For 45 nm node and beyond, the alternating phase-shift mask (alt. PSM), one of the most expected resolution
enhancement technologies (RET) because of its high image contrast and small mask error enhancement factor (MEEF),
and the binary mask (BIM) attract attention. Reducing CD and registration errors and defect are their critical issues. As
the solution, the new blank for alt. PSM and BIM is developed. The top film of new blank is thin Cr, and the antireflection
film and shielding film composed of MoSi are deposited under the Cr film.
The mask CD performance is evaluated for through pitch, CD linearity, CD uniformity, global loading, resolution and
pattern fidelity, and the blank performance is evaluated for optical density, reflectivity, sheet resistance, flatness and
defect level. It is found that the performance of new blank is equal to or better than that of conventional blank in all
items. The mask CD performance shows significant improvement.
The lithography performance of new blank is confirmed by wafer printing and AIMS measurement. The full dry type
alt. PSM has been used as test plate, and the test results show that new blank can almost meet the specifications of pi-0
CD difference, CD uniformity and process margin for 45 nm node. Additionally, the new blank shows the better pattern
fidelity than that of conventional blank on wafer. AIMS results are almost same as wafer results except for the
narrowest pattern. Considering the result above, this new blank can reduce the mask error factors of alt. PSM and BIM
for 45 nm node and beyond.
Chromeless Phase Lithography (CPL) is one of resolution enhancement technologies (RET) for 65nm node and beyond. CPL has various advantages such as no necessity of double exposure, and small pattern displacement and CD error caused by the intensity imbalance. The high resolution lithography can be expected with the combination of high NA and off-axis illumination (OAI) in 193nm lithography. It is known that CPL can flexibly change structure through gate pitch. There are various kinds of structure, such as pure CPL, Zebra, Rim, and Stripe. And there are also various kinds of scattering bar depending on the gate pitch. In this paper, we estimated normalized image log-slope (NILS), mask error enhancement factor (MEEF), depth of focus (DOF) and phase shift depth for each CPL structure by rigorous 3D mask electro-magnetic field (EMF) simulation on mask topographies. And it was found that Zebra and Stripe can improve NILS, and Stripe is most effective to improve MEEF for narrow pitch. There is no large difference in DOF between all structures, and DOF for all structures with wide pitch can be expanded by the addition of chrome scattering bar. We evaluated the impact of phase shift depth and found that the optimal phase shift depths of all structures are larger than 180degrees. The improvement of mask-making accuracy becomes more important to achieve better mask pattern resolution. Therefore, we focused on the defects of the sub-resolution chrome feature and chrome scattering bar. It was found that the defects of sub-resolution chrome feature have big influences on the lithography performance. And the defects of scattering bars become more sensitive with closer to the main feature.
The phase shift mask (PSM) is one of the most effective approaches to improve ArF lithography performance. Recently, the quartz dry etching technology plays an important role to fabricate the PSM, such as space bias type Alternating (Alt.) PSM and chrome-less phase lithography (CPL) mask. The quartz etching profiles seems to be affected the lithography performance. In this paper, preliminary, we evaluate the nominal influences of quartz profile by rigorous electromagnetic field simulation. Then influence of the quartz profile is investigated by measuring the real masks. In this experiment, we intentionally fabricate Alt. PSM and CPL masks with the tapered side-wall and deeper micro-trench. Lithography performances of the real masks are measured by the aerial image measurement system (AIMS fab193). We compare the result of AIMS with simulation. We investigate the AIMS measurement well corresponds to the simulation. Side-wall angle and corner rounding strongly affect the lithography performance. However, micro-trench doesn’t affect a lot.
The alternating phase-shift mask (alt. PSM) is one of the most effective approaches to improve a resolution of the 65nm logic gate structure in ArF lithography. Previously we have studied the optimization of alt. PSM in 180nm gate-pitch. In this study, we evaluated various alt. PSM in the case of 160nm gate-pitch. Using a rigorous electro-magnetic field simulation of light scattering in 3D mask topographies, we evaluated CD difference between π-phase and 0-phase space size (the π-0 CD difference), resist CD through pitch and normalized image log-slope (NILS). The parameters for our simulation were mask structure (shallow trench depth (ST), undercut size (UC), space bias, Chrome (Cr) CD, pitch, phase shift depth) and ArF exposure condition (NA, sigma, defocus). From the results of simulation, it turned out that single trench structures with UC and/or space bias showed the good intensity balance through defocus. We compared the simulation results with the AIMS fab193 (Carl Zeiss) results and found there was no large difference. The combination of UC and space bias could be chosen as suitable structure for 160nm gate-pitch.
To extend 193nm lithography to 65nm node devices, alternating phase shift mask structure were optimized. Both single trench and dual trench structure was evaluated. The optimization was performed by rigorous electro-magnetic field simulation of light scattering in 3D mask topographies. Evaluation masks were fabricated according to the simulation results, and the mask image was evaluated by using AIMS fab193 (Carl Zeiss). Prior to the optimization, limitation of shallow trench depth and undercut size was considered from the standpoint of “mask making”. Maximum undercut size was defined in order to prevent the Cr pattern peeling in cleaning process. In the optimized structure, CD difference between adjacent patterns with 0-space and π-space is within ±10nm wiht 300nm focus margin for different pattern pitches.
For the latest photomask fabrication, critical dimension (CD) control is required more for ArF lithography. To satisfy the requirement, Alternating Phase-Shifting Mask (Alt.PSM) is expected to be the most effective approach for resolution enhancement. We investigated the optimization of shifter structure and evaluated phase defect detectability for 130 to 100nm node ArF Alt.PSM. Considering the process and defect control, shifter trench type is the most popular approach. However, in order to achieve smaller CD on reticle, dual trench type becomes also necessary. Therefore, we investigated the performance of the two types of shifter structure, and we compared the optical characteristics. On the other hand, Using test reticles contained programmed phase defects of various shape and size, phase defect printability was analyzed with the Aerial Image Measurement System, MSM193, and phase defect detectability was evaluated with some inspection tools. As a result, the manufacturing technology of ArF Alt.PSM for 100nm node was established.
Alternating Phase-Shift Mask (Alt-PSM) is one of the key technologies for 0.15 micrometer or below rule device fabrication. But it is not yet widely utilized because of difficulty on phase controllability and defect controllability. Through more than 7 years at our commercial base operation and feedback from customers, we have improved our Alt-PSM both on its performance on wafer resist image and defect minimization. We have focused on the two elements, defects detection and repair, that made it difficult to control defect quantity on Alt-PSMs. In this paper, we describe results of experiment and optimization method that aims to assure zero defect on Alt-PSM for DUV lithography. We prepared evaluation plates. The plates contain series of programmed quartz defect on 0.6 micrometer line & space, each has phase errors of 60, 120 and 180 degrees at KrF wavelength. We used several latest models of inspection tools to evaluate phase shift quartz defect detectability, which are KLA353UV, STARlight, 9MD84SR(i). Micrion8000 was used as the repair tool. MSM-100/AIMS was used to evaluate wafer CD error of defect area before and after repair. As results, we found that inspection by short wavelength, especially by 9MD84SR(i), was effective for detection of phase shift defects, and that if this method were combined with STARlight inspection, detectability of the phase shift defect would be improved. With combination of this inspection method and our FIB repair, which is optimized for premeasured height of each phase shift defect by use of AFM, we would be able to supply zero defect Alt-PSMs for 0.15 micrometer design rule devices.
The halftone phase shift mask (PSM) gives a significant improvement on DOF for hole pattern printing on wafer. However, we need to be careful when we use it on other patterns such as line and space or patterns surrounded by bright field, because sub-peak effect could cause deterioration of those patterns when they are printed on wafer. Toppan presents a new structure in which Cr film is partially placed on the half tone surface. With this structure, so called Tri-tone PSM, we can block harmful light transmission for non-hole patterns, while keeping the full characteristics of PSM effect on targeted patterns. This structure could also prevent the line shortening problem. Using this structure we can get good printability on smaller geometry without using optical proximity correction (OPC) patterns (serif, etc.). Of course this method can offer a perfect shielding of the opaque ring which prevent the wafer damage caused by light leakage. By using this Tri-tone structure, the application of half tone PSM, which is so far limited to hole patterns, would be extended to line patterns.
Attenuate phase shift masks have been developed for practical use because there are less limitations on the design, and mask defect repairs are easier. However, phase shift mask manufacturing technology improvement is needed not only for control of phase shift or transmission, but also higher accuracy and more precise patterns such as KrF application or for 4X reticle applications. This report shows the manufacturing method of the MoSiON attenuate phase shift mask with Cr border and its quality encourages its evaluation as a promising technique for finer patterns.
We have been developing the technology for phase shift masks since 1991 in order to
supply the reticles for 64 MDRAM generation and after. We are still developing both the
alternative and embedded types fori-line.
The embedded type is suitable for ASIC and contact hole. Now, we are reaching an
adequate supply of embedded type PSMs for practical use.
Currently the embedded types is relatively popular because the burden on designing is
small, the process is comparatively short, and defect repair is easier.
Alternative type phase shift masks have a great effect on the improvement of resolution and DOF. Through the practical use of them, it is also possible for the i-line to have a 0.3 micrometers design lithography. However, it is yet to be used on a practical level due to the lack of the capability to repair shifter defects, and the difficulty in meeting certain required wafer characteristics. Embedded type phase shift masks are supposed to be able to reach a production use level more easily. This is because the embedded type does not require a transparent shifter layer and defects may therefore by repaired more easily. Toppan defines alternative type phase shift masks as essential technology for 0.3 micrometers lithography, and the embedded type as a technology necessary for use in the early production of 0.4 micrometers - 0.35 micrometers design rule and asic. We would like to introduce our updated improvements of alternative phase shift mask performance, and embedded phase shift mask patterning technique.
This paper reports on a 50 inch diagonal autostereoscopic full-color 3-D TV display system that requires no special glasses and uses four color TV cameras with a 3-D color viewfinder, a high-resolution liquid crystal (LCD) video projector, and a specially designed lenticular screen. The resulting 3-D image is of high resolution, exceptionally bright and vividly three- dimensional. The key technologies supporting this 3-D TV display system are a 3-D image display method, a newly developed HDTV LCD color video projector with incredibly high resolution (4.5 million pixels), and a new type of lenticular screen with a `hollow structure.' Images from four color TV cameras are recorded by four professional VTRs with a time code signal, and are multiplexed, pixel by pixel, to form a vertical stripe image projected by the single LCD video projector behind the lenticular screen. Using this 3-D image display method, optical alignment between the projected stripe image and lenticular screen is both accurate and easily attained. The new lenticular screen with hollow structure has resulted in a reduced total screen weight and thickness with increased light transmittance.
The authors developed a high-performance magnetic and optical complex sensor unit
used for applications requiring high security, such as discrimination of notes,
cards, etc.
This new sensor unit has a sensor head constructed of a magnetic head and a
reflective-type photo sensor embedded in a small gap of the magnetic head. And
enables correct pattern recognition by optical information obtained together with
conventional magnetic information.
Traveling this sensor head in contact with the surface of the subject of discrimination
can detect difference of reflectance at the same time as the magnetic
detection at the same point of place.
As a result it became possible to discriminate for example, bills of any size in
any country.
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