We demonstrate Ge metal-semiconductor-metal (MSM) photodetectors monolithically integrated with silicon-oxynitride
(SiOxNy) waveguides. Ge photodetector layer was epitaxially grown by an UHVCVD system and the
waveguide was formed on top of the Ge photodetector by PECVD. The entire process is found to be completely
compatible with the standard CMOS process. Light is evanescently coupled from silicon-oxynitride (SiOxNy)
waveguide to the underlying Ge photodetector, achieving at 2 V a responsivity of 0.33 A/W at 1.55 μm wavelength
and a dark current of 1 μA for a 10 μm long photodetector.
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