Prof. Kentaro Nagamatsu Profile

Prof. Kentaro Nagamatsu

at Tokushima Univ

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Author

Publications (7)

Proceedings Article | 5 March 2022 Poster

Improvement of crystal orientation in AlN with controlled inversion domain

Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu

Proceedings Volume PC12001, PC120011C (2022) https://doi.org/10.1117/12.2607577

KEYWORDS: Aluminum nitride, Sapphire, Light emitting diodes, Oxygen, Diffusion, Deep ultraviolet, X-rays, Ultraviolet light emitting diodes, Polarization, Diffraction

Proceedings Article | 5 March 2022 Poster

Threshold temperature in annihilation radius of dislocation for AlN

Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu

Proceedings Volume PC12001, PC120011B (2022) https://doi.org/10.1117/12.2607569

KEYWORDS: Aluminum nitride, Aluminum, X-rays, Vapor phase epitaxy, Ultraviolet light emitting diodes, Sapphire, Luminous efficiency, Light emitting diodes, Interfaces, Gallium nitride

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Proceedings Article | 27 October 2021 Paper

Design of AlN-subwavelength grating for deep ultraviolet wavelength reflector operating at 244 nm of wavelength

Yuusuke Takashima, Atsuki Sasada, Kentaro Nagamatsu, Masanobu Haraguchi, Yoshiki Naoi

Proceedings Volume 11926, 1192618 (2021) https://doi.org/10.1117/12.2616175

KEYWORDS: Deep ultraviolet, Reflectivity, Reflectors, Aluminum nitride, Polarization, Refractive index, Optical design, Finite-difference time-domain method, Ultraviolet radiation, Optical components

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Proceedings Article | 8 March 2014 Paper

Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers

Masao Kawaguchi, Osamu Imafuji, Kentaro Nagamatsu, Kazuhiko Yamanaka, Shinichi Takigawa, Takuma Katayama

Proceedings Volume 8986, 89861K (2014) https://doi.org/10.1117/12.2037484

KEYWORDS: Vertical cavity surface emitting lasers, Gallium nitride, Quantum efficiency, Reflectivity, Optical resonators, Silica, Refractive index, Mirrors, Dielectrics, Quantum wells

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Proceedings Article | 12 February 2010 Paper

Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

Hiroshi Amano, Kensuke Nagata, Kentaro Nagamatsu, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Proceedings Volume 7617, 761702 (2010) https://doi.org/10.1117/12.848616

KEYWORDS: Switching, Focus stacking software, Vapor phase epitaxy, Light emitting diodes, Thermodynamics, Solids, External quantum efficiency, Epitaxy, Gallium nitride, Blue light emitting diodes

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Proceedings Article | 17 February 2009 Paper

Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes

H, Amano, K. Nagamatsu, K. Takeda, T. Mori, H. Tsuzuki, M. Iwaya, S. Kamiyama, I. Akasaki

Proceedings Volume 7216, 72161B (2009) https://doi.org/10.1117/12.808381

KEYWORDS: Aluminum nitride, Ultraviolet radiation, Magnesium, Mirrors, Gallium nitride, Dielectrics, Dielectric mirrors, Sapphire, Multilayers, Semiconductor lasers

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Proceedings Article | 6 February 2007 Paper

Comparison of the simulation and experiments of the nitride-based UV light emitting diodes

K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh

Proceedings Volume 6468, 64680R (2007) https://doi.org/10.1117/12.717174

KEYWORDS: Gallium, Aluminum nitride, Aluminum, Gallium nitride, Epitaxial lateral overgrowth, Light emitting diodes, Ultraviolet light emitting diodes, Computer simulations, Ultraviolet radiation, Sapphire

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Showing 5 of 7 publications

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