The epitaxial growth of <110> silicon nanowires on (110) Si substrates by the vapor-liquid-solid growth process was investigated using SiCl4 as the source gas. A high percentage of <110> nanowires was obtained at high temperatures and reduced SiCl4 partial pressures. Transmission electron microscopy characterization of the <110> Si nanowires revealed symmetric V-shaped {111} facets at the tip and large {111} facets on the sidewalls of the nanowires. The symmetric {111} tip faceting was explained as arising from low catalyst supersaturation during growth which is expected to occur given the near-equilibrium nature of the SiCl4 process. The predominance of {111} facets obtained under these conditions promotes the growth of <110> SiNWs.
Radio-frequency photoconductance decay (RF-PCD) is a contactless method of measuring minority carrier lifetime in silicon. Low detection limits and speed of measurement makes this method ideally suited for in-situ determination of silicon wafer passivation and contamination processes. Comparative measurements of copper contamination of silicon surfaces using RF- PCD and TXRF yield a detection limit of about 109 Cu/cm2. The fast detection of changes in surface defects enables the time resolved observation of surface passivation breakdown due to the exposure of the wafer to controlled atmospheres. While nitrogen does not attack the surface passivation, oxygen exposure results in immediate native oxide growth.
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