Conventional doping of crystalline Si via ion implantation results in a stochastic distribution of doped regions in the x-y plane along with relatively poor control over penetration depth of dopant atoms. As the gate dimensions get to 10 nm, the related device parameters also need to be scaled down to maintain electrical activity. Thus highly doped abrupt, ultra-shallow junctions are imperative for source-drain contacts to realize sub-10 nm transistors. Uniform ultra-shallow junctions can be achieved via monolayer doping, wherein thermal diffusion of a self-limiting monolayer of dopant atomcontaining organic on Si surface yields sub-5 nm junctions. We have extended the use of organic dopant molecules in the monolayer doping technique to introduce a new class of spin-on polymer dopants. In effect, these new spin-on dopants offer a hybrid between the monolayer doping technique and traditional inorganic spin-on dopants. We have been able to uniformly introduce p- and n-type dopants with doping efficiencies comparable to the monolayer doping technique. Control over junction depth can be easily achieved via optimizing annealing temperature and time. Concurrently, sequestering the dopant precursors within the cores of block copolymer micelles allows us to achieve precise control over the spatial positions of dopant atoms in all three dimensions owing to the high periodicity of block copolymer domains on the 10-100 nm length scale.
We demonstrate manipulation of nonlinear vibration of graphene mechanical resonator (G-MR) optically by photothermal effects of laser. Different photothermal effects are induced by combining of scattering light and different standing waves of light, which have different effects on nonlinear vibration. Experimental results indicate that nonlinearity is suppressed or promoted for each photothermal effects without almost changing its amplitude. These changes cannot be explained by conventional nonlinear vibration that the nonlinearity increases with increasing amplitude. To reveal the principle of the modulation, we proposed novel vibration model including photothermal effects in nonlinear vibration. Numerical calculation from the model well fits experimental results and revealed the principle. We believe that these technics of controlling nonlinear vibration open the further applications of G-MR.
Transition metal dichalcogenide such as MoS2 is expected as high performance nano-electro-mechanical devices due to their unique electrical, optical and mechanical properties. One can expect that the combination of these properties are efficient to develop the novel functional devices. Here, we demonstrates the amplitude control of resonance characteristics of a cantilevered MoS2 on the planar substrate, which is actuated by electrostatically. The AC and DC bias voltage dependences of the vibration amplitudes are well explained by the simplified model under linear elastic regime. Moreover, we demonstrate the optical manipulation of the vibration amplitude at the resonance. Under the irradiation of strongly absorbed light by MoS2, the vibration amplitude is successfully manipulated by the laser intensity change.
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