Dr. Lingmin Kong Profile

Dr. Lingmin Kong

Doc. at Zhejiang Ocean Univ

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 22 October 2010 Paper

Photoluminescence investigation of InAs quantum dots in quantum well with different strain reducing layer

Lingmin Kong, Yunqing Zhou, Rui Wang, Cunxi Zhang, Jianming Yao, Shilai Wang, Jiafa Cai, Zhengyun Wu

Proceedings Volume 7658, 76581P (2010) https://doi.org/10.1117/12.864046

KEYWORDS: Indium arsenide, Gallium arsenide, Quantum wells, Quantum dots, Luminescence, Temperature metrology, Indium gallium arsenide, Optical properties, Strain analysis, Chemical species

Read Abstract +

The emission dynamics properties of InAs self-assembled quantum dots (QDs) embedded in InGaAs/GaAs quantum well with different strain reducing layer (thin InAlAs and GaAs) were systematically investigated by time-resolved and temperature dependent photoluminescence (TR and TD PL) measurements. We observe that a thin 10 monolayer (ML) GaAs layer may increase the emission wavelength, and 1 nm additional InAlAs layer results a significant nonlinear redshift of above 1.3 μm photoluminescence (PL) peak, which can be explained from the strain analysis. TDPL spectra display an anomalous enhancement behavior of the integrated PL intensity around 150 K for the InAs QD structures without the InAlAs layer, which may be described by the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer. We study systematically PL decay time of the InAs with different structures. The PL lifetime of quantum dots grown on a 10 ML GaAs layer is a littler longer than those without the layer, and a more InAlAs layer may result in a greatly increase of PL lifetime, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. The above phenomena also approve the facts that the main mode of carrier migration is quantum tunneling effects at lower temperature, while it is the quantum transition at the higher temperature. We explained these measuring results from the competition between the carrier recombination, escape and redistribution.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years