Dr. Martin Müller Profile

Dr. Martin Müller

Senior Manager at Osram Opto Semiconductors GmbH

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Publications (6)

Proceedings Article | 19 February 2018 Paper

Advances in infrared high power lasers for long term operation

Martin Müller, Sebastian Hein, Fabian Eigenmann, Christian Lauer, Harald König, Uwe Strauß

Proceedings Volume 10514, 105140I (2018) https://doi.org/10.1117/12.2289720

KEYWORDS: Pulsed laser operation, Semiconductor lasers, Laser applications, Continuous wave operation, High power lasers, Infrared lasers, Infrared radiation, Semiconductors, LIDAR

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Proceedings Article | 22 February 2017 Paper

Recent brightness improvements of 976 nm high power laser bars

Alexander Bachmann, Christian Lauer, Michael Furitsch, Harald König, Martin Müller, Uwe Strauß

Proceedings Volume 10086, 1008602 (2017) https://doi.org/10.1117/12.2262985

KEYWORDS: High power lasers, Semiconductor lasers, Fiber lasers, Laser systems engineering, Broad area laser diodes, Gallium arsenide lasers, High power diode lasers, Infrared lasers, Laser applications, Reliability, Laser cutting, Resistance

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Proceedings Article | 21 February 2011 Paper

Next generation 8xx nm laser bars and single emitters

Uwe Strauss, Martin Müller, Tomasz Swietlik, Robin Fehse, Christian Lauer, Günther Grönninger, Harald König, Markus Keidler, Thierry Fillardet, Andreas Kohl, Michael Stoiber, Iris Scholl, Jens Biesenbach, Martina Baeumler, Helmer Konstanzer

Proceedings Volume 7918, 79180T (2011) https://doi.org/10.1117/12.874818

KEYWORDS: Semiconductor lasers, Laser applications, Continuous wave operation, Laser welding, High power lasers, Laser development, Luminescence, Pulsed laser operation, Laser marking, Mirrors

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Semiconductor lasers with emission in the range 790 - 880 nm are in use for a variety of application resulting in different laser designs to fulfill requirements in output power, operation temperature and lifetimes. The output power is limited by self heating and catastrophic optical mirror damage at the laser facet (COMD). Now we present data on bars fabricated with our new facet technology, which enables us to double the maximum facet load. We present q-cw laser bar with 80% fill factor with increased power level to 350W in long term operation at 200μs and 100Hz. The COMD limit of the bar is as high as 680W. Using Quantel's optimized packaging stacks with 11 bars of 5mm widths are tested at up to 120A resulting over 66% power conversion efficiency at 1600W output power. Laser bars for continuous wave operation like 50% fill factor bars had an COMD limit of approx. 250W with conventional facet technology, the value is equivalent to 10W per 200μm emitter (conditions: 200μs). The new facet technology pushes the facet stability to 24W/emitter. The new process and an improved design enable us to shift continuous wave operation at 808nm from 100W to 150W/bar with lifetimes of several thousand hours at 30°C using DILAS mounting technology. Higher power is possible depending on lifetime requirements. The power conversion efficiency of the improved devices is as high as 62% at 200W cw. The next limitation of 8xxnm lasers is high temperature operation: Values of 60-80°C are common for consumer applications of single emitters. Therefore Osram developed a new epitaxial design which reduced the generation of bulk defects. The corresponding Osram single emitters operate at junction temperatures up to 95°C, a value which corresponds to 80°C heat sink temperature for lasers soldered on C-mount or 65°C case temperature for lasers mounted in TO can. Current densities of the single emitter broad area lasers are as high as 1.4kA/cm² at 850nm emission wavelength.

Proceedings Article | 8 May 2008 Paper

The physics of catastrophic optical damage in high-power AlGaInP laser diodes

M. Bou Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Müller, M. Reufer, K. Streubel, M. Ziegler, J. Tomm, G. Bacher

Proceedings Volume 6997, 699703 (2008) https://doi.org/10.1117/12.779524

KEYWORDS: Aluminium gallium indium phosphide, Semiconductor lasers, Thermography, Temperature metrology, Absorption, Near field, Waveguides, Electroluminescence, Cameras, Physics

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Proceedings Article | 25 February 2008 Paper

High-power laser bars with emission in the red spectral range for medical applications

Konstantin Boucke, Wolfgang Schmid, Wolfgang Brandenburg, Martin Mueller, Uwe Strauß

Proceedings Volume 6876, 68761C (2008) https://doi.org/10.1117/12.765091

KEYWORDS: Quantum wells, Temperature metrology, Indium, Laser stabilization, Copper, Laser welding, High power lasers, Resistance, Fiber lasers, Polarization

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Proceedings Article | 7 February 2007 Paper

Monolithically stacked high-power diode laser bars in quasi-continuous-wave operation exceeding 500 W

M. Müller, M. Philippens, G. Grönninger, H. König, J. Moosburger, G. Herrmann, M. Reufer, J. Luft, M. Stoiber, D. Lorenzen

Proceedings Volume 6456, 64561B (2007) https://doi.org/10.1117/12.699827

KEYWORDS: Semiconductor lasers, Pulsed laser operation, Resistance, Continuous wave operation, High power lasers, Mirrors, Diodes, Quasi continuous wave operation, Epitaxy, Laser resonators

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Showing 5 of 6 publications

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