Mr. Jung-Kwan Lee Profile

Jung-Kwan Lee

at Photronics Inc

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 19 May 2008 Paper

Validation of ArF PSM quality using AIMS simulation method in repeated cleaning

Dong-Seok Lee, Hyun-Ju Jung, Jung-Kwan Lee, Woo-Gun Jung, Dong-Heok Lee, Cheol Shin, Sang-Soo Choi, Moon-Hwan Choi

Proceedings Volume 7028, 70282H (2008) https://doi.org/10.1117/12.793051

KEYWORDS: Critical dimension metrology, Transmittance, Photomasks, Air contamination, Semiconducting wafers, Scanning electron microscopy, Atomic force microscopy, Lithographic illumination, Lithography, Computer simulations

Read Abstract +

Proceedings Article | 20 August 2004 Paper

The judgment criteria of halftone pinhole defects

Kyong Mun Shin, Dae-Woo Kim, Jung-Kwan Lee, Dong-Hyuk Lee, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557728

KEYWORDS: Halftones, Transmittance, Inspection, Photomasks, Semiconducting wafers, Ion beams, Defect inspection, Inspection equipment, Image transmission, Defect detection

Read Abstract +

Proceedings Article | 28 August 2003 Paper

Evaluation of EA-PSM opaque repair on 90-nm lithography

Dae-Woo Kim, Jung-Kwan Lee, Sang-Hoi Koo, Dong-Heok Lee, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504210

KEYWORDS: Ion beams, Opacity, Critical dimension metrology, Lithography, Bridges, Photomasks, Image quality, Inspection, Visibility, Phase shifts

Read Abstract +

Proceedings Article | 28 August 2003 Paper

Detection capability for chrome defect of tri-tone PSM

Jung-Kwan Lee, Dae-Woo Kim, Kyong-Mun Shin, Dong-Heok Lee, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504205

KEYWORDS: Inspection, Photomasks, Chromium, Semiconducting wafers, Phase shifts, Transmittance, Light sources, Quartz, Defect inspection, Semiconductors

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Comparative evaluation of mask production CAR development processes with stepwise defect inspection

Woo-Gun Jeong, Jung-Kwan Lee, Dong-Il Park, Eu-Sang Park, Jong-Hwa Lee, Sun-Kyu Seo, Dong-Heok Lee, Jin-Min Kim, Sang-Soo Choi, Soo-Hong Jeong

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467908

KEYWORDS: Inspection, Etching, Photomasks, Photoresist processing, Scanning electron microscopy, Binary data, Dry etching, Defect inspection, Fluctuations and noise, Defect detection

Read Abstract +

Chemically amplified resist (CAR) provides superior lithographic performance compared to traditional e-beam resists in production maskmaking. Parameters benefiting the most are contrast, resolution, and sensitivity. In spite of CAR's advantages, defect control and tighter 50KeV e-beam CAR process restrictions are significantly more critical thanks to smaller geometries, tighter CD specifications, and optical proximity correction (OPC) for 90nm node mask technology. Among defect root causes, resist development is considered to be the one of the most important steps because post-development residue can generate printable defects on finished masks. We investigated the CAR development process across different resist development methods, such as binary and fan-type nozzle spin spray, and puddle development. Several high density binary and embedded-attenuated phase shift masks (EAPSMs) with 70% clear area in the main pattern field were evaluated in an effort to identify and contain post-develop defects in a typical mask production flow. Development step process residue was examined at the after-develop inspection (ADI) step and scanning electron microscopy (SEM) was used for individual defect review. The KLA-Tencor SLF77 TeraStar inspection tool was used to inspect patterns after the development, Cr/MoSiON layer dry etch, and clean steps. The effectiveness of the various CAR development methods has been also studied following development, dry etch, and cleaning inspection by using identical binary and EAPSM masks from production. The mechanism and defect source during the stepwise process and inspections were scrutinized and discussed. Experimental results showed that stepwise process inspection was effective in identifying defects and their sources to prevent defects, and in optimizing each process step. It was found that CAR development and dry etch processes are the most important process steps to control defects in CAR-based mask production. Suggested optimized develop process parameters for 90nm-node mask

Proceedings Article | 11 March 2002 Paper

Defects analysis of mask blanks

Dong-Heok Lee, Dae-Woo Kim, Jung-Kwan Lee, Woo-Gun Jeong, Sang-Soo Choi, Sung-Mo Jung, Soo-Hong Jeong

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458336

KEYWORDS: Photomasks, Inspection, Quartz, Semiconducting wafers, Scanning electron microscopy, Defect detection, Image transmission, Printing, Photography, Image processing

Read Abstract +

Showing 5 of 6 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years