640×512 back illuminated EMCCD is based on 640×512 front-face illuminated EMCCD. It is manufactured by wafer bonding, back thinning, laser annealing, film sputtering and other back illumination processes. After parameter test and imaging verification, 640×512 back illuminated EMCCD has the characteristics of high quantum efficiency, high detection sensitivity and anti-blooming, which is suitable for imaging in low illumination environment.
Inter-column transfer EMCCD uses N-type epitaxial P-well N-channel and four-layer polysilicon double-layer metal technology. It has 768×576 effective pixels and the pixel size is 13μm×13μm. The sensor has a global shutter, the maximum horizontal readout rate is 40MHz, and the dynamic range of the non-multiplier mode is 68dB.
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