We have for the first time recorded action potentials in rat hippocampus neurons when they were stimulated by
subnanosecond electric pulses. The preliminary results show that applying a series of pulses allowed the accumulation of
depolarization before activating the voltage gated channels. The depolarization only occurred when the electric pulses
were applied. It is unclear whether the depolarization is caused by the charge accumulation across the membrane or the
cation influx due to the membrane permeabilization. We have also conducted an electromagnetic simulation of
delivering subnanosecond pulses to tissues using an impulse radiating antenna. The results show that the pulses can be
confined in the deep region in the brain but the amplitude is reduced significantly due to the attenuation of the tissues. A
partially lossy dielectric lens may be used to reverse the decreasing trend of the electric field.
Experimental studies on single cells have shown that application of pulsed voltages, with submicrosecond pulse duration and an electric field on the order of 10 kV/cm, causes sudden alterations in the intracellular free calcium concentration, followed by immobilization of the cell. In order to examine electrical stimulation and incapacitation with such ultrashort pulses, experiments on anesthetized rats have been performed. The effect of single, 450 nanosecond monopolar pulses have been compared with that of single pulses with multi-microsecond duration (TASER pulses). Two conditions were explored: 1. the ability to elicit a muscle twitch, and, 2. the ability to suppress voluntary movement by using nanosecond pulses. The second condition is relevant for neuromuscular incapacitation. The preliminary results indicate that for stimulation microsecond pulses are advantageous over nanosecond pulses, whereas for incapacitation, the opposite seems to apply. The stimulation effects seem to scale with electrical charge, whereas the disruption effects don't follow a simple scaling law. The increase in intensity (time of incapacitation) for a given pulse duration, is increasing with electrical energy, but is more efficient for nanosecond than for microsecond pulses. This indicates different cellular mechanisms for incapacitation, most likely subcellular processes, which have been shown to become increasingly important when the pulse duration is shortened into the nanosecond range. If further studies can confirm these initial results, consequences of reduced pulse duration are a reduction in weight and volume of the pulse delivery system, and likely, because of the lower required energy for neuromuscular incapacitation, reduced safety risks.
KEYWORDS: Calcium, Phase modulation, Cell death, Picosecond phenomena, Tissues, Luminescence, Colon, Tumors, In vivo imaging, Green fluorescent protein
Nanosecond, high intensity pulsed electric fields [nsPEFs] that are below the plasma membrane [PM] charging time constant have decreasing effects on the PM and increasing effects on intracellular structures and functions as the pulse duration decreases. When human cell suspensions were exposed to nsPEFs where the electric fields were sufficiently intense [10-300ns, ≤300 kV/cm.], apoptosis signaling pathways could be activated in several cell models. Multiple apoptosis markers were observed in Jurkat, HL-60, 3T3L1-preadipocytes, and isolated rat adipocytes including decreased cell size and number, caspase activation, DNA fragmentation, and/or cytochrome c release into the cytoplasm. Phosphatidylserine externalization was observed as a biological response to nsPEFs in 3T3-L1 preadipocytes and p53-wildtype and -null human colon carcinoma cells. B10.2 mouse fibrosarcoma tumors that were exposed to nsPEFs ex vivo and in vivo exhibited DNA fragmentation, elevated caspase activity, and reduced size and weight compared to contralateral sham-treated control tumors.
When nsPEF conditions were below thresholds for apoptosis and classical PM electroporation, non-apoptotic responses were observed similar to those initiated through PM purinergic receptors in HL-60 cells and thrombin in human platelets. These included Ca2+ mobilization from intracellular stores [endoplasmic reticulum] and subsequently through store-operated Ca2+ channels in the PM. In addition, platelet activation measured as aggregation responses were observed in human platelets. Finally, when nsPEF conditions followed classical electroporation-mediated transfection, the expression intensity and number of GFP-expressing cells were enhanced above cells exposed to electroporation conditions alone.
These studies demonstrate that application of nsPEFs to cells or tissues can modulate cell-signaling mechanisms with possible applications as a new basic science tool, cancer treatment, wound healing, and gene therapy.
The charging of mammalian cell plasma membranes in response to ultrashort pulsed electric fields of 60 ns and field strengths up to 100 kV/cm was investigated. Membranes of Jurkat cells were stained with a potential-sensitive dye, Annine-6 and placed in a microreactor mounted on an inverted fluorescence microscope. Images of changes in the fluorescence intensity during the exposure were recorded with a high-sensitivity CCD-camera. A temporal resolution of 5 ns was achieved by illuminating the cells with a 5 ns laser pulse from a dye-laser. The laser pulse was synchronized with the high voltage pulse to record images at specific times before, during and after exposure to the electric field. When exposing Jurkat cells to a 60 ns, 100 kV/cm pulse, each hemisphere of the plasma membrane (as oriented with respect to the electrodes) responded uniquely to the applied field. From these observations it is possible to draw conclusions on the charging time of the membrane, maximum transmembrane voltages and the onset of poration.
Relativistic, intense beam-driven High Power Microwave (HPM) sources emerged as consequence of the development of pulsed power. In this context, pulsed power refers to components of a system following the prime power source, and before the load, which is typically an electron beam diode. Progress in fielding HPM sources on mobile platforms requires developing more compact pulsed power drivers. The Air Force Office of Scientific Research is sponsoring, using resources allocated by DDR&E, a Multidisciplinary University Research Initiative (MURI) program to study basic phenomena and processes that can lead to the design of more compact pulsed power systems. The University of New Mexico is leading a consortium, uniting researchers at Old Dominion University and the University of Nevada-Reno, to study basic phenomena relating to breakdown in solid and liquid dielectrics, high dielectric constant ceramics for use in compact, folded Blumlein transmission lines, gas switches, thermal management in compact pulsed power systems, among other topics. This paper describes the research activities on this program that are being performed in the initial year.
Hollow cathode discharge devices with hole dimensions in the range from 0. 1 —0.5 mm (microhollow cathode discharges or MHCDs) can be operated at high pressure (up to and exceeding atmospheric pressure). MHCDs are known to be efficient sources of non-coherent ultraviolet (UV) and vacuum ultraviolet (VUV) radiation when operated in rare gases, rare gas — halide mixtures, and gas mixtures containing rare gases and trace amounts of gases such as H2, 02, and N2. Highest internal efficiencies in direct current MHCD excimer sources of close to 10% were obtained in xenon at a pressure of 400 Ton. By applying nanosecond electrical pulses to the dc discharge the efficiency could be increased to approximately 20%. The radiative emittance which for dc discharges in xenon was measured as 1 .4 W/cm2 could be increased to over 15 W/cm2 through pulsed operation. In addition to rare gas and rare-gas halide excimer emission, intense, monochromatic atomic line emissions have been reported from high-pressure MHCD plasmas in pure rare gases and in rare gases admixed with trace amounts (less than 1 %) of H2, O2, and N2. . The atomic line emission is the result of a near-resonant energy transfer process involving the excimers and the diatomic molecules. For instance, Ne2* excimers in the bound 3?u state have enough energy to dissociate H2 and excite one of the H atoms to the n —2 state. The subsequent decay of the excited H atom results in the emission ofthe 121.6 nm H Lyman-? line. We discuss the results of dc and time-resolved emission spectroscopy in the UV and VUV to elucidate the microscopic mechanisms of the rare gas excimer formation and emission processes, the properties of the MHCD plasma, and microscopic details of the near-resonant energy transfer processes that lead to the emission of the intense atomic line radiation in the range 100 — 1 30 nm.
KEYWORDS: Bacteria, Microorganisms, Organisms, Capacitance, Cooling systems, Oceanography, Water, Information operations, Medical research, Energy efficiency
Previous studies on the effect of microsecond pulsed electric fields on bacteria have shown that the lethality increases linearly with pulse duration and exponentially with electric field strength. In order to determine the validity of this law for submicrosecond pulses, we applied pulses of fifty nanosecond duration to two strains of E. coli and to a marine crustacean. The results indicated that even at this short pulse duration, the empirical law not only holds for bacteria, but also for more complicated organisms. Theoretical considerations, however, and the observation of a pronounced difference in the field induced lethality of two strains of E. coli led us to believe that a change in the effect can be expected when the pulse duration is reduced further. The observed dependance of micro-organism lethality or temporary damage on field strength and pulse duration allows us to improve the energy efficiency of systems which make use of the effect. Examples are sterilizers (e.g., for food and water) and electrical filters for the prevention of biofouling in cooling systems.
The Bistable Optically controlled Semiconductor Switch (BOSS) is currently the only completely controllable high power solid state switch which operates on sub-nanosecond to microsecond time scales. The present state of BOSS technology is discussed, including the present limits of operation and potential extensions of these limits. Current and novel applications which take best advantage of the BOSS performance characteristics are described.
We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. Numerical simulations have also been carried out to analyze the effect. The intensity dependent lifetimes obtained from the simulations match the experiments very well. Such a nonlinear intensity dependence could have possible low-energy phototransistor applications.
Current transient spectroscopy has been used to determine the deep level structure in natural diamond up to activation energies of 1 eV. The material was activated by high-energy electrons. By varying the energy and consequently the range of the electrons in diamond, it was possible to obtain information on the depth distribution of three deep centers. The current transients were evaluated by applying a curve-fitting technique, which provides a better energy resolution than the commonly used window technique.
The electric field structure in GaAs photoconductive switches was recorded by means of an optical diagnostic technique which is based on the Franz-Keldysh effect. At low voltages a 100 micrometers wide region of high electric field strength was seen at the cathode only. With increasing voltage, but below the lock-on value, strong domain like field structures emerge in the anode region. At voltages where lock-on of the photocurrent occurred, current filaments were recorded which seem to shorten the electric field structures. Damage due to filamentation was observed mainly at the contacts. Increasing the intensity of the activating laser and consequently the photocurrent caused the electric field in the domains near the anode to increase and resulted in a lowering of the threshold value for lock-on.
Order of magnitude estimates suggest that optically controlled bulk semiconductor switches should be able to withstand voltages up to the product of their thickness and the dielectric strength of their material. In reality, however, the devices fail--i.e., exhibit a behavior that resembles dielectric breakdown--already at voltages which are much lower. This deficiency threatens to limit the prospects of the device concept quite seriously and has so far not completely been understood. In our paper, we discuss several mechanisms which may underlie the observed phenomenon, and focus in particular on the dynamical aspects of it, namely on the sudden transition ('sudden breakdown') which takes the switch within a few ns from the resistive off-state to a highly conductive on-state. We investigate a scenario that relates this transition to a second effect also seen during breakdown, namely to the spontaneous onset of current filamentation, and speculate that the magnetic self-contraction of the current (known as the 'pinch effect') may play an essential role in the process. On the basis of a mathematical device model which incorporates the effects of particle transport and magnetic interaction, we obtain quantitative results for the speed and the threshold of magnetically driven filamentation, and find those numbers to lie in the A and the microsecond(s) region, respectively. We conclude that the magnetic pinch may play a essential role in the dynamics of current filamentation and fast breakdown, but cannot explain the fast observed current rise in the ns-range by itself.
The temporal development of electric field distribution and temperature distribution in photoconductive, gallium arsenide (GaAs:Si:Cu) switches was studied by means of absorption measurements near the bandedge of gallium arsenide. Regions of high absorption, corresponding to enhanced field strength, were recorded close to the cathode contact for low applied fields (E < 20 kV/cm), and at both contacts for higher fields. Breakdown was observed at voltages where the absorption patterns merged. For low intensity laser activation the absorption became temporarily (during laser activation) homogeneous over the switch area, but the pattern emerged again during the tail current phase and became even more pronounced than before. After turning the voltage off, the absorption in certain regions of the switch decayed only slowly, with a time constant of about hundred nanoseconds, indicating local heating of the switch. At high laser intensities the absorption pattern, generated through pulse biasing of the sample, disappeared completely during laser activation. The switch stayed homogeneous, where electric field and temperature are concerned, even during the following lock-on phase, and recovered right after the switch voltage was turned off. The results show that energies in excess of 1 mJ/cm2 are needed to eliminate field inhomogenetics in photoconductive GaAs:Si:Cu switches and to obtain nanosecond switch recovery.
Zinc Selenide, in polycrystalline and single crystal form, and chemical vapor deposition (CVD) grown diamond films were studied with respect to their application as materials for electron-beam activated
switches. The hold-off fields of the three materials were found to exceed that of semi-insulating gallium arsenide by at least an order of magnitude. Highest hold-off fields for pulsed voltage operation were recorded for diamond at 1.8 MV/cm. The electron-beam induced conductance in the 1 mm thick single crystal zinc selenide switches reached values of 0.5 (Ωcm2)-1 with an electron-beam current density of 20 mA/cm2 at electron-energies of 150 keV. This corresponds to an electron-beam induced reduction of switch resistance from 108 Ω to 2 Ω per square centimeter. The dominant carrier loss mechanism in the
single crystal zinc selenide switch was found to be direct recombination of electron-hole pairs. In this material, the current, after electron-beam turn-off, decays hyperbolically with 90% to 10% falitimes in
the range of hundreds of nanoseconds. The electron-beam induced conductivity in CVD grown diamond
films of 1 micrometer thickness is due to the subnanosecond carrier lifetime less than three orders lower
than that of single crystal zinc selenide. Both materials, single crystal zinc selenide and diamond, showed
a lock-on effect in current. For diamond it could be demonstrated, as before for gaffium arsenide, that
this effect can be suppressed by proper choice of contacts.
As a material for high power solid state switches, diamond promises to outperform any other semiconductor material because of its high dielectric strength, high electron and hole mobility and its excellent thermal properties. With the conductance controlled by high energy electron- beams, which can be generated using standard vacuum tube technology, thin film diamond switches can be given a very simple and compact design. This manuscript discusses the promises and limitations of this novel switch concept on the basis of steady state and transient device simulation, and investigates in particular, the suitability of electron-beam controlled diamond switches for closing and opening applications.
The bulk optically controlled semiconductor switch (BOSS) is a concept based on modulating the bulk conductivity (sigma) of copper-compensated, silicon-doped gallium arsenide (GaAs:Si:Cu). Using laser light at (lambda) equals 1 micrometers , (sigma) can be increased to greater than 1 ((Omega) cm)-1, and then returned to values comparable to the equilibrium value of (sigma) < 10-4 ((Omega) cm)-1 by illuminating the bulk with an infrared laser at (lambda) approximately equals 2 micrometers . This reversible process forms the switching cycle of the BOSS device. Experimental verification of the essential features of the BOSS switching cycle has been reported at low values of current density; however, power scaling experiments have revealed behavior too complex to be explained by a zero-dimensional model based strictly on conductivity. For this reason, a one- dimensional time-dependent computer code has been developed to analyze the effects of current transport and spatial inhomogeneity in a BOSS device. Electron and hole transport are modeled self-consistently with electron and hole continuity equations and the Poisson equation. The computer code includes the effects of deep-level trapping kinetics, and the boundary conditions model those of a forward-biased p-i-n device. The low-current density results of the 1-d model are verified against the 0-d conductivity model; deviations from the 0-d model as the current density is increased are reported and qualitatively compared against available power-scaling data.
A model for the high voltage breakdown of semiconductors is
developed which can be applied to new high power switches, which were
presented on the 18th ICHSPP, or to well known Zener diodes. Computer
calculations show that a breakdown may result in localiced current
streams. The distribution of the current is inhomogenious in general.
The current distribution may show periodicity in space and in time,
similar to sawtOoth oscillations with a constant frequency. This
frequency can be varied by external parameters. Or it may be chaotic,
then a broad frequency spectrum is produced.
A model of one-electron states is developed for the energy levels of substitutional chromium ions in GaAs. This strong-crystal field approach allows for t2- and e-type states of the ions Cr4(d2) Cr3(d3) Cr2(d4) and Cr(d5) in a Td environment. A great deal of the reported experimental evidence can be reconciled in a uniform picture by taking into account donor- and acceptor-like processes and internal transitions of these oxidation states. These deliberations are supported by cryo-temperature cathodoluminescence measurements in the near-infrared range.
Copper compensated silicon doped semiinsulating gallium arsenide (GaAs:Si:Cu) has been shown to exhibit the characteristics of a high-power optically controlled switch that can be closed and opened on a nanosecond time scale [1]. In such switches it is possible to activate and deactivate photoconductivity on command with two laser pulses of different wavelengths [2]. Infrared quenching measurements at low fields show complete quenching of the persistent photoconductivity. At fields greater than 3. 5 kV/cm the quenching is temporarily effective against " lock-on" currents. In order to better understand the switch behavior and be able to optimize switch performance modeling studies have been performed. Basic deep level data for the modeling have been obtained from photo-induced current transient spectroscopy (PICTS). The method and results of measurements on basic deep level parameters such as activation energy are discussed. Experimental studies on current voltage characteristics at high fields show negative differential conductivity.
Measurements and model calculations on semi-insulating GaAs as material for optically and electron-beam controlled semiconductor switches have shown that the steady state current is a strongly nonlinear function of both the applied voltage and the radiation intensity. The nonlinear shape of these curves can be influenced over a wide range by doping with suitable deep acceptors or donors, a result which opens the possibility of "tailoring" the materials to meet specific demands. As an example, it is discussed how a current-controlled negative differential conductivity due to Cu-doping can be utilized for a fast (sub-nanosecond) e-beam controlled switch which operates at low dark current, high hold-off voltage and a forward resistance which lies considerably below the lock-on resistance.
The local thermodynamic equilibrium as well as the non-equilibrium properties of crystal
defects in semiconductors are discussed with emphasis on such configurations that allow
for multiple ionization and electronic excitation. A system of rate equations is developed
which describes the temporal change of the occupation numbers of the different energy
levels; it includes the processes of free charge carrier capturing as well as thermal emission.
The results of the investigation can be used, for example, to obtain a more realistic
dynamic description of the occupation of the chromium induced energy levels in gallium arsenide
which play an important role as recombination centers in material for fast photonic
switching.
Photocurrents in the ampere range were generated and optically quenched, respectively, in a new type of semiconductor switch on a nanosecond timescale using two lasers of different wavelength. The semi-insulating switch material is GaAs, doped with silicon and compensated with copper, which forms sets of deep acceptors below the middle of the band gap. The photoconductivity in this system is generated by electron and hole ionization from these centers and subsequent fast hole retrapping. Quenching of the photoconductivity is accomplished by hole ionization from copper centers and subsequent electron-hole recombination. The densities of Cu/Si related defects in the various deep levels determine the switch efficiency and its temporal response to the laser pulses. This distribution is very sensitive to variations in the processing procedure of the switch material. Besides photocurrent measurements, Photo-induced Current Transient Spectroscopic (PICTS) studies have been performed in order to determine the activation energy of the deep centers. Additional informations on the deep-level structure of GaAs:Si:Cu were obtained by cathodoluminescence spectra and decay experiments at cryo-temperatures.
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