CONFERENCE PROCEEDINGS
Advanced Search
Dr. Kaidong Xu
Section Manager, Etch at imec
SPIE Involvement:
Author
Publications (5)
SPIE Journal Paper | 5 March 2015
Gate double patterning strategies for 10-nm node FinFET devices
Hubert Hody, Vasile Paraschiv, David Hellin, Tom Vandeweyer, Guillaume Boccardi, Kaidong Xu
JM3, Vol. 14, Issue 01, 014504, (March 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.1.014504
KEYWORDS: Etching, Line width roughness, Double patterning technology, Critical dimension metrology, Amorphous silicon, Plasma, Extreme ultraviolet, Optical lithography, Photomasks
Proceedings Article | 28 August 2014 Paper
Status and outlook of STT-MRAM development
T. Min, G. Kar, J. Swerts, S. Mertens, S. Coseman, J. Bekaert, K. Xu, L. Souriau, D. Radisic, H. Okuyama, K. Nishimura, T. Seino, K. Tsunekawa
Proceedings Volume 9167, 91671B (2014) https://doi.org/10.1117/12.2063079
KEYWORDS: Resistance, Annealing, Lithography, Electrodes, Switching, Magnetism, Optical lithography, Deposition processes, Extreme ultraviolet, Ferromagnetics
Proceedings Article | 28 March 2014 Paper
Gate double patterning strategies for 10nm node FinFET devices
Hubert Hody, Vasile Paraschiv, David Hellin, Tom Vandeweyer, Guillaume Boccardi, Kaidong Xu
Proceedings Volume 9054, 905407 (2014) https://doi.org/10.1117/12.2045647
KEYWORDS: Etching, Line width roughness, Amorphous silicon, Double patterning technology, Photoresist materials, Optical lithography, Extreme ultraviolet lithography, Critical dimension metrology, Plasma, Silicon
SPIE Journal Paper | 4 September 2013
Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning
Kaidong Xu, Laurent Souriau, David Hellin, Janko Versluijs, Patrick Wong, Diziana Vangoidsenhoven, Nadia Vandenbroeck, Harold Dekkers, Xiaoping Shi, Johan Albert, Chi Lim Tan, Johan Vertommen, Bart Coenegrachts, Isabelle Orain, Yoshie Kimura, Vincent Wiaux, Werner Boullart
JM3, Vol. 12, Issue 04, 041302, (September 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.041302
KEYWORDS: Line width roughness, Optical lithography, Etching, Line edge roughness, Photomasks, Silicon, Extreme ultraviolet lithography, Plasma, Plasma enhanced chemical vapor deposition, Lithography
Proceedings Article | 29 March 2013 Paper
15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU
K. Xu, L. Souriau, D. Hellin, J. Versluijs, P. Wong, D. Vangoidsenhoven, N. Vandenbroeck, H. Dekkers, X. Shi, J. Albert, C. Tan, J. Vertommen, B. Coenegrachts, I. Orain, Y. Kimura, V. Wiaux, W. Boullart
Proceedings Volume 8685, 86850C (2013) https://doi.org/10.1117/12.2011586
KEYWORDS: Line width roughness, Etching, Optical lithography, Line edge roughness, Photomasks, Extreme ultraviolet lithography, Photoresist materials, Plasma, Silicon, Lithography
SIGN IN TO:
  • View contact details
UPDATE YOUR PROFILE
Is this your profile? Update it now.
Sign into your SPIE.org account
Don’t have a profile and want one?
Create an account on SPIE.org
Advertisement
Advertisement
Back to Top