KEYWORDS: Short wave infrared radiation, Nanowires, Silicon, Heterojunctions, Silicon photonics, Tin, Chemical species, Transmission electron microscopy, Compound semiconductors, Control systems
Sn-containing group IV semiconductors (Si)GeSn represent a versatile platform to implement a variety of Si-compatible photonic, optoelectronic, and photovoltaic devices. This class of semiconductors provides two degrees of freedom, strain and composition, to tailor the band structure and lattice parameter thus laying the groundwork to implement novel heterostructures and low-dimensional systems on a Si substrate. In this presentation, we will discuss the recent progress in controlling and understanding the opto-electronic properties of metastable (Si)GeSn semiconductor nanowires and heterostructures. We will shed new light on the basic mechanisms governing their epitaxial growth and thermal stability. We will also discuss the opto-electronic properties and present strategies to integrate these material systems in the fabrication of short wavelength infrared (SWIR) and mid-infrared (MIR) detectors and light emitting devices.
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