The impact of carrier trapping at the substrate/buried oxide interface on the LF noise characteristics of Fully Depleted
MOSFETs has been calculated. The channel LF noise analysis based on carrier number fluctuation approach has been
extended to include charge variations at the substrate/buried oxide interface. The impact of fluctuations of substrate/BOX
interfacial charge on the channel drain current has thereby been studied as a function of gate bias. The results suggest
that substrate doping concentration, buried oxide thickness and dielectric material have non-negligible effect on the
contribution of the substrate interface noise to the total device noise. To our knowledge, the contribution of this noise to
the total noise of a FD-SOI device has never been studied.
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