Key enabler of the successful introduction of EUV lithography into volume production is the EUV mask
infrastructure. For the production of defect free masks, actinic review of potential defect sites to decide on the need
for repair or compensation is required. Also, the repair or compensation with the ZEISS MERiT electron beam repair
tool needs actinic verification in a closed loop mask repair solution. For the realization of actinic mask review,
ZEISS and the SEMATECH EUVL Mask Infrastructure consortium started a development program for an EUV
aerial image metrology system, the AIMSTM EUV, with realization of a prototype tool.
The development and prototype realization of the AIMSTM EUV has entered the tool calibration and qualification
phase utilizing the achieved capabilities of EUV aerial image acquisition and EUV mask handling. In this paper, we
discuss the current status of the prototype qualification and show recent measurement results.
The EUV mask infrastructure is of key importance for the successful introduction of EUV lithography into volume production. In particular, for the production of defect free masks an actinic review of potential defect sites is required. To realize such an actinic review tool, Carl Zeiss and the SEMATECH EUVL Mask Infrastructure consortium started a development program for an EUV aerial image metrology system, the AIMS™ EUV. In this paper, we discuss the current status of the prototype integration and show recent results.
Overcoming the challenges associated with photomask defectivity is one of the key aspects associated with EUV
mask infrastructure. In addition to establishing specific EUV mask repair approaches, the ability to identify printable
mask defects that require repair as well as to verify if a repair was successful are absolutely necessary. Such
verification can only be performed by studying the repaired region using actinic light at an exact emulation of the
scanner illumination conditions of the mask as can be done by the AIMSTM EUV. ZEISS, in collaboration with the
SEMATECH EUVL Mask Infrastructure (EMI) consortium are currently developing the AIMSTM EUV system and
have recently achieved First Light on the prototype system, a major achievement. First light results will be presented
in addition to the current development status of the system.
The EUV mask infrastructure is of key importance for a successful introduction of EUV lithography into volume
production. In particular, for the production of defect free masks, actinic review of potential defect sites is required. To
realize such an actinic review tool, Zeiss and the SEMATECH EUVL Mask Infrastructure consortium started a
development programme for an EUV aerial image metrology system (AIMS™ EUV). In this paper, we discuss the
status of the on-going system integration and show first results from the first light tests of the prototype tool.
The need for an actinic wavelength AIMS™ EUV tool by 2014 has been defined by SEMATECH due to the challenges
associated with EUV mask manufacture and defectivity. The AIMS™ EUV development project began in June of 2011
as a collaboration between ZEISS and the SEMATECH EUVL Mask Infrastructure (EMI) consortium. The project
remains on track to meet the first commercial tool shipment in September 2014. The current design status of the system
after two years as well as recent progress in the prototype build will be presented.
In previous conferences the status of the AIMS™ EUV project has been presented in which the basic layout scheme and preliminary design have been shown along with the targeted performance specification levels to be met. Presently the final design milestone of the project has been successfully completed and assembly of the prototype
tool is underway. The final design concept will be presented along with the current status of the tool and simulated performance data.
The EUV mask infrastructure is of key importance for a successful introduction of EUV lithography into volume
production. In particular, for the production of defect free masks an actinic review of potential defect sites is required.
With such a review it can be decided if a defect needs to be repaired or compensated. It also serves as verification
whether the respective absorber or compensational repair with e.g. the MeRiT® tool has been successful, i.e. it closes the
control loop in mask repair. To realize such an actinic review tool, Carl Zeiss and the SEMATECH EUVL Mask
Infrastructure consortium started a development programme for an EUV aerial image metrology system (AIMS™ EUV).
In this paper, we discuss the application of the AIMS™ EUV in the compensational repair process of multilayer and
blank defects and present the status of the AIMS™ EUV project.
The high volume device manufacturing infrastructure for the 22nm node and below based on EUVL technology requires
defect-free EUV mask manufacturing as one of its foundations. The EUV Mask Infrastructure program (EMI) initiated
by SEMATECH has identified an actinic measurement system for the printability analysis of EUV mask defects to
ensure defect free mask manufacturing and cost-effective high-volume EUV production as an infrastructural prerequisite
for the EUVL roadmap ([1], [2]).
The Concept and Feasibility study for the AIMSTM EUV resulted in a feasible tool concept for 16nm defect printability
review. The main development program for the AIMSTM EUV has been started at Carl Zeiss leading to a commercialized
tool available in 2014.
In this paper we will present the status of the progress of the design phase of this development and an infrastructure
progress update of the EUV Mask defect printability review.
This paper presents first results to assess the feasibility of a cleaning strategy for EUV production tools. The EUV experiments were performed in a dedicated UHV contamination chamber connected to the DLW20 dipole beam line at the PTB laboratories at BESSY II in Berlin. An in-situ reflectometry system has been implemented inside the contamination chamber to allow for real-time detection of mirror reflection changes. The reproducibility of the in-situ reflectometry system has proven to be about 0.03%, allowing the measurement of reflection changes below 0.1%. Cleaning cycles were performed at producation tool power density levels, i,e,, 10-30 mW/mm2 broadband radiation, on capped Mo/Si mirror samples. Carbon was deposited intentionally at ypical hydrocarbon pressures in the 10-8 mbar regime. Cleaning was done at background levels of hydrocarbons and 10-4 mbar molecular oxygen. First results show that cleaning of a mirror at high power densities and typical tool conditions can restore the reflection close to its initial value.
For the high brilliance synchrotron radiation source BESSY II a couple of systems performing microscopy and spectromicroscopy at both high spatial and high energy resolution are planned or already under construction. The desired spatial resolution is in the nm-range, and thus monochromators are required which conserve the brilliance of the source throughout the beamline onto the analysed area. To serve the ultrahigh-resolution spectromicroscope SMART, a Petersen
monochromator will be installed at an insertion device of 49 mm period length. When operated in highest spatial resolution mode, the field of view of the microscope is about 5 jtm in diameter. To optimize the photon flux density in the microscopes field of view, we studied the performance of the Petersen monochromator for various horizontal demagnification factors. The resulting optical layout produces a monochromatic image of the undulator source on the sample surface, which has a horizontal size of about 9 pm full width at half maimum. The vertical size of 5itm is determined by the exit slit width.
The paper describes a concept to improve the present photon-induced scanning Auger- microscope, a high-flux micro-spectroscope which allows electron spectroscopy with high spatial resolution, in-situ chemical mapping, and microstructuring of organic and organometallic compounds. It utilizes high-brightness, quasi-monochromatic undulator radiation from BESSY storage ring. The present electron energy resolution (>= 0.5 eV) appears sufficient but the spatial resolution (>= 3 micrometers ) can be significantly improved. The new concept compromises grazing incidence optics in a two stage reduction scheme in order to combine an increase of photon flux with an increase of the spatial resolution to 0.2 micrometers . The key component of the improved instrument is an ellipsoidal grazing incidence mirror for which optimization calculations have been performed. These include diffraction, surface roughness and slope errors as well as manufactural limitations taking technical realizability into account.
A coherent optical processor is constructed using two-wave mixing in a BaTiO3 crystal. This system is capable of performing autocorrelation of an input image in two successive steps. Theoretical considerations of the system are successfully compared with the experimental results. Influences of the mixing angle and intensity ratios on the result are discussed.
This paper gives a brief overview of neural networks noting the advantages of the optical implementation. The Hopfield model mainly used as an associative memory is introduced. Planar holograms have been used to defme the interconnections between neurons in optical systems but volume holograms with photorefractive crystals offer much greater potential and density for these interconnections1. Because of the lack of suitable optical material light modulators have been used to simulate neurons in the neural plane. A simple one-layer network using photorefractive material will be presented along with some preliminary results.
A method for increasing the visibility of Young fringes in Laser Speckle Velocimetry of up to 20 is proposed utilizing optical autocorrelation with photorefractive crystal BaTiO3. 1.
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