Ms. Lili Xie Profile

Lili Xie

at Tsinghua Univ

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Proceedings Article | 30 August 2017 Presentation + Paper

A GaAs-based up-converter for mid-infrared detection utilizing quantum cascade transport

Zhibiao Hao, Lili Xie, Chao Wang, Yaqi Liu, Lai Wang, Jian Wang, Bing Xiong, Changzheng Sun, Yanjun Han, Hongtao Li, Yi Luo

Proceedings Volume 10403, 1040309 (2017) https://doi.org/10.1117/12.2273105

KEYWORDS: Infrared technology, Infrared imaging, Infrared detectors, Infrared radiation, Semiconductors, Photons, Mid-IR, Infrared detection, Staring arrays, Near infrared

Read Abstract +

The next generation infrared (IR) detection technology demands for very-large-format focal plane arrays (FPAs) with high performance. Semiconductor up-converters can convert IR photons to near-infrared (NIR) photons, and can be potential candidates for large-format IR imaging since the mechanical bonding with the read-out circuits can be avoided. However, previously reported up-converters and corresponding up-conversion systems suffer from low detectivity because of the trade-off between responsivity and dark current. To solve this issue, a cascade infrared up-converter (CIUP) is demonstrated in this work. Based on a quantum cascade transport mechanism, high IR responsivity is achieved while the dark current is maintained fairly low. A 4-μm InGaAs/AlGaAs CIUP has been fabricated, and both the CIUP and up-conversion system are under background-limited infrared performance (BLIP) regime below 120 K. The upconversion efficiency is 2.1 mW/W at 3.3 V and 78 K. Taking shot noise as the main noise in the up-conversion system, the BLIP detectivity of the system is 2.4×10⁹ Jones at 3.3 V and 78 K, higher than the semiconductor up-converters at similar wavelengths reported so far. To further improve the CIUP performance, an AlInP hole-blocking layer is introduced taking place of the AlAs layer. AlInP/GaAs has larger valence band discontinuity than AlAs/GaAs, showing the advantage of tightly confining injected holes into the emission quantum well. By adopting the AlInP hole-blocking layer, the quantum efficiency and detectivity of the up-conversion system can be enhanced.

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