We investigated a negative feedback method for adding functionality to a CMOS image sensor. Our sensor effectively uses the method to set any intermediate voltage into a photodiode capacitance while a pixel circuit is in motion. The negative feedback reset functions as a noise cancellation technique and can obtain intermediate image data during charge accumulation. As an above application, dynamic range compression is achieved by individually selecting pixels and by setting an intermediate voltage or performing quasi-holding with respect to each pixel. Additionally, we achieved duplicated interlaced processing and were able to output frame-difference images without frame buffers. The experimental results obtained with a chip fabricated using a 0.25-μm CMOS process demonstrate that dynamic range compression and intra-frame motion detection are effective applications of negative feedback resetting.
We describe our recent results on the formation of catalyst-free III-V semiconductor nanowires and related nanostructures
utilizing selective-area metalorganic vapor phase epitaxial (SA-MOVPE) growth. Array of vertically aligned nanowires
are grown on partially masked GaAs and InP substrate along the [111]B or [111]A directions, respectively. The alignment
and size of the nanowires are controlled by the mask patterning as well as growth conditions. Nanowires containing
heterostructures in their radial direction have also been realized by controlling the growth mode during SA-MOVPE. Their
optical and transport properties are also investigated and described.
A procedure for the use of the effective-index method (EIM) for high-index-contrast photonic crystal slabs (PCSs) is proposed and discussed. For such a structure, the unperturbed slab supports more than one guided mode in the vertical direction. If the EIM considering the fundamental mode only is used to deal with such a structure, large calculation errors will be introduced into the results. By comparing the gap map in the guided-mode spectrum of the hole-type PCS with those of hole-type two-dimensional photonic crystals (2-D PCs) with different refractive indices, we find that if the refractive index is selected appropriately, the agreement between these two gap maps is very good. The dispersion curves of the effective 2-D line-defect hole-type PC waveguide also agree very well with those of the line-defect hole-type PCS waveguide. However, for the pillar-type PCS, we cannot use the EIM to reduce the required calculation time and computer memory. We think that the main reason for this is the different guiding mechanisms of the optical field in these two types of PCSs.
We emphasize the importance of fabricating planar superlattice (PSL) structures with
the lateral dimension of 100A, in which most carriers are accommodated in sharply
defined ground level. Furthermore, we review our recent studies on the molecular
beam epitaxial (MBE) growth and electronic properties of novel planar superlattice
(PSL) structures, in which an array of monolayer(ML) thick AlAs bars with period of
80-160A is inserted in GaAs layer. These grid inserted heterostructures (GIHSs) are
prepared by depositing 0. 5 monolayer of AlAs during the growth of GaAs on misoriented
substrates. We have found anisotropic electronic structures reflecting
misorientation induced atomic terraces in both optical and electronic properties,
which are in good agreement with theory. This demonstrates that the PSL states are
formed in our GIHSs.
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