Dr. Kingsley Aisaboluokpea Ogudo Profile

Dr. Kingsley Aisaboluokpea Ogudo

Senior Lecturer Researcher at Univ of Johannesburg

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Author

Area of Expertise:

Macro and Micro-electronics , Basic and Advance electronics , Mathematics , CMOS fabrication and Technology , Physics , Si LED CMOS Opticcal waveguiding.

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Lecture basic and advance electronics,research in CMOS technology and design and optical waveguiding in Si CMOS structures.CMOS integrated circuitry design.Optical fibre communication,optical fibre design and technology.Optical CMOS systems.Lecture basic electrical engineering science. Intrested in Si CMOs micro-electronics. D-tech student at Tshwane University of Technologu (TUT) South Africa and PhD student at the Universite Paris Est-ESIEE ,France.

SPIE Journal Paper | 28 December 2022

Realization of GHz band integrated optical links in a radio frequency Si Ge bipolar process operating at 650 to 850 nm wavelength

Lukas Snyman, Kingsley Ogudo, Zerihun Tegnege, Jean-Luc Polleux, Anne-Laure Billabert, Herzl Aharoni

OE, Vol. 61, Issue 12, 125109, (December 2022) https://doi.org/10.1117/12.10.1117/1.OE.61.12.125109

KEYWORDS: Silicon, Waveguides, Integrated optics, Radio optics, Germanium, Light emitting diodes, CMOS technology, Silicon nitride, Sensors, Design

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Proceedings Article | 24 January 2019 Paper

Edge-emitting Si avalanche-mode LED integrated into a SiGe RF bipolar technology: optical power emission characterization with optical probe mapping technique

Kingsley Ogudo, Jean-Luc Polleux, Lukas Snyman

Proceedings Volume 11043, 1104309 (2019) https://doi.org/10.1117/12.2502515

KEYWORDS: Light emitting diodes, Silicon, Waveguides, Sensors, Integrated optics, Light, Wafer-level optics, Optical power meters, Optical design, Optical testing

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A novel silicon SiGe edge light emitting diode (SiGe ELED) was realized in standard RF bipolar SiGe technology process that uses a p-n junction either in reverse and forward bias mode configurations. A vertical cubical columnar SiGe/Si HBT like structure was used. The light emitting process in the reverse bias mode is by means of an avalanche breakdown process. The reverse biased device emits light in the wavelength range of 450–650 nm, with operating voltage and current of 1.3 V and 8 mA respectively, while the forward biased mode emitted at about 850nm. In the forward biased mode, it operates in a two junction mode with the first n+p junction emitting low energy electrons into a lowly doped p region. The SiGe ELED is intended to be implemented in an optical interconnect with an external detector via a lateral optical waveguide coupling. Because the LED emit in a broad spectrum, localizing the emission source point is of paramount importance. Two techniques were used to attempt to realise this objective. Optical Probe measurement and Optical Power Meter Mapping technique. Localization of the emission source point process was performed through scanning a lensed fiber coupled to an optical power meter, over the edge surface profile of the diced device. The side edge of the diced device structure was interface with the lens fibre in other to ascertain the maximum emission point and the nature of light emitting process. This was done using a smooth dicing of the LED device close to its emitting edge and scanning its edge surface through a multimode lensed fiber coupled to an optical power meter. The mapping area scanned was 40μm x 40μm and 60μ x 60μ to localize the emitting source point region. A total emitted optical power as measured from the Led was 2.86nW as measured by the optical power meter connected to the lensed optical fibre. This was confirmed with a light-current-voltage (LIV) characteristics power measurement curve obtained from the device by means of the edge mapping techniques. A rough estimated localization of the source point was approximately 0.3mW optical power with a current of 8mA was realized with this technique. These results can be used to design accurate electro-optical conversions in integrated photonic circuitry as well as designing well coupled optical interconnects from the chip to the environment.

Proceedings Article | 24 January 2019 Paper

Light emission from Si avalanche mode LEDs as a function of E field control, impurity scattering, and carrier density balancing

Zhaotong Zhang, Kingsley Ogudo, Hongliang Sun, Lukas Snyman, Kaikai Xu

Proceedings Volume 11043, 1104307 (2019) https://doi.org/10.1117/12.2502224

KEYWORDS: Silicon, Scattering, Electrons, Light emitting diodes, Light scattering, Control systems, Integrated optics, Photonics, Ionization

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Proceedings Article | 6 November 2015 Paper

Light emission in silicon: from device physics to applications

Kaikai Xu, Ning Ning, Kingsley Ogudo, Jean-Luc Polleux, Qi Yu, Lukas Snyman

Proceedings Volume 9667, 966702 (2015) https://doi.org/10.1117/12.2199841

KEYWORDS: Silicon, Electrons, Electro optics, Photons, Light emitting diodes, Optical interconnects, Photonic integrated circuits, Integrated circuits, Diodes, Chemical species

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Proceedings Article | 23 June 2014 Paper

Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology

Kingsley Ogudo, Lukas Snyman, Jean-Luc Polleux, Carlos Viana, Zerihun Tegegne

Proceedings Volume 9257, 92570I (2014) https://doi.org/10.1117/12.2064737

KEYWORDS: Silicon, Waveguides, Sensors, Light emitting diodes, CMOS technology, Modulation, CMOS sensors, Germanium, Oxides, Integrated optics

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Proceedings Article | 8 March 2014 Paper

High-intensity 100-nW 5GHz silicon avalanche LED utilizing carrier energy and momentum engineering

Lukas Snyman, Jean-Luc Polleux, Kingsley Ogudo, Carlos Viana, Sebastain Wahl

Proceedings Volume 8990, 89900L (2014) https://doi.org/10.1117/12.2038195

KEYWORDS: Silicon, Electrons, Light emitting diodes, Scattering, Sensors, Photonics, Waveguides, Doping, Ionization, Chemical species

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Proceedings Article | 8 March 2014 Paper

Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology

Kingsley Ogudo, Lukas Snyman, Jean-Luc Polleux, Carlos Viana, Zerihun Tegegne, Diethelm Schmieder

Proceedings Volume 8991, 899108 (2014) https://doi.org/10.1117/12.2038079

KEYWORDS: Silicon, Waveguides, Sensors, Light emitting diodes, CMOS technology, Modulation, CMOS sensors, Germanium, Integrated optics, Oxides

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SPIE Journal Paper | 6 March 2013 Open Access

Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems

Kingsley Ogudo, Diethelm Schmieder, Daniel Foty, Lukas Snyman

JM3, Vol. 12, Issue 01, 013015, (March 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.1.013015

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Proceedings Article | 17 January 2011 Paper

Development of a 0.75 micron wavelength, all-silicon, CMOS-based optical communication system

Lukas Snyman, Kingsley Ogudo, Daniel Foty

Proceedings Volume 7943, 79430K (2011) https://doi.org/10.1117/12.873202

KEYWORDS: Silicon, Waveguides, CMOS technology, Light emitting diodes, Sensors, Telecommunications, Oxides, Optical communications, CMOS sensors, Wave propagation

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Proceedings Article | 24 February 2009 Paper

Application of Si LEDs (450nm-750nm) in CMOS integrated circuitry-based MOEMS: simulation and analysis

Lukas Snyman, Kingsley Ogudo, Monuko du Plessis, Gustav Udahemuka

Proceedings Volume 7208, 72080C (2009) https://doi.org/10.1117/12.808551

KEYWORDS: Silicon, Light emitting diodes, Integrated circuits, Integrated optics, CMOS technology, Integrated circuit design, Sensors, Oxides, Microopto electromechanical systems, CMOS sensors

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