As the feature sizes of LSI become smaller, the increase in mask manufacturing time (TAT) and cost is becoming critical
and posing challenges to the mask industry and device manufacturers. In May 2006, ASET Mask D2I launched a 4-year
program for the reduction in mask manufacturing TAT and cost, and the program was completed in March 2010. The
focus of the program was on the design and implementation of a synergetic strategy involving concurrent optimization of
MDP, mask writing, and mask inspection. The strategy was based upon four key elements: a) common data format, b)
pattern prioritization based on design intent, c) an improved approach in the use of repeating patterns, and d) parallel
processing. In the program, various software and hardware tools were developed to realize the concurrent optimization.
After evaluating the effectiveness of each item, we estimated the reduction in mask manufacturing TAT and cost by the
application of results obtained from the Mask D2I programs. We found that mask manufacturing TAT and cost can be
reduced to 50% (or less) and to about 60% respectively.
The Proximity Effect is a critical problem in EB Lithography which is used in Photomask writing. Proximity Effect
means that an electron shot by gun scatters by collided with resist molecule or substrate atom causes CD variation
depending on pattern density [1]. Scattering by collision with resist molecule is called as "forward scattering", that
affects in dozens of nanometer range, and with substrate atom is called as "backward scattering, that affects
approximately 10 micrometer in 50keV acceleration voltage respectively.
In conventional Proximity Effect Correction (PEC) for mask writing, we don't need to think forward scattering effect.
However we should think about forward scattering because of smaller feature size.
We have proposed a PEC software product named "PATACON PC-Cluster"[2], which can concern forward scattering
and calculate optimum dose modulation. In this communication, we explain the PEC processing throughput when the
that takes forward scattering into account. The key technique is to use different processing field size for forward
scattering calculation.
Additionally, the possibility is shown that effective PEC may be available by connecting forward scattering and
backward scattering.
In May 2006, the Mask Design, Drawing, and Inspection Technology Research Department (Mask D2I) at the
Association of Super-Advanced Electronics Technologies (ASET) launched a 4-year program for reducing mask
manufacturing cost and TAT by concurrent optimization of Mask Data Preparation (MDP), mask writing, and mask
inspection [1]. Figure 1 shows an outline of the project at Mask D2I at ASET. As one of the tasks being pursued at the
Mask Design Data Technology Research Laboratory we have evaluated the effect of reducing the writing shot counts by
utilizing the repeating patterns, and that showed positive impact on mask making by using CP writing. During the past
four years, we have developed a software to extract repeating patterns from fractured OPCed mask data and have
evaluated the efficiency of reducing the writing shot counts using the repeating patterns with this software. In this
evaluation, we have used many actual device production data obtained from the member companies of Mask D2I. To the
extraction software, we added new functions for extracting common repeating patterns from a set of multiple masks, and
studied how this step affects the ratio of reducing the shot counts in comparison to the case of utilization of the repeating
patterns for single mask. We have also developed a software that uses the result of extracting repeating patterns and
prepares writing-data for the MCC/CP writing system which has been developed at the Mask Writing Equipment
Technology Research Laboratory. With this software, we have examined how EB proximity effect on CP writing affects
in reducing the shot count where CP shots with large CD errors have to be divided into VSB shots. In this paper we will
report on making common CP mask from a set of multiple actual device data by using these software, and will also
report on the results of CP writing and calculation of writing-TAT by MCC/CP writing system.
In May 2006, the Mask Design, Drawing, and Inspection Technology Research Department (Mask D2I) at the
Association of Super-Advanced Electronics Technologies (ASET) launched a 4-year program for reducing mask
manufacturing cost and TAT by concurrent optimization of MDP, mask writing, and mask inspection. As one of the
tasks being pursued at the Mask Design Data Technology Research Laboratory, we have evaluated the effect of reducing
the drawing shot counts by utilizing the repeating patterns, and showed positive impact on mask making by using CP
drawing. During the past four years, we have developed a software to extract repeating patterns from fractured OPCed
mask data which can be used to minimize the shot counts. In this evaluation, we have used an actual device production
data obtained from the member companies of MaskD2I. To the extraction software we added new functions for
extracting common repeating patterns from a set of multiple masks, and studied how this step can reduce the counts in
comparison to the shot counts required during the conventional mask writing techniques. We have also developed
software that uses the extraction result of repeating patterns and prepares drawing-data for the MCC/CP drawing system,
which has been developed at the Mask Writing Equipment Technology Research Laboratory. With this software, we
have simulated EB proximity effect on CP writing and examined how it affect the shot count reduction where CP shots with large CD errors are to be divided into VSB shots. In this paper, we will report the evaluation result of the practical application of repeating patterns in mask writing with this software.
In this communication, we report on our experimental results from the research focused on the application of
the electron beam direct writing in the nanometer range. Special care is taken to analyze the forward scattering spread
and its influence on the pattering fidelity for patterns with the dimensions in the sub-10nm region. We model, simulate
and discuss several different cases of the strategy used in the pattern writing. The sub-pixel address grid is used and the
energy beam distribution is analyzed with 1Å resolution. The pre-compensated energy distribution is analyzed from its
slope cross-sectional point of view. Additionally, the field factor correction (FFC) dose compensation, the correctness of
the built-in FFC compensation for the sub-10nm regime, and its influence on the writing speed is discussed. We map the
pre-compensated energy distribution used for the pattern exposure to the developed resist profile modeled by the spline
approximation of the experimentally acquired resist contrast curve. The newly established development process for the
hydrogen silsesquioxane (HSQ) resist has been tested and applied in its optimal way. Successful sub-10nm patterning
with the dimension controllability better than 5% of the critical dimension (CD) was achieved. The experimental setup
use JBX-9300FS (used @ 100keV) as the exposure tool, and the HSQ (XR-1541) as the resist. The energy intensity distribution (EID) function used for the proximity effects compensation is calculated by CHARIOT simulation engine.
KEYWORDS: Photomasks, Vestigial sideband modulation, Software development, Optical proximity correction, System on a chip, Inspection, Electronics, Manufacturing, Metals, Electron beams
In May 2006, the Mask Design, Drawing, and Inspection Technology Research Department (Mask D2I) at the
Association of Super-Advanced Electronics Technologies (ASET) launched 4-year program for reducing mask
manufacturing cost and TAT by concurrent optimization of MDP, mask writing, and mask inspection [1]. One area of
the project focuses on clever utilization of repeating patterns where the repeating patterns are extracted from the mask
data after the layout has been run through its OPC process. The data thus obtained is then used as Character Projection
(CP) for reducing the shot counts during the subsequent electron beam writing step. We have developed a software that
can extract repeated pattern from mask data. This software has been verified by using actual device production data
obtained from the member companies of MaskD2I. In this paper, we will address the effect of reducing the shot counts
on TAT in mask writing. In order to evaluate the usefulness of extraction repeating patterns, we will also show the result
of extraction common repeating patterns from multiple masks and the investigation result of EB proximity effect on CP
drawing.
KEYWORDS: Scattering, Lithography, Semiconducting wafers, Electron beam lithography, Point spread functions, Electron beam direct write lithography, Data conversion, Silicon, Molecules, Scanning electron microscopy
Electron Beam Direct Writing (EBDW) has been applied to various applications such as prototyping or small amount production of electronic devices. Originally, proximity effect in EBDW is considered as the problem of the background energy difference caused by the pattern density distribution. However, the critical dimensions of target patterns are getting smaller, we cannot ignore influences of the forward scattering. Theoretically, when the critical dimension is close to 3 or 4 times of forward scattering range, influence cannot be ignored. For example, in case of that corresponds, fabricating 20 nm dimension patterns by Nano Imprint Lithography (NIL) which is significant candidate of next generation lithography technology. Because it requires original dimension (1:1) mold. Therefore proximity effect correction (PEC) system which considers the forward scattering must be important.
We developed simulation-based proximity effect correction system combined with data format conversion, works on Linux PC cluster. And we exposed the patterns which are dose compensated by this system.
Firstly, we have speculated parameters about backward scattering parameters by exposing 100 nm line and space patterns. We got following parameters, beta (backward scattering range) = 32 um, eta (backward scattering coefficient) = 2.5.
Secondary, we have exposed Line and Space patterns whose dimensions are from 20 nm to 100 nm. We found that smaller and dense patterns have trend to be over exposed and bigger.
Experimental specification is following, EB Direct Writing system is JBX-9300FS (100keV acc. Voltage) by JEOL co.ltd, (Japan) , resist is HSQ (FOx 12) by Dow Corning co. (United States), substrate is Si.
KEYWORDS: Photomasks, System on a chip, Metals, Data conversion, Optical proximity correction, Inspection, Vestigial sideband modulation, Manufacturing, Electronics, Electron beams
In May 2006, the Mask Design, Drawing, and Inspection Technology Research Department (Mask D2I) at the
Association of Super-Advanced Electronics Technologies (ASET) launched 4-year program for reducing mask
manufacturing cost and TAT by concurrent optimization of MDP, mask writing, and mask inspection [1]. One area of
the project focuses on the extraction and utilization of repeating patterns. The repeating patterns are extracted from the
mask data after OPC. The information is then used in Character Projection (CP) for reducing the shot counts during the
electron beam writing. In this paper we will address the verification of the efficiency in extracting repeating pattern from
the actual device production data obtained from the member companies of MaskD2I, and will report on the improvement
of the software tool by these results.
As the feature size of LSI shrinks the cost of mask manufacturing and turn-around-time (TAT) continues to increase.
These increases are reaching to points of great concerns. Association of Super-Advanced Electronics Technologies
(ASET) Mask Design, Drawing, and Inspection Technology Research Department (Mask D2I) launched a 4-year
program for reducing mask manufacturing cost and TAT by concurrent optimization of MDP, mask writing, and mask
inspection that involves exploitation of close relationships and synergism among them. The task will be accomplished by
sharing four key avenues: a) common data format, b) clever use of repeating patterns, c) pattern prioritization based on
design intent, and d) parallel processing. Under the concurrent optimization scheme, mask pattern priorities that we call
as Mask Data Rank (MDR) are extracted from the design side, and repeating patterns are extracted from mask pattern
data. These are fed-forward to mask writing and mask inspection sides. In mask writing, MDR is employed to optimize
the writing conditions; and in Character Projection (CP) writing, repeating patterns are utilized for that purpose. In mask
inspection, MDR is used to optimize defect judgment conditions, and repeating patterns are utilized for efficient review.
For mask writing, we are developing a parallel e-beam writing system Multi Column Cell (MCC). Furthermore, we are
developing an integrated diagnostic system for e-beam mask writer, and a technology for defect judgment technology
based on defect printability in mask inspection. In this paper we describe details of our activity, its status, and some
recent results.
KEYWORDS: System on a chip, Optical proximity correction, Data conversion, Inspection, Metals, Manufacturing, Electronics, Vestigial sideband modulation, Parallel processing, Software development
As the feature size of LSI becomes smaller, the increase of mask manufacturing cost is becoming critical. Association of
Super-Advanced Electronics Technologies (ASET) started a 4-year project aiming at the reduction of mask
manufacturing cost and TAT by the optimization of MDP, mask writing, and mask inspection in 2006 under the
sponsorship of New Energy and Industrial Technology Development Organization (NEDO). In the project, the
optimization is being pursued from the viewpoints of "common data format", "pattern prioritization", "repeating
patterns", and "parallel processing" in MDP, mask writing, and mask inspection. In the total optimization, "repeating
patterns" are applied to the mask writing using character projection (CP) and efficient review in mask inspection. In this
paper, we describe a new method to find repeating patterns from OPCed layout data after fracturing. We found that using
the new method efficient extraction of repeating patterns even from OPCed layout data is possible and shot count of
mask writing decreases greatly.
As the feature size of LSI becomes smaller, the increase of mask manufacturing cost is becoming critical. Association of
Super-Advanced Electronics Technologies (ASET) started a 4-year project aiming at the reduction of mask
manufacturing cost and TAT by the optimization of MDP, mask writing, and mask inspection in 2006 under the
sponsorship of New Energy and Industrial Technology Development Organization (NEDO) [1]. In the project, the
optimization is being pursued from the viewpoints of "common data format", "pattern prioritization", "repeating
patterns", and "parallel processing" in MDP, mask writing, and mask inspection. In the total optimization, "repeating
patterns" are applied to the mask writing using character projection (CP) and efficient review in mask inspection. In this
paper, we describe a new method to find repeating patterns from OPCed layout data after fracturing. We found that using
the new method efficient extraction of repeating patterns even from OPCed layout data is possible and shot count of
mask writing decreases greatly.
KEYWORDS: Scattering, Parallel processing, Modulation, Energy efficiency, Computer simulations, Detection and tracking algorithms, Data modeling, Control systems, Electron beam direct write lithography, Computing systems
As pattern size becomes very small, it has been getting difficult to correct an EB proximity effect accurately. We have developed a new proximity effect correction which corrects dose by simulating the energy scattering. It can correct accurately in reasonable computing time. We will explain how to improve efficiency of energy deposit simulation and evaluate the algorithm in this paper.
KEYWORDS: Scattering, Data conversion, Data centers, Computer aided design, Data corrections, Solid modeling, Mirrors, Data compression, Control systems, Electron beam direct write lithography
As pattern size becomes very small, it has been getting difficult to correct an EB proximity effect accurately. We have developed a new proximity effect correction which corrects dose by simulating the pattern width. It can correct accurately a pattern of 100nm and below.
KEYWORDS: Data conversion, Photomasks, Charged-particle lithography, Computer aided design, Electron beam direct write lithography, Inspection, Distortion, Mirrors, Data processing, Data compression
We are developing a NGL data conversion system for EPL, for LEEPL, and for EBDW, which is based on our established photomask data conversion system, PATACON PC-cluster. For EPL data conversion, it has SF division, Complementary division, Stitching, Proximity effect correction, Alignment mark insertion, EB stepper control data creation, and Mask inspection data creation. For LEEPL data conversion, it has Pattern checking, Complementary division, Stitching, Stress distortion correction, Alignment mark insertion, and Mask inspection data creation. For EB direct-writing data conversion, it has Proximity effect correction and Extraction of aperture pattern for cell projection exposure.
KEYWORDS: Data conversion, Photomasks, Computer aided design, Charged-particle lithography, Inspection, Electron beam direct write lithography, Mirrors, Local area networks, Data corrections, Distortion
We are developing a NGL data conversion system for EPL, for LEEPL, and for EBDW, which is based on our established photomask data conversion system, PATACON PC-cluster. For EPL data conversion, it has SF division, Complementary division, Stitching, Proximity effect correction, Alignment mark insertion, EB stepper control data creation, and Mask inspection data creation. For LEEPL data conversion, it has Pattern checking, Complementary division, Stitching, Stress distortion correction, Alignment mark insertion, and Mask inspection data creation. For EB direct-writing data conversion, it has Proximity effect correction and Extraction of aperture pattern for cell projection exposure.
PATACON-LEEPL is a software product for converting semiconductor mask CAD data to the EB data of masks for LEEPL transcribing devices. This software has several functions, such as pattern placement function corresponding to the structure of the LEEPL mask, which is different from the mask for optical steppers, complementary division function for stencil masks, correction of distortion due to mask internal stress, and alignment mark insertion. This software operates in the environment in which several to some hundreds of Linux PC's are connected by a high-speed network.
KEYWORDS: Data conversion, Photomasks, Inspection, Computer aided design, Data corrections, Semiconducting wafers, Logic, Control systems, Semiconductors, Data compression
PATACON-EPL is a software product for converting semiconductor mask CAD data to the EB data of masks for EB steppers. This software has several functions, such as pattern placement corresponding to the structure of masks for EB steppers, complementary division for stencil masks, stitching for deforming the shape of a portion for connecting divided portions, proximity effect correction, machine control data generation, mask inspection data generation, and alignment mark insertion. This software operates in the environment in which several to some hundreds of Linux PC's are connected by a high-speed network.
PATACON-LEEPL is a software product for converting semiconductor mask CAD data to the EB data of masks for LEEPL transcribing devices. This software has several functions, such as pattern placement function corresponding to the structure of the LEEPL mask, which is different from the mask for optical steppers, complementary division function for stencil masks, correction of distortion due to mask internal stress, and alignment mark insertion. This software operates in the environment in which several to some hundreds of Linux PC's are connected by a high-speed network.
KEYWORDS: Data conversion, Photomasks, Inspection, Computer aided design, Data corrections, Semiconducting wafers, Semiconductors, Logic, Control systems, Data compression
PATACON-EPL is a software product for converting semiconductor mask CAD data to the EB data of masks for EB steppers. This software has several functions, such as pattern placement corresponding to the structure of masks for EB steppers, complementary division for stencil masks, stitching for deforming the shape of a portion for connecting divided portions, proximity effect correction, machine control data generation, mask inspection data generation, and alignment mark insertion. This software operates in the environment in which several to some hundreds of Linux PC's are connected by a high-speed network.
KEYWORDS: Data conversion, Photomasks, Charged-particle lithography, Computer aided design, Inspection, Image processing, Distortion, Data corrections, Optical alignment, Local area networks
PATACON-LEEPL is a software product for converting semiconductor mask CAD data to the EB data of masks for LEEPL transcribing devices. This software has several functions, such as pattern placement function corresponding to the structure of the LEEPL mask, which is different from the mask for optical steppers, complementary division function for stencil masks, correction of distortion due to mask internal stress, and alignment mark insertion. This software operates in the environment in which several to some hundreds of Linux PC's are connected by a high-speed network.
KEYWORDS: Data conversion, Photomasks, Inspection, Data corrections, Computer aided design, Semiconducting wafers, Semiconductors, Logic, Control systems, Data compression
PATACON-EPL is a software product for converting semiconductor mask CAD data to the EB data of masks for EB steppers. This software has several functions, such as pattern placement corresponding to the structure of masks for EB steppers, complementary division for stencil masks, stitching for deforming the shape of a portion for connecting divided portions, proximity effect correction, machine control data generation, mask inspection data generation, and alignment mark insertion. This software operates in the environment in which several to some hundreds of Linux PC's are connected by a high-speed network.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.