of the material at the wavelength used in the measurements will lead to also knowing the thickness variations of the plate.
The flatness of the silicon wafers used to manufacture integrated circuits (IC) is controlled to tight tolerances to help ensure that the full wafer is sufficiently flat for lithographic processing. Advanced lithographic patterning processes require a detailed map of the wafer shape to avoid overlay errors caused by depth-of-focus issues. A large variety of new materials are being introduced in Back-End of Lines (BEOL) to ensure innovative architecture for new applications. The standard in-line control plan for the BEOL layer deposition steps is based on film thickness and global stress measurements which can be performed on blanket wafers to check the process equipment performance. However, the challenge remains to ensure high performance metrology control for process equipment during high volume manufacturing. With the product tolerance getting tighter and tighter and architecture more and more complex, there is an increasing demand for knowledge of the wafer shape. In this paper we present Wave Front Phase Imaging (WFPI), a new wafer geometry technique, where 7.65 million data points were acquired in 5 seconds on a full 300mm wafer enabling a lateral resolution of 96μm.
In this paper we introduce a new metrology technique for measuring wafer geometry on silicon wafers. Wave Front Phase Imaging (WFPI) has high lateral resolution and is sensitive enough to measure roughness on a silicon wafer by simply acquiring a single image snapshot of the entire wafer. WFPI is achieved by measuring the reflected light intensity from monochromatic uncoherent light at two different planes along the optical path with the same field of view. We show that the lateral resolution in the current system is 24μm though it can be pushed to less than 5μm by simply adding more pixels to the image sensor. Also, we show that the amplitude resolution limit is 0.3nm. A 2-inch wafer was measured while laying on a flat sample holder and the roughness was revealed by applying a double Gaussian high pass filter to the global topography data. The same 2-inch wafer was also placed on a simulated robotic handler arm, and we show that even if gravity was causing extra bow on the wafer, the same roughness was still being revealed at the same resolution after a high pass filter was applied to the global wafer geometry data.
In this paper we show that Wave Front Phase Imaging (WFPI) has high lateral resolution and high sensitivity enabling it to measure nanotopography and roughness on a silicon wafer by simply acquiring a single image of the entire wafer. WFPI is achieved by measuring the reflected light intensity from monochromatic uncoherent light at two different planes along the optical path with the same field of view. We show that the lateral resolution in the current system used for these experiments is 24μm but can be pushed to less than 5μm by simply adding more pixels to the image sensor, and that the amplitude resolution limit is 0.3nm. Three 2-inch unpatterned silicon wafers were measured, and the nanotopography and roughness was revealed by applying a double Gaussian high pass filter to the global topography data.
We present a new wave front sensing technique based on detecting the propagating light waves. This allows the user to acquire millions of data points within the pupil of the human eye; a resolution several orders of magnitude higher than current industry standard ophthalmic devices. The first instrument was built and tested using standard calibration surfaces in addition to using an artificial eye. The paper then presents the first characterization of the optics of a real human eye measured using the newly developed high-resolution wave front phase sensing technique showing the complexity of the human eye’s ocular optics.
We present our latest advances in the design and implementation of a tunable automultiscopic display based on the tensor display model. A design comprising a three-layer display was introduced. In such design, front and rear layers were enabled to be controlled in a six-degree of freedom manner related to the central layer of the system. A calibration method consisting on displaying a checkerboard pattern in each layer was proposed. By computing the homography of these patterns with respect to the reference plane, it was possible to estimate the needed adjustments. An implementation based on such design was carried over and calibrated following the aforementioned technique. The obtained results demonstrated the feasibility of such implementation.
In this work we present a novel wave front phase sensing technique developed by Wooptix. This new wave front phase sensor uses only standard imaging sensor, and does not need any specialized optical hardware to sample the optical field. In addition, the wave front phase recovery is zonal, thus, the obtained wave front phase map provides as much height data points, as pixels in the imaging sensor. We will develop the mathematical foundations of this instrument as well as theoretical and practical limits. Finally, we will expose the application of this sensor to silicon wafer metrology and comparisons against industry standard metrology instruments.
In this work we have presented a brief insight into the capabilities of multilayer displays as to selectively display information in relation to the observers. We labeled the views of a light-field as blocked and non-blocked, and then a predefined text was assigned accordingly, modifying it to achieve a privacy criterion in the blocked case. Two ways to define the private views were presented. An evaluation of the output for both techniques was carried over in simulation, in both the spatial and frequency domain. Results showed that privacy was achievable and that each technique had an optimal operation point when taking into account the time-multiplexing capabilities of the multilayer display. Also, a trade-off between the quality of the blocked and non-blocked views was found.
KEYWORDS: 3D displays, LCDs, Lanthanum, Optical engineering, Reconstruction algorithms, Signal to noise ratio, Multiplexing, 3D image processing, Translucency, Display technology
Tensor display is an option in glasses-free three-dimensional (3-D) display technology. An initial solution has to be set to decompose the light-field information to be represented by the system. We have analyzed the impact of the initial guess on the multiplicative update rules in terms of peak signal-to-noise ratio, and proposed a method based on depth map estimation from an input light field. Results from simulations were obtained and compared with previous literature. In our sample, the initial values used have a large influence on results and convergence to a local minimum. The quality of the output stabilizes after a certain number of iterations, suggesting that a limit on such numbers should be imposed. We show that the proposed methods outperform the pre-existing ones.
The discrete Radon transform, DRT, calculates, with linearithmic complexity, the sum of pixels through a set of discrete lines covering all possible slopes and intercepts in an image. In 2006, a method was proposed to compute the inverse DRT that remains exact and fast, in spite of being iterative. In this work the DRT pair is used to propose a Ridgelet and a Curvelet transform that perform focus measurement of an image. Then the shape from focus approach based on DRT pair is applied to a focal stack to create a depth map of a scene.
In this paper, we use information from the light field to obtain a distribution map of the wavefront phase. This distribution is associated with changes in refractive index which are relevant in the propagation of light through a heterogeneous or turbulent medium. Through the measurement of the wavefront phase from a single shot, it is possible to make the deconvolution of blurred images affected by the turbulence. If this deconvolution is applied to light fields obtained by plenoptic acquisition, the original optical resolution associated to the objective lens is restored, it means we are using a kind of superresolution technique that works properly even in the presence of turbulence. The wavefront phase can also be estimated from the defocused images associated to the light field: we present here preliminary results using this approach.
Modern astronomic telescopes take advantage of multi-conjugate adaptive optics, in which wavefront sensors play a key role. A single sensor capable of measuring wavefront phases at any angle of observation would be helpful when improving atmospheric tomographic reconstruction. A new sensor combining both geometric and plenoptic arrangements is proposed, and a simulation demonstrating its working principle is also shown. Results show that this sensor is feasible, and also that single extended objects can be used to perform tomography of atmospheric turbulence.
Plenoptic cameras have been developed the last years as a passive method for 3d scanning, allowing focal stack capture
from a single shot. But data recorded by this kind of sensors can also be used to extract the wavefront phases associated
to the atmospheric turbulence in an astronomical observation.
The terrestrial atmosphere degrades the telescope images due to the diffraction index changes associated to the
turbulence. Na artificial Laser Guide Stars (Na-LGS, 90km high) must be used to obtain the reference wavefront phase
and the Optical Transfer Function of the system, but they are affected by defocus because of the finite distance to the
telescope.
Using the telescope as a plenoptic camera allows us to correct the defocus and to recover the wavefront phase
tomographically, taking advantage of the two principal characteristics of the plenoptic sensors at the same time: 3D
scanning and wavefront sensing. Then, the plenoptic sensors can be studied and used as an alternative wavefront sensor
for Adaptive Optics, particularly relevant when Extremely Large Telescopes projects are being undertaken.
In this paper, we will present the first observational wavefront phases extracted from real astronomical observations,
using punctual and extended objects, and we show that the restored wavefronts match the Kolmogorov atmospheric
turbulence.
Plenoptic cameras have been developed over the last years as a passive method for 3d scanning. Several superresolution
algorithms have been proposed in order to increase the resolution decrease associated with lightfield acquisition with a
microlenses array. A number of multiview stereo algorithms have also been applied in order to extract depth information
from plenoptic frames. Real time systems have been implemented using specialized hardware as Graphical Processing
Units (GPUs) and Field Programmable Gates Arrays (FPGAs).
In this paper, we will present our own implementations related with the aforementioned aspects but also two new
developments consisting of a portable plenoptic objective to transform every conventional 2d camera in a 3D CAFADIS
plenoptic camera, and the novel use of a plenoptic camera as a wavefront phase sensor for adaptive optics (OA).
The terrestrial atmosphere degrades the telescope images due to the diffraction index changes associated with the
turbulence. These changes require a high speed processing that justify the use of GPUs and FPGAs. Na artificial Laser
Guide Stars (Na-LGS, 90km high) must be used to obtain the reference wavefront phase and the Optical Transfer
Function of the system, but they are affected by defocus because of the finite distance to the telescope. Using the
telescope as a plenoptic camera allows us to correct the defocus and to recover the wavefront phase tomographically.
These advances significantly increase the versatility of the plenoptic camera, and provides a new contribution to relate
the wave optics and computer vision fields, as many authors claim.
ELT laser guide star wavefront sensors are planned to handle an expected amount of data to be overwhelmingly large
(1600×1600 pixels at 700 fps). According to the calculations involved, the solutions must consider to run on specialized
hardware as Graphical Processing Units (GPUs) or Field Programmable Gate Arrays (FPGAs), among others.
In the case of a Shack-Hartmann wavefront sensor is finally selected, the wavefront slopes can be computed using
centroid or correlation algorithms. Most of the developments are designed using centroid algorithms, but precision ought
to be taken in account too, and then correlation algorithms are really competitive.
This paper presents an FPGA-based wavefront slope implementation, capable of handling the sensor output stream in a
massively parallel approach, using a correlation algorithm previously tested and compared to the centroid algorithm.
Time processing results are shown, and they demonstrate the ability of the FPGA integer arithmetic in the resolution of
AO problems.
The selected architecture is based in today's commercially available FPGAs which have a very limited amount of
internal memory. This limits the dimensions used in our implementation, but this also means that there is a lot of margin
to move real-time algorithms from the conventional processors to the future FPGAs, obtaining benefits from its
flexibility, speed and intrinsically parallel architecture.
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