This article mainly studies the current voltage (IV) characteristics of Quantum Well Infrared Photo-detectors, especially the influence of temperature on their performance, as well as the characteristics related to photocurrent and dark current. We measured the IV curves at different temperatures and conducted comparative studies to reveal the differences in the behavior of quantum well devices under photoexcitation and non photoexcitation conditions, in order to gain a deeper understanding of their performance characteristics. Finally, we investigated the response of quantum well devices to different blackbody temperatures and fitted the dark current using the IV curve, which was compared with the actual measured dark current. The results show that the fitted dark current is slightly larger than the actual measured dark current. Through these studies, we can comprehensively understand the IV characteristics of quantum well devices under different temperature and lighting conditions, providing strong support for their optimization and control in various applications. These research results are of great significance for the design and engineering applications of QWIP.
Quantum well infrared photodetectors (QWIPs) have natural advantages, such as high material maturity and good uniformity. But its low quantum efficiency is often criticized as a drawback. The quantum well optical coupling structure is one of the key factors affecting the quantum efficiency of quantum well detectors. This article mainly focuses on the impact of the optical coupling structure of quantum well detectors on detector wavelength, coupling efficiency, and other aspects. We have established an optical coupling structure model for quantum well detectors, mainly consisting of three different angles of structure structures: 45 degrees, 62 degrees, and 90 degrees periodic two-dimensional diffraction gratings. The 3D-FDTD simulation method was used to simulate the optical coupling structure of quantum well detectors, and the performance indicators of the three structures, such as response wavelength and coupling efficiency, were compared. At the same time, simulations were conducted on different angles of periodic two-dimensional diffraction gratings. It can be seen that as the grating angle increases, the response spectrum width widens, but the amplitude of the response decreases.
GaN p-i-n ultraviolet photodetector for i-line lithography machines were fabricated. GaN detectors are excellent choice to monitor the uniformity and change degree of the beam energy for their high sensitivity, low noise and strong radiation resistance. The detector had four pairs of pixels distributed like four-quadrant and one pair in the center. Each pair is combined with one unfold pixel and the other is completely shaded, which is intend for the differential measurement circuit to improve the signal-to-noise ratio. A detection grating made by mask were directly mount on the surface of detectors. The UV detector had a current responsivity over 0.06A/W at 365nm and no response at longer than 400 nm. Under dark conditions, a low leakage current density of below 1.0×10-9A/cm2 was achieved at reverse bias of 0.3 V. The detector responsibility linearity was measured. The detection energy resolution can reach 0.16µW/cm2. The detectors were used for the light intensity calibration in optical proximity correction (OPC) to reduce the Rayleigh criterion k-factor. The combination of detectors and grating improved the measurement speed and edge measurement accuracy by using array slits detection (the grating of mask) and surface scanning method in focusing and leveling measurement system.
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