Dr. Katie Lutker-Lee Profile

Dr. Katie Lutker-Lee

at TEL Technology Ctr America

SPIE Involvement:

Author

Area of Expertise:

Plasma Etch , Patterning , Dielectric Etch , Atomic Layer Etch

Publications (10)

Proceedings Article | 20 June 2023 Presentation + Paper

Advanced process technologies for photonics waveguide patterning

Erik Geiss, Massud Aminpur, Ryan Sporer, Vijayalakshmi Seshachalam, Padraig Timoney, Brendan O'Brien, Josh LaRose, Eitan Barlaz, Cameron Werner, Katie Lutker-Lee, Luis Fernandez, Brian Pfeifer, Chimaobi Mbanaso, Yan Shao, Angélique Raley

Proceedings Volume PC12499, PC124990B (2023) https://doi.org/10.1117/12.2657729

KEYWORDS: Semiconducting wafers, Waveguides, Etching, Atomic layer deposition, Plasma etching, Plasma, Line edge roughness, Silicon, Vacuum ultraviolet, Film thickness

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Proceedings Article | 30 April 2023 Presentation

Etch optimization for defect reduction of EUV photoresists

Alexandra Krawicz, Katie Lutker-Lee, Sophie Thibaut, Eric Liu, Danilo De Simone, Arnaud Dauendorffer, Yannick Feurprier, Kathleen Nafus, Philippe Bézard, Philippe Foubert, Noriaki Oikawa

Proceedings Volume PC12499, PC1249903 (2023) https://doi.org/10.1117/12.2658971

KEYWORDS: Photoresist materials, Etching, Extreme ultraviolet lithography, Printing, Bridges, Thin film coatings, Stochastic processes, Scanners, Oxides, Metals

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Proceedings Article | 30 April 2023 Presentation

Challenges and innovations in EUV patterning: lithography and etch outlook

Eric Liu, Akiteru Ko, Sophie Thibaut, Katie Lutker-Lee, Steven Grzeskowiak, Alexandra Krawicz, Christopher Cole, Hamed Hajibabaei, Sergey Voronin, Nayoung Bae, Angelique Raley, Lior Huli, Kanzo Kato, David Hetzer, Kathleen Nafus, Seiji Fujimoto, Seiji Nagahara, Satoru Shimura, Shinichiro Kawakami, Congque Dinh, Yuhei Kuwahara, Shigeru Tahara, Masanobu Honda, Tetsuya Nishizuka, Peter Biolsi, Hiromasa Mochiki

Proceedings Volume PC12499, PC124990H (2023) https://doi.org/10.1117/12.2659720

KEYWORDS: Etching, Optical lithography, Lithography, Extreme ultraviolet, Plasma etching, Plasma, Transistors, Semiconducting wafers, Photoresist processing, Photochemistry

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Proceedings Article | 11 November 2022 Presentation

Holistic litho-etch development to address patterning challenges towards high NA EUV

Seiji Nagahara, Arnaud Dauendorffer, Xiang Liu, Tomoya Onitsuka, Hisashi Genjima, Noriaki Nagamine, Yuhei Kuwahara, Yuya Kamei, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Sophie Thibaut, Alexandra Krawicz, Steven Grzeskowiak, Katie Lutker-Lee, Eric Liu, Christopher Catano, Joshua LaRose, Jeffrey Shearer, Lior Huli, Philippe Foubert, Danilo De Simone

Proceedings Volume PC12292, PC122920N (2022) https://doi.org/10.1117/12.2642941

KEYWORDS: Extreme ultraviolet, Optical lithography, Extreme ultraviolet lithography, Etching, Plasma etching, Lithography, Yield improvement, Stochastic processes, Plasma, Photoresist materials

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Proceedings Article | 25 May 2022 Presentation + Paper

Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

Angélique Raley, Lior Huli, Steven Grzeskowiak, Katie Lutker-Lee, Alexandra Krawicz, Yannick Feurprier, Eric Liu, Kanzo Kato, Kathleen Nafus, Arnaud Dauendorffer, Nayoung Bae, Josh LaRose, Andrew Metz, Dave Hetzer, Masanobu Honda, Tetsuya Nishizuka, Akiteru Ko, Soichiro Okada, Yasuyuki Ido, Tomoya Onitsuka, Shinichiro Kawakami, Seiji Fujimoto, Satoru Shimura, Cong Que Dinh, Makoto Muramatsu, Peter Biolsi, Hiromasa Mochiki, Seiji Nagahara

Proceedings Volume 12056, 120560A (2022) https://doi.org/10.1117/12.2613063

KEYWORDS: Plasma etching, Etching, Extreme ultraviolet, Optical lithography, Plasma, Focus stacking software, Semiconducting wafers, Photoresist processing, Extreme ultraviolet lithography, Silicon carbide

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SPIE Journal Paper | 17 June 2021

Line edge roughness reduction for EUV self-aligned double patterning by surface modification on spin-on-carbon and tone inversion technique

Eric Liu, Katie Lutker-Lee, Qiaowei Lou, Ya-Ming Chen, Angélique Raley, Peter Biolsi, Kai-Hung Yu, Gregory Denbeaux

JM3, Vol. 20, Issue 02, 024901, (June 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.2.024901

KEYWORDS: Line edge roughness, System on a chip, Extreme ultraviolet, Plasma, Etching, Lithography, Silicon, Double patterning technology, Line width roughness, Extreme ultraviolet lithography

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Extreme ultraviolet lithography (EUVL) has been adopted into high volume production for advanced logic device manufacturing. Due to the continuous size scaling requirement for interconnect fabrication, EUVL with self-aligned double patterning (SADP) formation has attracted substantial research attention. The current challenge in EUV SADP is the pattern transfer process from lithography to mandrel formation. In this step, the target critical dimension (CD) of the feature needs to shrink by half from the lithography CD during the etch process. The increasing aspect ratio during this etch potentially deteriorates the pattern validity and the line edge roughness (LER). In addition to these challenges, EUVL has a fundamental bottleneck due to stochastic effects, which can lead to device degradation by defect formation and edge placement error (EPE). LER of the line and space pattern is one of the main contributors to EPE. Effective methods of LER reduction in both process and integration are needed in order to reduce pattern variation and boost device performance. In our study, we examine a technique to reduce LER on the EUV SADP line pattern. This technique involves the surface modification on the spin-on carbon (SOC) layer in the patterning stack and tone inversion process. We had found a trend between surface hydrophobicity of the SOC and the EUV SADP LER performance. The condition that increased the hydrophobicity of the SOC resulted in a lower LER performance after tone inversion. The tested conditions include direct current superposition (DCS) function with H2 plasma, fluorocarbon plasma, and the combination of DCS with H2 plasma and trimethylsilane dimethylamine deposition. On 20-nm pitch EUV SADP, this technique shows 26% of LER improvement from lithography to SADP formation. PSD analysis recorded about 6% and 30% of the LER improvement at the correlation length of >200 nm and 200 to 30 nm, respectively. A demonstration of this technique for a further scaling to 15-nm pitch also shows an LER reduction of 30% from lithography to SADP formation.

Proceedings Article | 9 April 2021 Presentation + Paper

Line edge roughness (LER) reduction strategies for EUV self-aligned double patterning (SADP)

Eric Liu, Katie Lutker-Lee, Qiaowei Lou, Ya-Ming Chen, Angélique Raley, Peter Biolsi

Proceedings Volume 11615, 1161506 (2021) https://doi.org/10.1117/12.2582556

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Extreme ultraviolet lithography (EUVL) has been adopted into high volume production for advanced logic device manufacturing. Due to the continuous size scaling requirement for interconnect fabrication, EUVL with self-aligned double patterning (SADP) formation has attracted substantial research attention [1]–[6]. Double patterning techniques in EUVL achieve pitch halving in the final feature by using the spacer defined approach and self-aligned block (SAB) mitigates the block placement error by leveraging etch selectivities and material filling capability. The current challenge in EUV SADP is the pattern transfer process from lithography to mandrel formation. In this step, the target critical dimension (CD) of the feature needs to shrink by half from the lithography CD during the etch process. The increasing aspect ratio during this etch potentially deteriorates the pattern validity and the line edge roughness (LER) [5]. In addition to these challenges, EUVL has a fundamental bottleneck due to stochastic effects which can lead to device degradation by defect formation and edge-placement-error (EPE) [7]–[10]. LER of the line and space pattern is one of the main contributors to EPE. Effective methods of LER reduction in both process and integration are needed in order to reduce pattern variation and boost device performance. In our research, we examine three approaches to reduce LER on the EUV SADP line pattern. This includes photoresist surface smoothing techniques, patterning layer material study, and tone inversion integration. The photoresist surface smoothing techniques involve a specific plasma process on the EUV chemical amplified resist (CAR) to achieve > 15% of improvement on LER from lithography to post etch performance. The patterning layer material study reveals an optimum patterning stack to minimize etch-induced line wiggling and etch selectivity requirements for LER performance. Finally, a first demonstration of EUV SADP tone inversion process integration is presented as a method to provide additional benefits to LER reduction. A detailed analysis of line performance from each processing step will be examined.

Proceedings Article | 22 February 2021 Presentation + Paper

Novel bottom-up organic mandrel growth to enable organic mandrel EUV SADP for sub-5nm node technologies

Katie Lutker-Lee, Emma Richardson, David O'Meara, Angélique Raley

Proceedings Volume 11615, 1161507 (2021) https://doi.org/10.1117/12.2583426

KEYWORDS: Extreme ultraviolet, Etching, Extreme ultraviolet lithography, Semiconducting wafers, Lithography, Line edge roughness, Silicon, Photoresist materials, Double patterning technology

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As EUV direct patterning begins to hit its resolution limit, the need for EUV self-aligned double patterning (SADP) has arisen in order to reach sub-30 nm pitch. Currently, EUV resists suffer from several shortcomings, both in terms of roughness and resist budget. These constraints means using it directly as a mandrel material, as previously done for immersion lithography SADP is nearly impossible. Consequently, standard EUV SADP flows involve the transfer of the resist through a lithography stack and into a hard mandrel material, such as silicon nitride or amorphous silicon.¹ Achieving line edge roughness (LER) and line width roughness (LWR) targets for an EUV SADP hard mandrel is significantly more challenging than for EUV direct print since the etch process needs to target a post etch CD of about half that of the lithographic CD. This aggressive shrink requirement usually involves degradation in roughness driven by high aspect ratios. To circumvent these issues, we have developed a new bottom up organic mandrel growth process, whereby the EUV resist can be grown to a height compatible with a resist mandrel SADP flow, while the roughness is improved and the critical dimension is controlled. This bottom up mandrel growth process is performed in an etch chamber and can therefore be easily coupled with other process steps. The mandrel height and critical dimensions can be easily tuned from the incoming lithography by changing the deposition and trim step times of the process. We have shown that this bottom-up grown mandrel can withstand typical ALD spacer process deposition. After spacer open, the organic material can be easily removed through an in-situ ash process before opening the underlayer. This integration will allow for the removal of the organic planarizing layer in the lithography stack, reducing the stack complexity, while also eliminating one of the major contributors to wiggling in the typical hard mandrel patterning scheme. In this paper, the performance of this new integration scheme was benchmarked against a more standard SADP flow. The roughness performance post mandrel formation and post spacer deposition for this new scheme is significantly improved over our standard EUV SADP baseline using a standard EUV SADP flow.

Proceedings Article | 6 April 2020 Presentation + Paper

Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features

Ashim Dutta, Jennifer Church, Joe Lee, Brendan O’Brien, Luciana Meli, Chi Chun Liu, Saumya Sharma, Karen Petrillo, Cody Murray, Eric Liu, Katie Lutker-Lee, Qiaowei Lou, Chris Cole, Angélique Raley, Akiteru Ko, Subhadeep Kal, Jake Kaminsky, Aelan Mosden, Henan Zhang, Shan Hu, Lior Huli, Naoki Shibata, Dave Hetzer, Chia-Yun (Sharon) Hsieh

Proceedings Volume 11323, 113230V (2020) https://doi.org/10.1117/12.2551727

KEYWORDS: Line edge roughness, Lithography, Etching, Amorphous silicon, Extreme ultraviolet, Oxidation, Extreme ultraviolet lithography, Optical lithography, Scanning electron microscopy, Critical dimension metrology

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Proceedings Article | 17 March 2015 Paper

Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)

Yannick Feurprier, Katie Lutker-Lee, Vinayak Rastogi, Hiroie Matsumoto, Yuki Chiba, Andrew Metz, Kaushik Kumar, Genevieve Beique, Andre Labonte, Cathy Labelle, Yann Mignot, Bassem Hamieh, John Arnold

Proceedings Volume 9428, 94280F (2015) https://doi.org/10.1117/12.2086519

KEYWORDS: Etching, Optical lithography, Extreme ultraviolet, Plasma, Plasma etching, Photomasks, Photoresist processing, Line edge roughness, Line width roughness, Extreme ultraviolet lithography

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Showing 5 of 10 publications

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