Investigations of stimulated recombination processes and reasons of output optical power saturation at superhigh
pump levels (up to 0.1 MA/cm2) of semiconductor lasers based on wide variety of quantum well heterostructures (&lgr;=980-
1900 nm) are presented for the first time.
Power and spectral characteristics of Fabry-Perot semiconductor lasers based on at high excitation levels in
pulsed lasing mode (200 A, 100 ns, 10 kHz) are investigated and double-band lasing is reached.
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