The operation of vertical-cavity surface-emitting lasers (VCSELs) results from the interplay among different physical mechanisms. For this reason, even a basic VCSEL model must address the coupling of electrical injection, stimulated/spontaneous emission and optical resonances, without disregarding the strong thermal effects affecting each of these models, leading to the need of an entangled multiphysical description. With the aim to fill the present gap of advanced comprehensive VCSEL models, in this work we present our VCSEL electro-opto-thermal numerical simulator (VENUS). The paper describes the VENUS constitutive blocks and their coupling strategy. The model is then validated by comparing the most significant lasing features with experimental results.
We present a novel approach to determine the thermal resistance and the internal temperature of vertical-cavity surface-emitting lasers (VCSELs) based on easily accessible laser parameters. The described method does not use any empirical parameters or pulsed measurements that are often mentioned in literature. We explain how to determine the thermal resistance and show the computation of the internal temperature for any operation point. Furthermore the data evaluation can be used for characteristic parameter extraction that enables us to establish an isothermal and temperature-dependent modeling of the VCSEL operation curves.
We are implementing an electro–thermal simulation tool to optimize the characteristics of GaAs-based vertical- cavity surface-emitting lasers (VCSELs). For this purpose it turned out to be necessary to revisit basic material parameters. In this paper we elaborate on the composition, carrier density, and temperature dependencies of the electron mobility of AlxGa1−xAs semiconductors. We present the principles of the pragmatic quasi-three- dimensional (q3D) device model and show selected results.
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