The layered van der Waals materials γ-InSe showed great potential in integrated photonic devices and microlasers due to the high electron mobility, wide tunable direct bandgap, and high lattice compressibility. However, γ-InSe crystal has weak stability and dissociation tendency in ambient conditions, which hampers its applications. Herein, we proposed a novel method for single-crystal InSe. By thermal stretching combined with photothermal processing, ultralong and layered single-crystal InSe fibers were obtained. The InSe fiber core was effectively restrained and protected, improving the mechanical properties and stability of the device. Moreover, by using a 532 nm nanosecond pulse laser as the pump source, the WGM microlaser operating at 1107.33 nm was obtained. This work provides a convenient approach for van der Waals materials preparation and paves the pathways for the development of light sources for layered van der Waals materials.
Due to the strong light–matter interactions, van der Waals semiconducting materials have shown their great potential in the development of high-performance photodetectors. However, the van der Waals semiconducting devices via conventional growth method often introduce defects or are in the form of isolated flakes, which hinders the optoelectronics from widespread applications. In this paper, van der Waals semiconductor indium selenide (InSe) fibers for photodetection were developed based on thermal drawing. Meters level length of InSe fibers have been fabricated through thermal drawing, and the problem of easy cracking of InSe is solved. The InSe fibers have high crystallinity, and it is found that the cleavage planes have a preferential orientation. The InSe fibers show a high-speed response to modulated 639 nm laser irradiation with up to 10 kHz repetition rate. In addition, the photoelectric response of the fibers were further improved through annealing by CO2 laser.
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