In recent years major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCP). DSA is now widely regarded as a leading complementary patterning technique for future node integrated circuit (IC) device manufacturing and is considered for the 7 nm node. One of the most straightforward approaches for implementation of DSA is via patterning by graphoepitaxy. In this approach, the guiding pattern dictates the location and pitch of the resulting hole structures while the material properties of the BCP control the feature size and uniformity. Tight pitches need to be available for a successful implementation of DSA for future node via patterning which requires DSA in small guiding pattern CDs. Here, we show strategies how to enable the desired CD shrink in these small guiding pattern vias by utilizing high χ block copolymers and/or controlling the surface properties of the template, i.e. sidewall and bottom affinity to the blocks.
Extreme ultraviolet (EUV) lithography is one of the most promising candidates for next generation
lithography (NGL) that can print 22nmhp and beyond. In order to implement EUV technology, resist is one of
the critical items that require significant improvement in overall performance. In order to achieve these
improvements, many research groups are developing new materials such as molecular glass (MG) polymer
bound photo-acid generator (PAG) high quantum yield PAG, sensitizer and high absorption resin.
In this study, we focused on innovative PAG materials and correlated PAG acid diffusion length to
lithography performance. As a result, new resist designs with improved resolution, LWR,
sensitivity are reported.
In order to achieve targeted resist performance for EUV in practical applications, we have developed new materials such
as molecular glass (MG), PAG, and acid amplifiers (AA). Protected NORIA, a molecular glass, was examined for
extending resolution limits. The resist with protected NORIA showed 22 nm hp resolutions under EUV exposure. PAG
acid diffusion effect on LWR was also investigated. It was found that acid diffusion control was one of the most
important factors for LWR improvement. To improve sensitivity, application of AA (acid amplifier) was investigated.
The resist with AA gained 25% sensitivity improvement over the original formulation. Elemental technologies for major progress of EUV resist were made.
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