The underwater photoelectric detection equipment mainly uses 532 nm laser as the light source, and GaAlAs with Al component of 0.63 can obtain the cutoff wavelength near 532 nm, which is an excellent photocathode material to meet the requirement of narrow band spectral response of 532 nm laser. Furthermore, the light absorptance of the cathode can be improved effectively by the quadrangular prism or cylinder nanostructured arrays prepared on the reflection-mode Ga0.37Al0.63As cathode surface, and the maximum light absorptance can reach 96.2% at 532 nm, when the cylinder nanostructured array with a height of 900 nm and a base width of 100 nm. Nevertheless, the Ga0.37Al0.63As cathode with the quadrangular prism nanostructured array is less influenced by the incident angle of light.
Underwater photoelectric detection equipment with 532 nm laser as light source needs to match specific photocathodes to achieve the purpose of high quantum efficiency and narrow-band response. NEA GaAlAs photocathodes have a series of advantages, such as high quantum efficiency, adjustable spectral response cutoff threshold and long lifetime to serve as the devices for underwater detection. However, the quantum efficiency of GaAlAs photocathodes is not high enough to meet the actual detection requirements. In addition, micro-nano structures on the surface of materials have been proved to be an effective method to improve optical absorption. In this paper, four kinds of nanostructures including square column, cylinder, square cone and cone are designed. By the finite difference time domain method, results show that the optical absorptivity of reflection-mode GaAlAs photocathodes can be effectively improved. The optical absorptivity of square cone nanostructures increases and tends to be stable with the increase of filling factor. The optical absorptivity is approximately 100% at blue-green light region including 532 nm, and has an abrupt cutoff feature. Otherwise, when the absorptivity of square cone nanostructures is high and stable, the most intense light absorption part will move to the top of nanostructures with the increase of filling factor, thus effectively shortening the electron transport distance and improving the photoemission capability.
In order to research H+ beam radiation on photoelectric performance of GaAs photocathodes used in low-light-level optoelectronic devices, based on Monte-Carlo method, quick calculation of damage, along with effects of Cs and Cs-O activation layer on ion trajectory, performance, ionization of ions and recoils are discussed. From the simulation results, the average stopping range increases with the increase of incident energy, and the dispersion varies with the incident angle, the minimum dispersion at 1 keV is obtained at 60° when Cs-O ratio is 2:1, and the minimum dispersion at 2 keV is obtained at 60° when Cs-O ratio is also 2:1. In addition, the produced vacancies increase with the incident energy while the value is almost not influenced by the incident angle, and the backscattered ions increase as the incident angle increase both in 1 keV and 2 keV cases, and decrease with the incident energy. Also, ionization dominate the H+ ion bombarding process instead of producing vacancies and phonons. With the increase of incident energy, the percentage of ionization of ions increases, while those of phonons of ions and ionization of recoils decrease. However, the corresponding percentages of ions and recoils remain nearly unchanged with the increase of incident angle and the variation of composition of Cs or Cs-O activation layer.
The desorption of oxygen and carbon contamination are a key issue on improving the quantum efficiency of negative electron affinity GaAs-based photocathode during the preparation process. In this article, O-bonded and C-bonded absorption are executed in the calculation of pristine (100)-oriented GaAs photocathode of planar structure and nanowire structure. By analyzing the absorption energy, work function and dipole moments of different adsorption models, it is found that the adsorption of impurity atoms changed atomic and electronic structure of GaAs(100) pristine surface and affected the stability. The findings suggest that, oxygen impurities are more difficult to remove than carbon impurities due to more negative absorption energies especially in the surface layer. However, C-absorbed models may have bigger work function values than O-absorbed models in the most cases, which are not beneficial to the photoemission, and the phenomenon can be verified by the calculation results of surface dipole moments.
The realistic simulation of the cloud background has certain difficulty because of its appearance and irregular arbitrary distribution. In order to more realistically simulate cloud background, a multi-layer "cloud particle" superposition model is proposed in this paper based on the characteristics of real cloud background. First, characteristics of remote sensing of clouds under different distribution frequency are collected and the laws within them are analyzed. Second, the generation space of the "cloud particles" that will be generated is delimited based on the fractal theory. Third, cloud images at different frequency are generated based on the characteristic laws of the real cloud images. And finally, the multi-layer images are merged by linear superposition. The method used in this paper is also with controllable coverage, the remote sensing cloud images under different coverage, therefore, can be simulated.
Negative-electron-affinity GaAs-based photocathodes have already found widespread application in modern night vision detectors and vacuum electron sources. Considering the importance of surface micro-area analysis for cathode preparation, a new ultrahigh vacuum interconnection system for photocathode preparation and characterization was developed, wherein the scanning focused X-ray imaging positioning technique combined with the X-ray induced secondary electron image was applied to characterize the surface components in the specified micro region of semiconductor photocathodes. With the aid of the advanced characterization technique, the surface components of micro regions of interest for GaAs cathode samples after cleaning and Cs-O activation were analyzed. The experimental results show that the GaAs cathode samples would be subjected to secondary contamination from the metal sheet of sample holder, accompanied by a small amount of sodium and cesium. The subsequent heat treatment and Cs-O activation can hardly remove the sodium contamination, which can affect the arsenic desorption during heat treatment, hinder the Cs-O adsorption in the activation process, and finally reduce the photoemission performance of the activated cathode. Through the application of the X-ray induced secondary electron image, the optimal cleaning method for GaAs cathode was investigated. This surface characterization technique is of practical value to improving analysis accuracy and optimizing the cathode preparation process.
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