The heterojunction of polycrystalline Li-doped IrO2, grown by pulsed laser deposition, and (100)-oriented Si is investigated to develop CMOS-integrated compact optoelectronics. The grown films exhibited p-type conductivity with a bandgap value of around 3.15 eV. Energy-dispersive x-ray spectroscopy mapping confirmed the films’ composition. The hetero-integration of wide-bandgap metal oxides on Si extends the scalability of CMOS-compatible optoelectronics and power electronics, paving the way for enhanced optoelectronic processes and miniaturized photonic circuits.
A Si-integrated oxide-nitride deep-ultraviolet photodetector with remarkable photosensitivity is demonstrated. The proposed device topology is realized through the disordered nucleation of β-Ga2O3 crystals on monocrystalline TiN interlayers forming an oxide-nitride vertical heterostructure stack housed on a Si substrate. Spectral responsivity levels of about 240 A/W at illuminating power density levels of around 7.40 μW/cm2 were achieved.
Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ε-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction measurements and transmission electron microscopy images confirmed a β-Ga2O3/ε-Ga2O3 polymorphic heterostructure with rocking-curve widths of 1.4° (β-Ga2O3 (¯603)) and 0.6° (ε-Ga2O3 (006)). The crystallographic orientation relationships between c-plane sapphire and the heterogeneously nucleated ε-Ga2O3 buffer layer, as well as between the ε-Ga2O3 and β-Ga2O3 heterogeneous layers, were determined. Our study will aid in developing novel deep-ultraviolet optoelectronic devices, such as solar-blind and metal-insulator-semiconductor deep-ultraviolet photodiodes.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.