Prof. Jürgen H. Christen Profile

Prof. Jürgen H. Christen

Professor at Otto-von-Guericke-Univ Magdeburg

Publications (28)

Proceedings Article | 12 March 2024 Presentation

Advanced nano-characterization of an AlInN/GaN-based photonic bandgap crystal laser structure

Frank Bertram, Gordon Schmidt, Christoph Berger, Peter Veit, Jürgen Bläsing, Armin Dadgar, André Strittmatter, Juergen Christen

Proceedings Volume PC12880, PC1288005 (2024) https://doi.org/10.1117/12.3000941

KEYWORDS: Photonic crystals, Laser crystals, Crystals, Gallium nitride, Waveguides, Waveguide lasers, Superlattices, Scanning electron microscopy, Quantum wells, Quantum processes

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Proceedings Article | 9 March 2024 Presentation

Nano-cathodoluminescence of GaN based power-devices

Gordon Schmidt, Frank Bertram, Jürgen Christen

Proceedings Volume PC12886, PC128860M (2024) https://doi.org/10.1117/12.3000517

KEYWORDS: Gallium nitride, Excitons, Luminescence, Silicon, Scanning electron microscopy, Vapor phase epitaxy, Transistors, Signal intensity, Semiconductors, Scanning transmission electron microscopy

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Proceedings Article | 21 March 2023 Presentation

Optical and structural nano-characterization of GaN-based power devices

Jürgen Christen, Gordon Schmidt, Frank Bertram, Arne Debald, Michael Heuken, Thorsten Zweipfennig, Holger Kalisch, Andrei Vescan

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2649840

KEYWORDS: Luminescence, Spectroscopes, Scanning transmission electron microscopy, Gallium nitride, Excitons, Visualization, Transistors, Spatial resolution, Semiconductors, Scanning electron microscopy

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Proceedings Article | 21 March 2023 Presentation

Nano-characterization of a space-charge region in a pn-diode with long drift layer: detailed cathodoluminescence and EBIC correlation

Konstantin Wein, Frank Bertram, Gordon Schmidt, Peter Veit, Jürgen Christen, Samuel Faber, Bernd Witzigmann, Michael Heuken, Thorsten Zweipfenning, Holger Kalisch, Andrei Vescan, Arne Debald

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2646670

KEYWORDS: Gallium nitride, Temperature metrology, Luminescence, Diffusion, Visualization, Spatial resolution, Scanning electron microscopy, Line scan image sensors, Excitons, Electron microscopes

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Proceedings Article | 20 March 2023 Presentation

Vertical and lateral carrier transport into InP quantum dots of a membrane external-cavity surface-emitting laser structure

Gordon Schmidt, Frank Bertram, Peter Veit, Julie Kernchen, Jürgen Christen, Ana Ćutuk, Michael Jetter, Peter Michler

Proceedings Volume PC12415, PC1241506 (2023) https://doi.org/10.1117/12.2649915

KEYWORDS: Quantum dots, Spectroscopy, Line scan image sensors, Cladding, Visualization, Spatial resolution, Scanning electron microscopy, Imaging spectroscopy, Epitaxy, Electron microscopes

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Proceedings Article | 13 March 2019 Presentation

Probing the homogeneity of an In-rich InGaN layer by nanoscale cathodoluminescence (Conference Presentation)

Bowen Sheng, Xiantong Zheng, Gordon Schmidt, Peter Veit, Ping Wang, Frank Bertram, Zhaoying Chen, Jürgen Christen, Bo Shen, Xinqiang Wang

Proceedings Volume 10918, 109180L (2019) https://doi.org/10.1117/12.2511006

KEYWORDS: Indium gallium nitride, Indium, Scanning electron microscopy, Optoelectronic devices, Gallium nitride, Atomic force microscope, Atomic force microscopy, Luminescence

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Proceedings Article | 4 March 2019 Presentation

Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (Conference Presentation)

Hannes Schuermann, Gordon Schmidt, Christoph Berger, Sebastian Metzner, Peter Veit, Jürgen Bläsing, Frank Bertram, Armin Dadgar, André Strittmatter, Jürgen Christen, Stefan Kalinowski, Gordon Callsen, Stefan Jagsch, Markus Wagner, Axel Hoffmann

Proceedings Volume 10929, 109290A (2019) https://doi.org/10.1117/12.2510350

KEYWORDS: Vapor phase epitaxy, Gallium nitride, Deep ultraviolet, Distributed Bragg reflectors, Quantum dots, Reflectivity, Epitaxy, Single photon, Absorption, Gallium

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Proceedings Article | 14 March 2018 Presentation

Investigation of desorption-induced GaN quantum-dot formation using cathodoluminescence microscopy (Conference Presentation)

Gordon Schmidt, Hannes Schürmann, Sebastian Metzner, Peter Veit, Frank Bertram, Christoph Berger, Jürgen Bläsing, Armin Dadgar, André Strittmatter, Jürgen Christen

Proceedings Volume 10532, 105320N (2018) https://doi.org/10.1117/12.2290737

KEYWORDS: Gallium nitride, Quantum dots, Scanning electron microscopy, Electron microscopes, Metals, Vapor phase epitaxy, Scanning transmission electron microscopy, Microscopy, Ultraviolet radiation, Single photon

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Proceedings Article | 14 March 2018 Presentation

Nanoscopic insights into the structural and optical properties of a thick InGaN shell grown coaxially on GaN microrod (Conference Presentation)

Frank Bertram, Marcus Mueller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Juergen Christen, Jana Hartmann, Hao Zhou, H.H. Wehmann, Andreas Waag

Proceedings Volume 10532, 105321E (2018) https://doi.org/10.1117/12.2288262

KEYWORDS: Indium gallium nitride, Gallium nitride, Luminescence, Electron microscopes, Scanning transmission electron microscopy, Optical properties, Nanorods, Metals, Vapor phase epitaxy, Scanning electron microscopy

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Proceedings Article | 14 March 2018 Presentation

A-plane GaN epitaxial lateral overgrowth structures: growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy (Conference Presentation)

Kasey Hogan, Sebastian Metzner, Frank Bertram, Isra Mahaboob, Emma Rocco, F. Shahedipour-Sandvik, Anja Dempewolf, Jürgen Christen

Proceedings Volume 10532, 105320V (2018) https://doi.org/10.1117/12.2290249

KEYWORDS: Visualization, Vapor phase epitaxy, Interfaces, Gallium nitride, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Luminescence, Microscopy, Sapphire, Silica

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Proceedings Article | 23 February 2018 Presentation + Paper

Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates

K. Ding, V. Avrutin, N. Izyumskaya, S. Metzner, F. Bertram, J. Christen, U. Ozgur, H. Morkoc

Proceedings Volume 10532, 1053208 (2018) https://doi.org/10.1117/12.2291281

KEYWORDS: Gallium nitride, Silicon, Light emitting diodes, Indium gallium nitride, Crystals, Scanning electron microscopy, Indium, Polarization, Optical properties, Interfaces

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Proceedings Article | 19 April 2017 Presentation

Direct comparison of structural and optical properties of a nitride-based core-shell microrod LED by means of highly spatially-resolved cathodoluminescence and u-Raman (Conference Presentation)

Frank Bertram, Marcus Müller, Peter Veit, Christian Nenstiel, Gordon Callsen, Matin Mohajerani, Jana Hartmann, Hao Zhou, Hergo-Heinrich Wehmann, Axel Hoffmann, Andreas Waag, Jürgen Christen

Proceedings Volume 10104, 101041V (2017) https://doi.org/10.1117/12.2251748

KEYWORDS: Scanning electron microscopy, Electron microscopes, Gallium nitride, Quantum wells, Indium gallium nitride, Scanning transmission electron microscopy, Light emitting diodes, Raman spectroscopy, Indium, Optical properties

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Proceedings Article | 5 October 2015 Presentation

Simultaneous optical and structural investigation of nanomaterials and nanostructures for LEDs (Presentation Recording)

Marcus Mueller, Frank Bertram, Gordson Schmidt, Jürgen Christen

Proceedings Volume 9553, 95530D (2015) https://doi.org/10.1117/12.2189907

KEYWORDS: Nanorods, Light emitting diodes, Nanomaterials, Nanostructures, Optoelectronic devices, Gallium nitride, Crystals, Optical properties, Crystallography, Scanning electron microscopy

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Proceedings Article | 13 March 2015 Paper

Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates

Serdal Okur, Alexander Franke, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Frank Bertram, Juergen Christen, Ümit Özgür

Proceedings Volume 9363, 93632O (2015) https://doi.org/10.1117/12.2080265

KEYWORDS: Gallium nitride, Polaritons, Optical microcavities, Reflectivity, Excitons, Photons, Indium gallium nitride, Quantum wells, Luminescence, Temperature metrology

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Proceedings Article | 13 March 2015 Paper

Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers

Morteza Monavarian, Sebastian Metzner, Natalia Izyumskaya, Marcus Müller, Serdal Okur, Fan Zhang, Nuri Can, Saikat Das, Vitaliy Avrutin, Ümit Özgür, Frank Bertram, Juergen Christen, Hadis Morkoç

Proceedings Volume 9363, 93632I (2015) https://doi.org/10.1117/12.2079180

KEYWORDS: Gallium nitride, Epitaxial lateral overgrowth, X-ray optics, Scanning electron microscopy, Luminescence, X-ray diffraction, X-rays, Excitons, Sapphire, Chemical vapor deposition

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Proceedings Article | 13 March 2015 Paper

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Snežana Lazić, Ekaterina Chernysheva, Žarko Gačević, Noemi García-Lepetit, Herko van der Meulen, Marcus Müller, Frank Bertram, Peter Veit, Jürgen Christen, Almudena Torres-Pardo, José González Calbet, Enrique Calleja, José Calleja

Proceedings Volume 9363, 93630U (2015) https://doi.org/10.1117/12.2074898

KEYWORDS: Indium gallium nitride, Single photon, Polarization, Heterojunctions, Excitons, Gallium nitride, Sensors, Nanostructures, Luminescence, Nanowires

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Proceedings Article | 13 March 2015 Paper

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Morteza Monavarian, Sebastian Metzner, Natalia Izyumskaya, Serdal Okur, Fan Zhang, Nuri Can, Saikat Das, Vitaliy Avrutin, Ümit Özgür, Frank Bertram, Jürgen Christen, Hadis Morkoç

Proceedings Volume 9363, 93632P (2015) https://doi.org/10.1117/12.2080325

KEYWORDS: Indium, Gallium nitride, Light emitting diodes, Indium gallium nitride, Heterojunctions, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Quantum efficiency, Indium nitride, Chemical vapor deposition

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Proceedings Article | 8 March 2014 Paper

Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

S. Okur, N. Izyumskaya, F. Zhang, V. Avrutin, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç, Ü. Özgür

Proceedings Volume 8986, 89862B (2014) https://doi.org/10.1117/12.2040621

KEYWORDS: Gallium nitride, Near field optics, Light emitting diodes, Polarization, Silicon, Point spread functions, Near field scanning optical microscopy, Indium gallium nitride, Luminescence, Excitons

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Proceedings Article | 8 March 2014 Paper

Determination of carrier diffusion length in p- and n-type GaN

Shopan Hafiz, Sebastian Metzner, Fan Zhang, Morteza Monavarian, Vitaliy Avrutin, Hadis Morkoç, Christopher Karbaum, Frank Bertram, Jürgen Christen, Bernard Gil, Ümit Özgür

Proceedings Volume 8986, 89862C (2014) https://doi.org/10.1117/12.2040645

KEYWORDS: Diffusion, Gallium nitride, Indium gallium nitride, Magnesium, Absorption, Luminescence, Line scan image sensors, Doping, Integration, Sapphire

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Proceedings Article | 8 March 2014 Paper

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

N. Izyumskaya, S. Okur, F. Zhang, M. Monavarian, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç

Proceedings Volume 8986, 898628 (2014) https://doi.org/10.1117/12.2037930

KEYWORDS: Gallium nitride, Near field optics, Metalorganic chemical vapor deposition, Silicon, Near field scanning optical microscopy, Scanning electron microscopy, Point spread functions, Image quality, Excitons, Chemical vapor deposition

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Proceedings Article | 4 March 2013 Paper

Depth distribution of carrier lifetimes in semipolar (1101) GaN grown by MOCVD on patterned Si substrates

N. Izyumskaya, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç

Proceedings Volume 8625, 86252G (2013) https://doi.org/10.1117/12.2005514

KEYWORDS: Gallium nitride, Near field scanning optical microscopy, Silicon, Metalorganic chemical vapor deposition, Optical properties, Near field optics, Luminescence, Light emitting diodes, Carrier dynamics, Temperature metrology

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Proceedings Article | 1 March 2012 Paper

Excitonic transport in ZnO

Martin Noltemeyer, Frank Bertram, Thomas Hempel, Barbara Bastek, Juergen Christen, Matthias Brandt, Michael Lorenz, Marius Grundmann

Proceedings Volume 8263, 82630X (2012) https://doi.org/10.1117/12.912308

KEYWORDS: Excitons, Diffusion, Scattering, Zinc oxide, Quantum wells, Luminescence, Interfaces, Temperature metrology, Particles

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Proceedings Article | 28 February 2012 Paper

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

N. Izyumskaya, S. Liu, V. Avrutin, S. Okur, F. Zhang, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D. Smith, H. Morkoç

Proceedings Volume 8262, 826224 (2012) https://doi.org/10.1117/12.909235

KEYWORDS: Gallium nitride, Silicon, Sapphire, Metalorganic chemical vapor deposition, Optical properties, Scanning electron microscopy, Quantum wells, Light emitting diodes, Luminescence, Chemical vapor deposition

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Proceedings Article | 19 February 2011 Paper

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

N. Izyumskaya, S. J. Liu, S. Okur, M. Wu, V. Avrutin, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, L. Zhou, D. Smith, H. Morkoç

Proceedings Volume 7939, 79391W (2011) https://doi.org/10.1117/12.875861

KEYWORDS: Gallium nitride, Silicon, Light emitting diodes, Sapphire, Metalorganic chemical vapor deposition, Scanning electron microscopy, Optical properties, Silica, Wet etching, Carbon

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Proceedings Article | 20 February 2007 Paper

Thin film growth of ZnO and its relation to substrate properties

S. Lautenschläger, C. Neumann, S. Graubner, J. Sann, F. Eylert, N. Volbers, B. Meyer, J. Bläsing, A. Krost, F. Bertram, J. Christen

Proceedings Volume 6474, 64740H (2007) https://doi.org/10.1117/12.713685

KEYWORDS: Zinc oxide, Sapphire, Thin films, Annealing, Surface finishing, Luminescence, Gallium nitride, Crystals, Atomic force microscopy, Gallium

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Proceedings Article | 20 February 2007 Paper

Metalorganic vapor phase epitaxy of ZnO: toward p-type conductivity

S. Heinze, A. Dadgar, F. Bertram, A. Krtschil, J. Bläsing, H. Witte, S. Tiefenau, T. Hempel, A. Diez, J. Christen, A. Krost

Proceedings Volume 6474, 647406 (2007) https://doi.org/10.1117/12.715018

KEYWORDS: Zinc oxide, Arsenic, Annealing, Doping, Oxygen, Nitrogen, Zinc, Atomic force microscopy, Crystals, Particle filters

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Proceedings Article | 14 April 2006 Paper

Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

L. Marona, P. Wisniewski, P. Prystawko, S. Porowski, T. Suski, M. Leszczynski, I. Grzegory, R. Czernecki, P. Perlin, T. Riemann, J. Christen

Proceedings Volume 6184, 61840G (2006) https://doi.org/10.1117/12.662327

KEYWORDS: Semiconductor lasers, Quantum efficiency, Gallium nitride, Laser damage threshold, Indium gallium nitride, Reliability, Quantum wells, Mirrors, Optical coatings, Diffusion

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Proceedings Article | 1 April 2005 Paper

Properties of violet laser diodes grown on bulk GaN substrates

Piotr Perlin, Lucja Marona, Tomasz Swietlik, Michal Leszczynski, Pawel Prystawko, Przemyslaw Wisniewski, Robert Czernecki, Gijs Franssen, Szymon Grzanka, Grzegorz Kamler, Jola Borysiuk, Janusz Weyher, Izabella Grzegory, Tadeusz Suski, Sylwester Porowski, Till Riemann, Jurgen Christen

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.587040

KEYWORDS: Gallium nitride, Semiconductor lasers, Crystals, Laser crystals, Gallium, Electrons, Cladding, Pulsed laser operation, Aluminum, Continuous wave operation

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Showing 5 of 28 publications

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