Dr. Markus Waiblinger Profile

Dr. Markus Waiblinger

Senior Product Manager at Carl Zeiss SMT GmbH

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Author

Publications (14)

Proceedings Article | 5 March 2021 Presentation + Paper

Particle removal tool to repair particle defects on EUV reticles

Mark van de Kerkhof, Markus Waiblinger, Julia Weber, Christof Baur, Andrey Nikipelov, Christian Cloin

Proceedings Volume 11609, 116090N (2021) https://doi.org/10.1117/12.2583981

KEYWORDS: Particles, Reticles, Extreme ultraviolet, Tin, X-rays, Statistical analysis, Scanning electron microscopy, Scanners, Photomasks, Pellicles

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Proceedings Article | 23 October 2015 Paper

Photomask repair using low-energetic electrons

K. Edinger, K. Wolff, P. Spies, T. Luchs, H. Schneider, N. Auth, Ch. Hermanns, M. Waiblinger

Proceedings Volume 9635, 96351P (2015) https://doi.org/10.1117/12.2207755

KEYWORDS: Photomasks, Electrons, Etching, Quartz, Ions, Chemistry, Electron beams, Molecules, Extreme ultraviolet, Particles

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SPIE Journal Paper | 27 October 2014

Defect mitigation considerations for EUV photomasks

Anthony Garetto, Renzo Capelli, Frederik Blumrich, Krister Magnusson, Markus Waiblinger, Thomas Scherübl, Jan Hendrik Peters, Michael Goldstein

JM3, Vol. 13, Issue 04, 043006, (October 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.043006

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Scanners, Extreme ultraviolet lithography, Scanning electron microscopy, Lithography, Deep ultraviolet, Atomic force microscopy, Manufacturing

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Proceedings Article | 17 October 2014 Paper

Bringing mask repair to the next level

K. Edinger, K. Wolff, H. Steigerwald, N. Auth, P. Spies, J. Oster, H. Schneider, M. Budach, T. Hofmann, M. Waiblinger

Proceedings Volume 9235, 92350R (2014) https://doi.org/10.1117/12.2072474

KEYWORDS: Photomasks, Ion beams, Ions, Chemistry, Electron beams, Quartz, Etching, Molecules, Image resolution, Extreme ultraviolet

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Proceedings Article | 8 November 2012 Paper

E-beam based mask repair as door opener for defect free EUV masks

Markus Waiblinger, Tristan Bret, Rik Jonckheere, Dieter Van den Heuvel

Proceedings Volume 8522, 85221M (2012) https://doi.org/10.1117/12.966387

KEYWORDS: Photomasks, Extreme ultraviolet, Scanning electron microscopy, Semiconducting wafers, Reticles, Mirrors, Atomic force microscopy, Printing, Distortion, Inspection

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Proceedings Article | 30 June 2012 Paper

The door opener for EUV mask repair

M. Waiblinger, R. Jonckheere, Tristan Bret, D. Van den Heuvel, C. Baur, G. Baralia

Proceedings Volume 8441, 84410F (2012) https://doi.org/10.1117/12.978285

KEYWORDS: Photomasks, Extreme ultraviolet, Scanning electron microscopy, Semiconducting wafers, Reticles, Inspection, Mirrors, Printing, Distortion, Atomic force microscopy

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Proceedings Article | 23 March 2012 Paper

Closing the gap for EUV mask repair

T. Bret, R. Jonckheere, D. Van den Heuvel, C. Baur, M. Waiblinger, G. Baralia

Proceedings Volume 8322, 83220C (2012) https://doi.org/10.1117/12.918322

KEYWORDS: Photomasks, Scanning electron microscopy, Extreme ultraviolet, Atomic force microscopy, Semiconducting wafers, Reticles, Inspection, Mirrors, Etching, Printing

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Proceedings Article | 14 October 2011 Paper

Repair of natural EUV reticle defects

R. Jonckheere, T. Bret, D. Van den Heuvel, J. Magana, W. Gao, M. Waiblinger

Proceedings Volume 8166, 81661G (2011) https://doi.org/10.1117/12.898864

KEYWORDS: Semiconducting wafers, Photomasks, Printing, Scanning electron microscopy, Atomic force microscopy, Extreme ultraviolet, Inspection, Reticles, Visualization, Extreme ultraviolet lithography

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Proceedings Article | 2 April 2011 Paper

Imaging performance improvements by EUV mask stack optimization

Natalia Davydova, Eelco van Setten, Robert de Kruif, Dorothe Oorschot, Mircea Dusa, Christian Wagner, Jiong Jiang, Wei Liu, Hoyoung Kang, Hua-yu Liu, Petra Spies, Nils Wiese, Markus Waiblinger

Proceedings Volume 7985, 79850X (2011) https://doi.org/10.1117/12.884504

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet, Critical dimension metrology, Extreme ultraviolet lithography, Semiconducting wafers, Optical proximity correction, 3D modeling, Data modeling, Reflection

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EUVL requires the use of reflective optics including a reflective mask. The mask contains a reflecting multilayer, tuned for 13.5 nm light, and an absorber which defines the dark areas. The EUV mask itself is a complex optical element with many more parameters than just the mask CD uniformity of the patterned features that impact the final wafer CDU. One of these parameters is absorber height. It has been shown that the oblique incidence of light in combination with the small wavelength compared to the mask topography causes a so-called shadowing effect manifesting itself particularly in an HV wafer CD offset. It was also shown that this effect can be essentially decreased by reducing absorber height and, in addition, it can be corrected by means of OPC. However, reduction of absorber height has a side effect that is an increased reflectivity of a mask black border resulting in field-to-field stray light due to parasitic reflections. One of the solutions to this problem is optical process correction (OPC) at field edges. In this paper we will show experimental data obtained on ASML EUV Alpha tool illustrating the black border effect and will demonstrate that this effect can be accurately predicted by Brion Tachyon EUV model allowing for a significant cross field CD uniformity improvement with mask layout correction technique. Also we show by means of rigorous 3D simulations that it is possible to improve the imaging performance significantly by performing global optimization of mask absorber height and mask bias in order to increase exposure latitude, decrease CD sensitivity to mask making variations such as CD mask error and absorber stack height variations. By sacrificing some exposure latitude throughput of exposure tool can be increased essentially and HV mask biasing can be reduced. For four masks with different absorber thicknesses from 44 nm to 87 nm it is proven experimentally by means of the EUV Alpha tool exposures of 27 nm L/S that the absorber thickness can be tuned to maximize exposure latitude. It was also proven that dose to size grows with absorber height and optimal feature bias depends on mask absorber height.

Proceedings Article | 29 September 2010 Paper

EUV mask stack optimization for enhanced imaging performance

Eelco van Setten, Dorothe Oorschot, Cheuk-Wah Man, Mircea Dusa, Robert de Kruif, Natalia Davydova, Kees Feenstra, Christian Wagner, Petra Spies, Nils Wiese, Markus Waiblinger

Proceedings Volume 7823, 78231O (2010) https://doi.org/10.1117/12.864247

KEYWORDS: Photomasks, Extreme ultraviolet, Critical dimension metrology, Reticles, Semiconducting wafers, Reflectivity, Extreme ultraviolet lithography, Optical proximity correction, Scanning electron microscopy, Etching

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Proceedings Article | 15 May 2010 Paper

e-beam induced EUV photomask repair: a perfect match

M. Waiblinger, K. Kornilov, T. Hofmann, K. Edinger

Proceedings Volume 7545, 75450P (2010) https://doi.org/10.1117/12.863542

KEYWORDS: Photomasks, Extreme ultraviolet, Etching, Semiconducting wafers, Scanning electron microscopy, Electron beams, Particles, Chemistry, Mirrors, Molecules

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Proceedings Article | 23 September 2009 Paper

High-resolution e-beam repair for nanoimprint templates

Marcus Pritschow, Harald Dobberstein, Klaus Edinger, Mathias Irmscher, Douglas Resnick, Kosta Selinidis, Ecron Thompson, Markus Waiblinger

Proceedings Volume 7488, 74880V (2009) https://doi.org/10.1117/12.833030

KEYWORDS: Scanning electron microscopy, Etching, Electron beams, Semiconducting wafers, Metals, Manufacturing, Silicon, Nanoimprint lithography, Photomasks, Ultraviolet radiation

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Proceedings Article | 23 September 2009 Paper

Challenging defect repair techniques for maximizing mask repair yield

Anthony Garetto, Jens Oster, Markus Waiblinger, Klaus Edinger

Proceedings Volume 7488, 74880H (2009) https://doi.org/10.1117/12.833404

KEYWORDS: Etching, Magnesium, Opacity, Optical properties, Bridges, Yield improvement, Cadmium, Scanning electron microscopy, Electron beams, Climatology

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Proceedings Article | 17 October 2008 Paper

Advanced process capabilities for electron beam based photomask repair in a production environment

Anthony Garetto, Christof Baur, Jens Oster, Markus Waiblinger, Klaus Edinger

Proceedings Volume 7122, 71221K (2008) https://doi.org/10.1117/12.801554

KEYWORDS: Photomasks, Electron beams, Opacity, Etching, Sensors, Quartz, Resolution enhancement technologies, Chemistry, Ion implantation

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Showing 5 of 14 publications

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