Front-illuminated p-i-n GaN-based ultraviolet (UV) avalanche photodiodes (APDs) were grown by metalorganic chemical vapor deposition (MOCVD) on 25 mm dia. bulk Ammono® n-GaN substrate having a low etch pit density (EPD) less than 5 × 104 [cm-2] and processed into 6×6 APD arrays. The devices employed N-ion implantation to achieve sidewall passivation. Evaluation of these 6×6 arrays will help to confirm the uniformity of the epitaxial materials and device processing. The maximum avalanche gain reached ~ 3×105 at the breakdown (current limited). The dark current density was 10-9 A/cm2 at reverse bias up to -20 V and the APDs exhibited a reverse breakdown voltage of 81 ± 1 V for all 36 devices without any leaky devices, confirming a high uniformity of the growth and fabrication processes.
We report the current progress of our development of near-ultraviolet (NUV) III-nitride vertical-cavity LED emitters and avalanche photodetectors grown by metalorganic chemical vapor deposition (MOCVD). The III-N emitters are designed to be UV vertical-cavity surface-emitting lasers operating at 369.5nm. We describe the development of the growth and processing of an air-gap/AlGaN distributed Bragg reflector (DBR) consisting of five-pairs of quarter-wavelength layers of Al0.12Ga0.88N and air-gap regions created by selective chemical etching. A 4-6λ cavity was employed in the laser structure. We also report on the electrical and optical emission characteristics of these microcavity emitters. The photodetectors are GaN- and AlGaN-based p-i-n avalanche photodiodes (APDs) designed for front-side illumination. We report on the electrical and optical detection characteristics of these photodetectors.
Front-illuminated GaN p-i-p-i-n separate-absorption and multiplication avalanche photodiode (SAM-APD) epitaxial structures were grown by metalorganic chemical vapor deposition (MOCVD) on n-type bulk GaN substrates and fabricated into 4×4 arrays with a large detection area of 100×100 μm2. The SAM-APD array showed a uniform distribution of dark current density of JDark<(5.1±0.8)×10-8 A/cm2 at reverse bias (VR) of 44 V except for two of them. In addition, the average onset points of breakdown voltages (VBR) of the SAM-APD array was 73.1±0.21 V, and no microplasmas were visually observed after multiple times I-V scans.
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