By eliminating one prismatic face and adding four second pyramid faces, the horizontally oriented DKDP crystal can improve the cutting efficiency for tripler in ICF. To optimize the flow conditions for the growth of the horizontally oriented DKDP crystal, a stirring paddle is add above the crystal in the growth tank. With different rotation direction, position and size of the stirring paddle, the distributions of shear force on the crystal surface are compared by using numerical simulations. But the shear stress at center of the up face of the crystal is too small to ensure high quality crystal. However, the numerical simulation results do provide the understanding and guidance for the growth of large size DKDP crystals that can increase cutting efficiency of tripler. Currently, a cuboid DKDP crystal without a pyramidal sector was rapidly grown in SIOM. The higher the cuboid DKDP crystal, the cutting yield is more efficient for the tripler. And the aperture of the biggest triplers is approximately equal to the cross-section of the cuboid DKDP crystal. The fluence corresponding to 50% laser-induced damage (LID) probability of the cuboid DKDP crystal was 13.4 J/cm2. The crystal grown using this method establishes the possibility of growing large cuboid DKDP crystals. Currently, rapid growth of cuboid DKDP crystals of more than 40 cm is underway.
CdZnTe (CZT) is proved to be a perfect material during the fabrication of detectors for X-ray and Gamma ray. However, Te inclusion is one of the main defects in CZT crystal which influences the electrical and spectroscopic properties of the detectors. This paper presents optimization of hot zone design and operating conditions by direct mixed solution growth (DMSG) method in order to reduce the formation of Te inclusion. The growth temperature is 890°C and the growth rate is 5mm/day. With the temperature gradient increased from 20K/cm to 40K/cm, the number of Te inclusion is reduced sharply while the size of Te inclusion is still large. When accelerated crucible rotation technique (ACRT) is introduced, the size of Te inclusion is reduced significantly. Large-size Te inclusion almost disappears under IR imaging. The density of Te inclusion which is larger than 1×104cm3. The resistivity of the as grown crystal is higher than 1010Ωxcm. At last, the influence of ACRT sequences on Te formation is discussed.
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