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In this study, wafer weak points sensitive to mask mean-to-nominal values are characterized for a process with very high MEEF (normally more than 4). Aerial image CD uses fixed threshold to detect the wafer weak points. By using WLCD through threshold and focus window, the efficiency of wafer weak point detection is also demonstrated. A novel method using contrast range evaluation is shown in the paper. Use of the slope of aerial images for more accurate detection of the wafer weak points using WLCD is also discussed. The contrast range can also be used to detect the wafer weak points in advance. Further, since the mean to nominal of the reticle contributes to the effective contrast range in a high MEEF area this work shows that control of the mask error is critical for high MEEF layers such as poly, active and metal layers. Wafer process based weak points that cannot be detected by wafer lithography CD or WLCD will be discussed.
The E-beam Resist Test Facility (ERTF) has been established to fill the need for consortium-based testing of e-beam resists for mask writing applications on advanced mask writers out to the 11nm half-pitch node and beyond. SEMATECH and the College of Nanoscale Science and Engineering (CNSE) began establishing the ERTF in early 2012 to test e-beam resist samples from commercial suppliers and university labs against the required performance metrics for each application at the target node. Operations officially began on June 12, 2012, at which time the first e-beam resist samples were tested. The ERTF uses the process and metrology infrastructure available at CNSE, including a Vistec VB300 Vectorscan e-beam tool adjusted to operate at 50kv. Initial testing results show that multiple resists already meet, or are close to meeting, the resolution requirements for mask writing at the 11nm node, but other metrics such as line width roughness still need improvement.
An overview of the ERTF and its capabilities is provided here. Tools, baseline processes, and operation strategy details are discussed, and resist testing and benchmarking results are shown. The long-term outlook for the ERTF and plans to expand capability and testing capacity, including resist testing for e-beam direct write lithography, are also discussed.
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