This paper aims to investigate the effects of the temperature on the mode-locking capability of two section InAs/InP
quantum nanostructure (QN) passively mode locked lasers. Devices are made with multi-layers of self-assembled InAs
QN either grown on InP(100) (5 quantum dashes (QDashes) layers) or on InP (311)B (6 quantum dots (QDs) layers).
Using an analytical model, the mode-locking stability map is extracted for the two types of QN as a function of optical
absorption, cavity length, current density and temperature. We believe that this study is of first importance since it
reports for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of
InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed
through a proper analysis of the mode-locking stability maps. Experimental results also show that under some specific
conditions the mode-locking operation can be temperature independent.
This paper reports the fabrication and the characterisation of a 10 GHz two-section passively mode-locked quantum dash
laser emitting at 1.59 μm. The potential of the device's mode-locking is investigated through an analytical model taking
into account both the material parameters and the laser geometry. Results show that the combination of a small absorbing
section coupled to a high absorption coefficient can lead to an efficient mode-locking. Characterisation shows mode-locking
operation though output pulses are found to be strongly chirped. Noise measurements demonstrate that the single
side band phase noise does not exceed -80 dBc/Hz at 100 kHz offset leading to an average timing jitter as low as 800 fs.
As compared to single QW lasers these results constitute a significant improvement and are of first importance for
applications in optical telecommunications.
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