Two photon lithography (TPL) is a versatile method for the fabrication of photonic structures based on photoresist materials. Structures producing vivid colors in transmission or reflection can be achieved. Combining TPL with smart hydrogels opens the route to reversible sensors for a wide range of external stimuli. The printing resolution for TPL can reach 300 nm. As the scale of the smart hydrogel is decreased from the millimeter to the micron level, its actuation speed can be increased many-fold. Herein, we report on a square spiral shaped vapor responsive hydrogel photonic structure. The structural color is shown to be reproducible and reversible under exposure to water, ethanol, IPA and acetone vapor. The influence of the fabrication laser power on the structure dimension and vapor responsivity are also demonstrated, with structures fabricated using a higher laser power producing a larger vapor sensitive spectral response. Finite difference time domain simulations accurately predict the structural color and confirm expansion of the structure when exposed to the vapors is the dominant contribution for the color transformation. Structures for pattern transformation and encryption are also demonstrated.
Plasmon-enhanced nonradiative energy transfer is demonstrated in two inorganic semiconductor systems. The first is
comprised of colloidal nanocrystal CdTe donor and acceptor quantum dots, while the second is a hybrid InGaN quantum
well-CdSe/ZnS quantum dot donor-acceptor system. Both structures are in a planar geometry. In the first case a
monolayer of Au nanospheres is sandwiched between donor and acceptor quantum dot monolayers. The largest energy
transfer efficiency is seen when the donor is ~3 nm from the Au nanopshere. A plasmon-enhanced energy transfer
efficiency of ~ 40% has been achieved for a separation of 3 nm between the Au nanopshere monolayer and the acceptor
monolayer. Despite the increased energy transfer efficiency these conditions result in strong quenching of the acceptor
QD emission. By tuning the Au nanosphere concentration and Au nanosphere-acceptor QD separation the acceptor QD
emission can be increased by a factor of ~2.8. The plasmon-enhanced nonradiative energy transfer is observed to extend
over larger distances than conventional Forster resonance energy transfer. Under the experimental conditions reported
herein, it can be described by the same d-4 dependence but with a larger characteristic distance. Using a Ag nanobox
array plasmonic component plasmon-enhanced nonradiative energy transfer has also demonstrated from an InGaN
quantum well to a ~80 nm thick layer of CdSe/ZnS colloidal quantum dots. An efficiency of ~27% is achieved, with an
overall increase in the QD emission by ~70%.
KEYWORDS: Gold, Fluorescence resonance energy transfer, Surface plasmons, Quartz, Absorption, Resonance energy transfer, Nanoparticles, Luminescence, Quantum dots, Energy transfer
F&diaero;rster resonant energy transfer (FRET) between the CdTe quantum dot (QD) acting as donors and acceptors is
investigated at nanoscale proximity to gold nanoparticles (Au NPs). Photoluminescence (PL) studies of the acceptor QD
emission from a mixed monolayer showed a distance dependent enhancement of the acceptor emission compared with
that achieved for a donor-acceptor mixed monolayer in the absence of the Au NP layer. Time-resolved photoluminescence measurements showing a reduction in the donor lifetime, accompanied by an increase in the acceptor PL lifetime, provide further evidence for surface plasmon enhanced FRET.
A 5-fold enhancement in the luminescence of CdTe nanocrystal quantum dots (QDs) is observed when they are placed in proximity to a nanostructured Au film deposited by pulsed laser deposition technique. No enhancement is observed with a nanostructured Ag film. The enhancement is due to the interaction of the QDs excitons with the localized surface plasmons (LSP). The Au surface plasmon (SP) frequency is closer to the QDs emission frequency than Ag LSP frequency and this accounts for the differences in observed behavior. As the SP-QD interaction strongly depends on the geometric structure and shape of the metal nanoparticles, a comparison with QDs deposited on a film of Au colloidal nanoparticles is presented. In the case of QDs placed directly on the Au colloids the luminescence quenching is much stronger and with a spacer layer a 3.5-fold enhancement over the bare QDs luminescence is observed.
We present a detailed study of the localized coupled-cavity modes in a photonic molecule formed from two dielectric spherical microcavities with CdTe nanocrystals, which show a multi-peak narrowband modal structure resulting from lifting of the mode degeneracy with respect to the azimuthal quantum number. The waveguiding through the coupled microcavities and wavelength switching effect is demonstrated. The feasibility of photonic molecules as the basis for a multi-channel, wavelength-tunable optical delay device is analysed.
Nonlinear polarization rotation in semiconductor optical amplifiers has been the focus of a lot of work in the past decade. A lot of research has been devoted to this phenomenon due to its possible use in all-optical switching. It has been mentioned as a possible competitor to such established switching techniques as cross-gain modulation, cross-phase modulation and four-wave mixing. The speed at which the switching can be performed is determined by the gain dynamics in the device. So far the majority of the work has focused on switching due to the relatively slow carrier density recombination, which limits the switching to the order of tens of gigahertz. If the polarization dependence of ultrafast gain mechanisms such as carrier heating and spectral hole burning can be identified and measured then there is the possibility to increase the switching speed obtainable using this process into the terahertz range. In order to further the understanding of the polarization dependence of the gain of a bulk SOA under tensile strain and to determine the plausibility of ultrafast all-optical switching using nonlinear polarization rotation an experiment is presented based on a four-wave mixing technique.
γ-CuCl is a wide-bandgap (Eg = 3.395eV), direct bandgap, semiconductor material with a cubic zincblende lattice structure. Its lattice constant, aCuCl = 0.541 nm, means that the lattice mismatch to Si (aSi = 0.543 nm) is <0.5%. γ-CuCl on Si-the growth of a wide-bandgap, direct bandgap, optoelectronics material on silicon substrates is a novel material system, with compatibility to current Si based electronic/optoelectronics technologies. The authors report on early investigations consisting of the growth of polycrystalline, CuCl thin films on Si (100), Si (111), and quartz substrates by physical vapour deposition. X-ray diffraction (XRD) studies indicate that CuCl grows preferentially in the <111> direction. Photoluminescence (PL) and Cathodoluminescence (CL) reveal a strong room temperature Z3 excitonic emission at ~387nm. A demonstration electroluminescent device (ELD) structure based on the deposition of CuCl on Si was developed. Preliminary electroluminescence measurements confirm UV light emission at wavelengths of ~380nm and ~387nm, due to excitonic behaviour. A further emission occurs in the bandgap region at ~360nm.
We present a detailed study of the localized coupled-cavity modes in a photonic molecule formed from two dielectric spherical microcavities with CdTe nanocrystals, which show a multi-peak narrowband modal structure resulting from lifting of the mode degeneracy with respect to the azimuthal quantum number. The feasibility of photonic molecules as the basis for a multi-channel, wavelength-tunable optical delay device is analysed.
A contra-propagation set up is implemented and dynamic pump probe studies of a InGaAsP/InP SOA in the gain regime are undertaken using pulses of 2ps duration. The time resolved amplified probe signal is measured separately for the TE and TM modes of the semiconductor optical amplifier. Different behaviours are observed both in the gain compression and the timescales of the effect, with the TM mode displaying a faster component and a higher gain compression.
Future high-speed optical communications networks operating at data rates in excess of 100Gbit/s per channel will require a sensitive and ultrafast technique for precise optical signal monitoring. The standard way of characterising high-speed optical signals to use a fast photodetector in conjunction with a high-speed oscilloscope. However, this method is limited to a maximum data rate of approximately 40Gbit/s. An alternative is to employ all-optical sampling techniques based on ultrafast optical nonlinearities present in optical fibres, optical crystals and semiconductors. One such nonlinearity is the optical-to-electrical process of Two-Photon Absorption (TPA) in a semiconductor. This paper presents an optical sampling technique based on TPA in a specially designed semiconductor microcavity. By incorporating the microcavity design, we are able to enhance the TPA efficiency to a level that can be used for high-speed optical sampling.
Copper (I) Chloride is a wide band gap semiconductor with great potential for silicon-based optoelectronics due to the fact that is closely lattice matched with silicon. This work examines the deposition of CuCl thin films by magnetron sputtering on silicon and glass substrates. Film structural and morphological properties are studied with X-ray diffraction and atomic force microscopy. Optical absorbance and luminescence spectra of CuCl thin films are analysed in order to study the excitonic features. The influence of deposition process parameters and post annealing on the film properties are also reported.
We report highly efficient Forster resonance energy transfer between CdTe nanocrystals and two different dyes, Rhodamine B and Oxazine, where the nanocrystals are mixed with the dyes on top of glass substrates. A faster NC decay curve is observed in the samples containing NCs mixed with dyes than in those containing NCs on their own. For the samples containing nanocrystals mixed with Rhodamine B, room temperature PL measurements are presented as a function of the ratio between the amount of acceptors and the amount of donors, CA/CD. This ratio is varied between 0.03 and 5. The strongest enhancement of the acceptor PL intensity relative to that of the donor PL intensity is reached for 0.2A/CD<5, suggesting that most efficient FRET is also achieved in this region.
The optimized optical design of GaN resonant cavity light emitting didoes (RCLEDs) emitting at 510nm for maximum extraction efficiency into numerical apertures (NAs) of 1.0 (total emission) and 0.5 (typical plastic optical fiber NA) are determined using a modeling tool based on the simulation of dipole emission in a multilayer structure. The optimization is performed for a metal-AlGaN/GaN DBR cavity structure as functions of the aluminum fraction in the DBR and the internal quantum well (QW) emission linewidth. The optimum number of DBR pairs is shown to depend on both these parameters together and the emission NA, and varies between 3 and 14. The maximum calculated extraction efficiency for a metal-AlN/GaN cavity structure, assuming a QW emission linewidth of 30nm, is 0.18 (0.055) into an emission NA of 1.0 (0.5). The position of the QW relative to the metal mirror is shown to be the crucial device parameter in determining the extraction efficiency of the RCLED. Simulations show farfield measurements should provide information on the position of the QWs in the cavity. The reduction in the spectral emission linewidth of the RCLED due to the cavity is also modeled.
We present a photoluminescence and photoluminescence excitation study of CdTe quantum dots, prepared via a novel organometallic approach. The global photoluminescence (excited at the energy above the absorption edge) showed a red shift of 75 meV with respect to the first absorption peak. This band edge emission was found to be strongly dependent on the excitation photon. Resonant emission spectra showed a pronounced spectral shift and line narrowing with decreasing excitation energy. The resonant Stokes shifts were extracted from photoluminescence and photoluminescence excitation data. The minimum magnitude of the resonant Stokes shift of 14 meV was obtained at room temperature.
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