MBE and MOVPE growths of InP-based extended wavelength and GaSb-based IR emitter and detector structures have progressed to production mode. These photonics device structures are typically grown using large format, multi wafer MBE and MOCVD tools and on large diameter substrates (100 to 150 mm). In this work, material characterization data of advanced InP- and GaSb based epitaxial structures will be shown. Multi point measurements showing cross-wafer and cross-platen uniformity will also be shared. Finally, detailed analysis of run-to-run epiwafer data will be presented to demonstrate the manufacturability of our production epitaxial process for these advanced photonics device structures.
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